公开(公告)号：US10211295B2

公开(公告)日：2019-02-19

申请号：US15614612

申请日：2017-06-06

Applicant: National Chi Nan University

Inventor： Jiann-Heng Chen ,  Puru Lin ,  Sun-Zen Chen

IPC: H01L33/30 ,  H01L29/04 ,  H01L29/20 ,  H01L41/318 ,  H01L21/02 ,  H01L29/739

Abstract: The present invention provides a substrate for a semiconductor device and a semiconductor device using the same. The substrate for a semiconductor device comprises a ceramic supporting base plate formed by a polycrystalline aluminum nitride (AlN) sintered body; at least one silicon oxide layer formed on the base plate by a sol-gel method wherein the at least one silicon oxide layer has an average roughness less than the base plate to block polycrystalline orientation of the base plate and has a total thickness in a range of 10˜5000 nm, the silicon oxide layer is only formed from the sol-gel method and is not single crystalline; a first buffer layer comprising aluminum nitride (AlN) on the at least one silicon oxide layer with a thickness of 0.1˜10 μm; and a gallium nitride layer formed on the first buffer layer and having a single-crystal crystalline structure.