专利检索 ap:("Naval University of Engineering") AND inv:"Yongle Huang" 第 1 页

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发明授权
Insulated gate bipolar transistor physical model 有权

公开(公告)号：US11875869B2

公开(公告)日：2024-01-16

申请号：US17529230

申请日：2021-11-17

申请人： Naval University of Engineering

发明人： Yifei Luo , Fei Xiao , Binli Liu , Yongle Huang , Xin Li , Yingjie Jia , Jing Pu , Youxing Xiong

IPC分类号： G06F30/367 , H01L29/739 , G11C29/54 , G06F30/39 , G06F30/3308

CPC分类号： G11C29/54 , G06F30/3308 , G06F30/39 , H01L29/7393

摘要： An IGBT physical model parameter extraction method includes obtaining an initial value and a transformation range of an IGBT physical model parameter; and correcting a model parameter by means of a correspondence between IGBT dynamic and static features and the IGBT physical model parameter and in combination with an experiment measurement result of the IGBT physical model parameter.