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    PATTERN FORMING METHOD USING RESIST UNDERLAYER FILM
    1.
    发明申请
    PATTERN FORMING METHOD USING RESIST UNDERLAYER FILM 有权
    使用电阻膜的图案形成方法

    公开(公告)号：US20160218013A1

    公开(公告)日：2016-07-28

    申请号：US14914160

    申请日：2014-08-27

    Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.

    Inventor： Tomoya OHASHI ,  Shigeo KIMURA ,  Yuki USUI ,  Hiroto OGATA

    IPC: H01L21/308 ,  H01L21/311 ,  H01L21/306 ,  H01L21/027

    CPC classification number: H01L21/3086 ,  C08F8/14 ,  C08F220/32 ,  G03F7/038 ,  G03F7/094 ,  G03F7/40 ,  H01L21/0273 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/31138 ,  H01L21/31144 ,  C08F220/26 ,  C08F220/14 ,  C08F220/18

    Abstract: A pattern forming method which uses a resist underlayer film having resistance to a basic aqueous hydrogen peroxide solution. A pattern forming method including: a first step of applying a resist underlayer film-forming composition containing a solvent and a polymer having a weight average molecular weight of 1,000 to 100,000 and an epoxy group on a semiconductor substrate that may have an inorganic film on the surface, followed by baking, to form a resist underlayer film; a second step of forming a resist pattern on the resist underlayer film; a third step of dry etching the resist underlayer film using the resist pattern as a mask to expose a surface of the inorganic film or the semiconductor substrate; and a forth step of wet etching the inorganic film or the semiconductor substrate using the dry-etched resist underlayer film as a mask and a basic aqueous hydrogen peroxide solution.

    Abstract translation: 使用对碱性过氧化氢水溶液具有耐性的抗蚀剂下层膜的图案形成方法。 一种图案形成方法，包括：第一步，在含有无机膜的半导体衬底上涂覆含有溶剂和重均分子量为1,000〜100,000的聚合物的抗蚀剂下层膜形成组合物和环氧基， 表面，然后烘烤，形成抗蚀剂下层膜; 在抗蚀剂下层膜上形成抗蚀剂图案的第二步骤; 使用抗蚀剂图案作为掩模来干蚀刻抗蚀剂下层膜以暴露无机膜或半导体衬底的表面的第三步骤; 以及使用干蚀刻抗蚀剂下层膜作为掩模和碱性过氧化氢水溶液湿法蚀刻无机膜或半导体衬底的第四步骤。

    RESIST UNDERLAYER FILM-FORMING COMPOSITION
    2.
    发明申请
    RESIST UNDERLAYER FILM-FORMING COMPOSITION 有权
    抗静电膜成膜组合物

    公开(公告)号：US20150337164A1

    公开(公告)日：2015-11-26

    申请号：US14655797

    申请日：2013-12-17

    Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.

    Inventor： Tomoya OHASHI ,  Shigeo KIMURA ,  Hiroto OGATA

    IPC: C09D167/04 ,  G03F7/11

    CPC classification number: C09D167/04 ,  C08G63/065 ,  C08J3/095 ,  C08J2367/04 ,  C08K5/0008 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11

    Abstract: There is provided a resist underlayer film-forming composition having excellent solubility in a solvent containing propylene glycol monomethyl ether as a main component. A resist underlayer film-forming composition comprising a polymer having a structural unit of Formula (1a) or Formula (1c) and a structural unit of Formula (1b) and a solvent containing more than 50% by mass of propylene glycol monomethyl ether, wherein in the polymer, the structural unit of Formula (1a) or Formula (1c) and the structural unit of Formula (1b) are arranged alternately. (In Formulae (1a) and (1b), Q is a phenylene group or a naphthylene group, m is 1 or 2, and each of n is independently 0 or 1.)

