公开(公告)号：US20240204113A1

公开(公告)日：2024-06-20

申请号：US18082541

申请日：2022-12-15

Applicant: NXP B.V.

Inventor： Saumitra Raj Mehrotra ,  Xu Cheng

IPC: H01L29/866 ,  H01L29/66

CPC classification number: H01L29/866 ,  H01L29/66106

Abstract: Provided is a semiconductor device that includes: a semiconductor substrate having a first doped region of a first doping type and a second doped region of a second doping type, the first doped region being beneath but immediately adjacent to, the second doped region, with the first doping type being opposite the second doping type, thereby forming a junction region between the first doped region and the second doped region; and an additional layer that has been deposited above the junction region having similar mechanical properties as the semiconductor substrate. The additional layer covers at least 50% of a projection area of the junction region. The second doped region has a top surface, the additional layer has a bottom surface, and at least 90% of the bottom surface of the additional layer is electrically insulated from the top surface of the second doped region.