公开(公告)号：US10038081B1

公开(公告)日：2018-07-31

申请号：US15696387

申请日：2017-09-06

申请人： NXP USA, INC.

发明人： Douglas Michael Reber ,  Mehul Shroff

IPC分类号： H01L21/336 ,  H01L29/66 ,  H01L21/768

CPC分类号： H01L29/66795 ,  H01L21/76897 ,  H01L21/823431 ,  H01L23/485 ,  H01L27/0886 ,  H01L29/1087 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7851

摘要： In some embodiments, a substrate contact is formed by forming a first gate structure and a second gate structure. The first gate structure is formed in a first volume in a first area of the wafer and the second gate structure is formed in a second volume in a second area of the wafer. The gate dielectric is removed from the wafer in a first area of the wafer but remains in the second area. A first sidewall spacer formed for the gate structure and a second sidewall spacer is formed for the second gate structure. In some embodiments, the first gate structure can be utilized as a substrate contact and the second gate structure can be utilized as a gate of a transistor. In other embodiments, the first gate structure and the second gate structure can be removed and a metal gate material can be deposited in opening for forming a substrate contact and a metal gate, respectively. In some embodiments, the first gate structure (or the replacement metal gate structure) can be used as part of a body contact to bias the body of a transistor. In other embodiments, the first gate structure (or replacement metal gate structure) can be used as part of a current terminal contact for the transistor.