公开(公告)号：US20010004116A1

公开(公告)日：2001-06-21

申请号：US09732844

申请日：2000-12-08

Applicant: NEC Corporation

Inventor： Shiro Tsunai

IPC: H01L021/00 ,  H01L021/339 ,  H01L027/148 ,  H01L029/768

CPC classification number: H01L27/14656 ,  H01L27/14603 ,  H01L27/14609

Abstract: P-type ion implantation is done in N well 15, so as to form a charge drain control layer 17 and form a photodiode N well 16 and OFD drain 5, the result being that, even if there is variation in the potential of the photodiode N well 16 making up the photodiode, because the variation in the potential of the charge drain control layer 17 is in the same direction as the potential of the photodiode N well 16, so that variation does not occur in the maximum amount of electrical charge that can be accumulated, the result being that there is no variation in the signal in the saturation condition.

Abstract translation: 在N阱15中进行P型离子注入，以便形成电荷漏极控制层17并形成光电二极管N阱16和OFD漏极5，其结果是即使光电二极管的电位发生变化 N阱16构成光电二极管，因为电荷漏极控制层17的电位变化与光电二极管N阱16的电位相同，所以最大电荷量不会发生变化 可以累积，结果是在饱和条件下信号没有变化。

公开(公告)号：US20030025950A1

公开(公告)日：2003-02-06

申请号：US10196240

申请日：2002-07-17

Applicant: NEC CORPORATION

Inventor： Shiro Tsunai

IPC: H04N001/46

CPC classification number: H04N1/486 ,  H04N1/0318 ,  H04N2201/03112 ,  H04N2201/03129 ,  H04N2201/03141 ,  H04N2201/03145 ,  H04N2201/03154 ,  H04N2201/03183

Abstract: A sensor chip arranged in a casing having a window portion on the side thereof to be faced to a medium to be read takes in the form of a single long chip. In particular, a single long and seamless sensor chip having a plurality of photoelectric conversion elements arranged thereon throughout a length of the window portion of the casing is mounted on a long supporting substrate having a length long enough to support the whole sensor chip. The sensor chip and the supporting substrate are bonded together such that transmission of stress due to external force exerted on the supporting substrate to the sensor chip is restricted.

Abstract translation: 布置在壳体中的传感器芯片具有在其一侧上具有窗口部分以面对待读取的介质的传感器芯片，其形式为单个长芯片。 特别地，具有多个光电转换元件的单个长且无缝的传感器芯片安装在整个壳体的窗口部分的整个长度上，其长度足够长以支撑整个传感器芯片。 传感器芯片和支撑基板被接合在一起，使得由于施加在支撑基板上的外力而产生的应力传递到传感器芯片受到限制。

公开(公告)号：US20020093059A1

公开(公告)日：2002-07-18

申请号：US10042161

申请日：2002-01-11

Applicant: NEC CORPORATION

Inventor： Shiro Tsunai

IPC: H01L023/62

CPC classification number: H01L27/0266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a protective circuit, on a semiconductor substrate of a first conduction type an island-shaped first well of a second conduction type for formation of a protective element for bypassing the above-noted static electricity and a second well of the second conduction type biased to a prescribed potential and intended for formation of a circuit element of the internal circuit are formed so as to be mutually separated, the first well and the second well being connected via a resistance. By this configuration, when static electricity is applied the potential of the first well changes in response thereto, and a current flowing from the first well into the second well is appropriately suppressed, thereby preventing destruction of the internal circuit by the static electricity.

Abstract translation: 在保护电路中，在第一导电类型的半导体衬底上，形成用于绕过上述静电的保护元件的第二导电类型的岛状第一阱和第二导电类型的第二阱被偏置到 形成用于形成内部电路的电路元件的规定电位以相互分离，第一阱和第二阱经由电阻连接。 通过这种结构，当施加静电时，第一阱的电位响应于其变化，并且适当地抑制从第一阱流入第二阱的电流，从而防止内部电路被静电破坏。

公开(公告)号：US20020024069A1

公开(公告)日：2002-02-28

申请号：US09942143

申请日：2001-08-29

Applicant: NEC Corporation

Inventor： Shiro Tsunai

IPC: H01L027/148 ,  H01L029/768

CPC classification number: H04N5/363

Abstract: A charge transfer device is provided which is capable of reducing a reset field-through noise in a stable manner without being affected by characteristics of transistors and without occurrence of a mustache-shaped pulse-like noise. The charge transfer device is made up of a floating diffusion region used to convert a signal charge transferred from a CCD (Charge Coupled Device) into a voltage, resetting unit used to eject the signal charge accumulated in the floating diffusion region in response to a reset pulse, a first stage source follower used to current-amplify the voltage and second stage source follower in which load is changed in response to the reset pulse and which is used to current-amplify an output voltage of the first stage source follower.

Abstract translation: 提供一种电荷转移装置，其能够以不稳定的方式降低复位通过噪声，而不受晶体管的特性的影响，并且不发生胡塞状脉冲状噪声。 电荷转移装置由用于将从CCD（电荷耦合器件）传送的信号电荷转换成用于响应于复位而弹出积累在浮动扩散区域中的信号电荷的电压复位单元的浮动扩散区域 脉冲，用于对电压进行电流放大的第一级源极跟随器，并且响应于复位脉冲改变负载并且用于对第一级源极跟随器的输出电压进行电流放大的第二级源极跟随器。