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1.
公开(公告)号:US12198965B2
公开(公告)日:2025-01-14
申请号:US16822579
申请日:2020-03-18
Applicant: NGK INSULATORS, LTD.
Inventor: Kazuhiro Nobori , Takuji Kimura
IPC: H01L21/683 , B28B1/14 , B28B7/16 , B28B11/24 , C23C16/458 , H01J37/32 , H01L21/67
Abstract: A member for a semiconductor manufacturing apparatus includes a ceramic disc incorporating an electrode and a ceramic cylindrical shaft supporting the disc. The disc and the shaft are integrally formed and mutually have no bonding interface. The disc has a surface with which the shaft is integrated. The surface has a region inside the shaft and a region outside the shaft. The region inside the shaft is recessed by one step with respect to the region outside the shaft and has an electrode exposure hole through which the electrode is exposed.
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公开(公告)号:US11685077B2
公开(公告)日:2023-06-27
申请号:US17019745
申请日:2020-09-14
Applicant: NGK INSULATORS, LTD.
Inventor: Kazuhiro Nobori , Takuji Kimura
CPC classification number: B28B23/02 , B28B1/14 , B28B3/00 , B28B11/243 , H01J37/32724 , H01L21/67103 , H01L21/6831
Abstract: A method of manufacturing a wafer mounting table according to an embodiment includes: (a) a step of loading a ceramic slurry containing a ceramic powder and a gelling agent into opening portions of a metal mesh, inducing a chemical reaction of the gelling agent to gelate the ceramic slurry, and then performing degreasing and calcining to prepare a ceramic-loaded mesh; (b) a step of sandwiching the ceramic-loaded mesh between a first ceramic calcined body and a second ceramic calcined body obtained by calcining after mold cast forming so as to prepare a multilayer body; and (c) a step of hot press firing the multilayer body to prepare the wafer-receiving table.
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公开(公告)号:US12150219B2
公开(公告)日:2024-11-19
申请号:US17132381
申请日:2020-12-23
Applicant: NGK INSULATORS, LTD.
Inventor: Kazuhiro Nobori , Takuji Kimura , Tomohisa Mizoguchi
IPC: H05B3/28
Abstract: A ceramic heater includes a ceramic plate. An outer-peripheral-side resistance heating element is disposed in an outer peripheral zone of the ceramic plate. A wire line extends from each of a pair of terminals disposed in a central portion of the ceramic plate toward the outer peripheral zone, and a portion of the wire line close to the outer peripheral zone is a linear portion. A connection terminal is a conductive member connecting between the wire line and the outer-peripheral-side resistance heating element, and includes a first hole into which the linear portion of the wire line is inserted and a second hole into which an end portion of the outer-peripheral-side resistance heating element is inserted.
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公开(公告)号:US09533920B2
公开(公告)日:2017-01-03
申请号:US14208605
申请日:2014-03-13
Applicant: NGK Insulators, Ltd.
Inventor: Kazuhiro Nobori , Takuji Kimura , Hidemi Nakagawa
IPC: H05B3/10 , C04B35/645 , H01L21/67 , H01L21/683 , H05B3/14 , B32B18/00 , C04B35/111
CPC classification number: C04B35/645 , B32B18/00 , C04B35/111 , C04B2235/3206 , C04B2235/3217 , C04B2235/445 , C04B2235/5445 , C04B2235/6023 , C04B2235/606 , C04B2235/6567 , C04B2235/6581 , C04B2235/72 , C04B2237/08 , C04B2237/343 , C04B2237/36 , C04B2237/595 , C04B2237/68 , H01L21/67103 , H01L21/6831 , H05B3/143
Abstract: An electrostatic chuck 10 includes a disc-shaped alumina ceramic base 12, and a heater electrode 14 and an electrostatic electrode 16 that are embedded in the alumina ceramic base 12. An upper surface of the alumina ceramic base 12 functions as a wafer-receiving surface 12a. The heater electrode 14 is formed in a pattern shape, for example, in the manner of a single brush stroke so as to be arranged over the entire surface of the alumina ceramic base 12. When a voltage is applied to the heater electrode 14, the heater electrode 14 generates heat, and heats a wafer W. This heater electrode 14 contains TiSi2 as a main component.
