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公开(公告)号:US20240254606A1
公开(公告)日:2024-08-01
申请号:US18561557
申请日:2022-05-13
发明人: Hiroto UNNO , Atsushi YASHIRO , Hiroaki OHARA , Ayaka SAWADA , Naoki FUJIMOTO , Naoya SAWAKI
CPC分类号: C22C38/52 , C21D7/02 , C21D7/13 , C22C38/001 , C22C38/002 , C22C38/02 , C22C38/04 , C22C38/06 , C22C38/50
摘要: The present invention addresses the problem of reducing the cause of etching failure or pinholes as much as possible in an extremely thin ferrous alloy foil that has a thickness of 10-30 μm and that is applied to a metal mask used for increasing the precision of an electronic component. In order to solve the abovementioned problem, the present invention provides a ferrous alloy foil that has a composition containing at most 0.150% of C, at most 2.00% of Si, at most 10.00% of Mn 2.00-50.00% of Ni, at most 19.00% of Cr, at most 0.20% of N, at most 0.030% of Al, at most 5.00% of Co, at most 0.0005% of Mg, at most 0.0005% of Ca, at most 0.01% of Ti, at most 0.035% of P, and at most 0.0300% of S, with the balance consisting of Fe and impurities. The amount of Al2O3 is at most 30 mass % and the amount of MgO is at most 15 mass % with respect to the total mass of inclusions having a particle diameter of 2.00 μm or larger, and among the inclusions having a particle diameter of 2.00 μm or larger, the number ratio of inclusions having a particle diameter of no larger than 5.00 μm is 80.00% or higher.