    Abstract translation: 提供了在含有丙二醇单甲醚作为主要成分的溶剂中具有优异溶解性的抗蚀剂下层膜形成组合物。 一种抗蚀剂下层膜形成组合物，其包含具有式（1a）或式（1c）的结构单元的聚合物和式（1b）的结构单元和含有大于50质量％的丙二醇单甲醚的溶剂，其中 在聚合物中，式（1a）或式（1c）的结构单元和式（1b）的结构单元交替排列。 （式（1a）和（1b）中，Q为亚苯基或亚萘基，m为1或2，n分别独立为0或1.）

    CATIONICALLY POLYMERIZABLE RESIST UNDERLAYER FILM-FORMING COMPOSITION
    4.
    发明申请
    CATIONICALLY POLYMERIZABLE RESIST UNDERLAYER FILM-FORMING COMPOSITION 审中-公开

    公开(公告)号：US20180081274A1

    公开(公告)日：2018-03-22

    申请号：US15563834

    申请日：2016-03-18

    Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.

    Inventor： Hiroto OGATA ,  Shigeo KIMURA ,  Yuki USUI ,  Tomoya OHASHI ,  Takahiro KISHIOKA

    IPC: G03F7/11 ,  C09D163/00

    CPC classification number: G03F7/11 ,  C08G59/20 ,  C09D163/00 ,  G03F7/091

    Abstract: There is provided a composition for forming a resist underlayer film for lithography that can be used as an underlayer anti-reflective coating that decreases the reflection of irradiated light during exposure from a semiconductor substrate toward the photoresist layer that is formed on the semiconductor substrate and in particular, can be suitably used as a flattening film for flattening a semiconductor substrate having a recess and a project by embedding, in a lithography process for production of a semiconductor device. A resist underlayer film-forming composition for lithography comprising (A) an alicyclic epoxy compound having an alicyclic skeleton and one or more epoxy groups, and a light absorption moiety, in the molecule, (B) a thermal acid generator, and (C) a solvent.

    RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING COPOLYMER THAT HAS TRIAZINE RING AND SULFUR ATOM IN MAIN CHAIN
    5.
    发明申请
    RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING COPOLYMER THAT HAS TRIAZINE RING AND SULFUR ATOM IN MAIN CHAIN 有权
    含有共轭聚合物的抗静电膜形成组合物在主链中具有TRIAZINE RING和SUFFUR ATOM

    公开(公告)号：US20170038687A1

    公开(公告)日：2017-02-09

    申请号：US15106861

    申请日：2014-12-10

    Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.

    Inventor： Hiroto OGATA ,  Takahiro KISHIOKA ,  Yoshiomi HIROI ,  Tomoya OHASHI ,  Yuki USUI

    IPC: G03F7/11 ,  C09D167/02 ,  C09D181/04

    CPC classification number: G03F7/11 ,  C08G63/6856 ,  C08G63/6886 ,  C09D167/02 ,  C09D167/025 ,  C09D181/04 ,  G03F7/091 ,  G03F7/094

    Abstract: A resist underlayer film-forming composition containing a copolymer having a structural unit of Formula (1) and a structural unit of Formula (2), a cross-linkable compound, a cross-linking catalyst, and a solvent. wherein A is a divalent organic group containing a triazine ring, X1 is an —S— group or an —O— group, Q is a linear, branched, or cyclic hydrocarbon group having a carbon atom number of 1 to 15, the hydrocarbon group may have at least one sulfur atom or oxygen atom in a main chain and at least one hydroxy group as a substituent, n is 0 or 1, R1 and R2 are each independently a C1-3 alkylene group or a single bond, Z is a divalent group having at least one sulfur atom or oxygen atom, and when X1 is an —O— group, Z is a divalent group having at least one sulfur atom.

    Abstract translation: 其中A为含有三嗪环的二价有机基团，X1为-S-基或-O-基团，Q为碳原子数为1〜15的直链，支链或环状烃基，烃基 可以在主链和至少一个羟基作为取代基具有至少一个硫原子或氧原子，n为0或1，R 1和R 2各自独立地为C 1-3亚烷基或单键，Z为 具有至少一个硫原子或氧原子的二价基团，当X 1为-O-基时，Z为具有至少一个硫原子的二价基团。

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