Copper-Indium-Gallium-Chalcogenide Nanoparticle Precursors for Thin-Film Solar Cells
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    发明申请
    Copper-Indium-Gallium-Chalcogenide Nanoparticle Precursors for Thin-Film Solar Cells 有权
    用于薄膜太阳能电池的铜 - 铟 - 硫族化合物纳米粒子前体

    公开(公告)号:US20140249324A1

    公开(公告)日:2014-09-04

    申请号:US14195651

    申请日:2014-03-03

    IPC分类号: H01L31/032

    摘要: Nanoparticles containing IUPAC group 11 ions, group 13 ions and sulfur ions are synthesized by adding metal salts and an alkanethiol in an organic solvent and promoting the reaction by applying heat. Nanoparticles are formed at temperatures as low as 200° C. The nanoparticles may be thermally annealed for a certain amount of time at a temperature lower than the reaction temperature (usually ˜40° C. lower) to improve the topology and narrow the size distribution. After the reaction is complete, the nanoparticles may be isolated by the addition of a non-solvent and re-dispersed in organic solvents including toluene, chloroform and hexane to form a nanoparticle ink. Additives may be incorporated in the reaction solution to tailor the final ink viscosity.

    摘要翻译: 含有IUPAC 11族离子,13族离子和硫离子的纳米粒子通过在有机溶剂中加入金属盐和链烷硫醇并通过加热促进反应来合成。 纳米颗粒在低至200℃的温度下形成。纳米颗粒可以在低于反应温度(通常低于〜40℃)的温度下热退火一定时间,以改善拓扑结构并缩小尺寸分布 。 反应完成后,可以通过加入非溶剂分离纳米颗粒并重新分散在包括甲苯,氯仿和己烷在内的有机溶剂中以形成纳米颗粒油墨。 添加剂可以并入反应溶液中以适应最终的油墨粘度。