Abstract translation: 静电吸盘10包括嵌入在氧化铝陶瓷基体12中的盘状氧化铝陶瓷基体12和加热电极14以及静电电极16.氧化铝陶瓷基体12的上表面作为晶片接受面 12a。 加热器电极14例如以单个笔刷行程的方式形成为图案形状,以布置在氧化铝陶瓷基底12的整个表面上。当向加热器电极14施加电压时, 加热电极14产生热量,并加热晶片W.该加热电极14含有TiSi 2作为主要成分。
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公开(公告)号:US10199245B2
公开(公告)日:2019-02-05
申请号:US13848776
申请日:2013-03-22
Applicant: NGK INSULATORS, LTD.
Inventor: Kazuhiro Nobori , Takuji Kimura , Reo Watanabe
IPC: H01L21/67 , H01L21/683
Abstract: The electrostatic chuck includes a discoidal alumina ceramic substrate and a heater electrode and an electrostatic electrode embedded in the alumina ceramic substrate. The top surface of the alumina ceramic substrate is a wafer-mounting face. The heater electrode has a pattern, for example, of a single continuous line so as to realize electric wiring over the entire surface of the alumina ceramic substrate. Upon the application of a voltage, the heater electrode generates heat and heats the wafer W. The heater electrode is made of a complex oxide of titanium, aluminum, and magnesium (Ti—Al—Mg—O) dispersed in molybdenum.
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6.
公开(公告)号:US20200312693A1
公开(公告)日:2020-10-01
申请号:US16822579
申请日:2020-03-18
Applicant: NGK INSULATORS, LTD.
Inventor: Kazuhiro Nobori , Takuji Kimura
Abstract: A member for a semiconductor manufacturing apparatus includes a ceramic disc incorporating an electrode and a ceramic cylindrical shaft supporting the disc. The disc and the shaft are integrally formed and mutually have no bonding interface. The disc has a surface with which the shaft is integrated. The surface has a region inside the shaft and a region outside the shaft. The region inside the shaft is recessed by one step with respect to the region outside the shaft and has an electrode exposure hole through which the electrode is exposed.
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公开(公告)号:US09630380B2
公开(公告)日:2017-04-25
申请号:US15079557
申请日:2016-03-24
Applicant: NGK INSULATORS, LTD.
Inventor: Kazuhiro Nobori , Takuji Kimura
IPC: C04B35/111 , B32B18/00 , C04B35/626 , C04B35/634 , C04B35/638 , C04B103/40
CPC classification number: B32B18/00 , C04B35/111 , C04B35/62625 , C04B35/62675 , C04B35/62685 , C04B35/634 , C04B35/638 , C04B2103/408 , C04B2235/3206 , C04B2235/3217 , C04B2235/445 , C04B2235/5445 , C04B2235/6023 , C04B2235/72 , C04B2235/77 , C04B2235/784 , C04B2235/786 , C04B2235/96 , C04B2237/343
Abstract: A method for manufacturing an alumina sintered body, according to the present invention, includes the steps of (a) obtaining a compact by putting a slurry containing an Al2O3 powder, a MgO powder, a MgF2 powder, a solvent, a dispersing agent, and a gelatinizer into a mold, gelatinizing the slurry by a chemical reaction of the gelatinizer in the mold, and causing mold release, (b) obtaining a calcined body by drying the compact, performing degreasing, and further performing calcination, and (c) obtaining a ceramic sintered body by subjecting the calcined body to hot-press firing at 1,150° C. to 1,350° C. In the step (a), the Al2O3 powder having a purity of 99.9 percent by mass or more is used and 0.1 to 0.2 parts by mass of MgO powder and 0.13 parts by mass or less of MgF2 powder relative to 100 parts by mass of Al2O3 powder are used.
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