公开(公告)号：US10862455B2

公开(公告)日：2020-12-08

申请号：US15834206

申请日：2017-12-07

申请人： Murata Manufacturing Co., Ltd.

发明人： Tsutomu Takai ,  Atsushi Tanaka ,  Seiji Kai

IPC分类号： H03H9/02 ,  H03H9/25 ,  H03H9/05 ,  H03H9/145 ,  H01L41/047 ,  H03H9/64

摘要： An elastic wave device includes a piezoelectric thin film provided on a low acoustic velocity film and an IDT electrode provided on the piezoelectric thin film, wherein the piezoelectric thin film is made of a piezoelectric single crystal and includes a first principal surface that is a positive surface in a polarization axis direction and a second principal surface that is a negative surface in the polarization axis direction. The first principal surface of the piezoelectric thin film faces the low acoustic velocity film, and the second principal surface faces the IDT electrode.

公开(公告)号：US10659002B2

公开(公告)日：2020-05-19

申请号：US16108165

申请日：2018-08-22

申请人： Murata Manufacturing Co., Ltd.

发明人： Koji Yamamoto ,  Tsutomu Takai ,  Seiji Kai ,  Hisashi Yamazaki ,  Yuji Miwa ,  Takashi Yamane ,  Noriyoshi Ota ,  Atsushi Tanaka

IPC分类号： H03H9/02 ,  H03H9/10 ,  H03H9/05 ,  H03H9/64

摘要： An elastic wave device includes a lamination layer film including a piezoelectric thin film on a support substrate. The lamination layer film is not partially present in a region located in an outer side portion of a region where IDT electrodes are provided. A first insulation layer extends from at least a portion of a region where the lamination layer film is not present to an upper portion of the piezoelectric thin film. A wiring electrode has a width of about 6 μm and extends from the upper portion of the piezoelectric thin film to an upper portion of the first insulation layer, and extends onto a section of the first insulation layer in the region.

公开(公告)号：US09831416B2

公开(公告)日：2017-11-28

申请号：US14716974

申请日：2015-05-20

申请人： Murata Manufacturing Co., Ltd. ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

发明人： Keiichi Umeda ,  Atsushi Honda ,  Atsushi Tanaka ,  Masashi Omura ,  Morito Akiyama

IPC分类号： H01L41/187 ,  H01L41/18 ,  C23C14/34 ,  C30B23/02 ,  C30B29/40 ,  C23C14/06 ,  H01L41/316 ,  H03H9/02

CPC分类号： H01L41/18 ,  C23C14/0617 ,  C23C14/0641 ,  C23C14/34 ,  C30B23/025 ,  C30B29/403 ,  H01L41/187 ,  H01L41/316 ,  H03H9/02015 ,  H03H9/02574

摘要： A piezoelectric member that achieves a high sound speed includes a silicon-containing substrate and a piezoelectric layer. The piezoelectric layer is disposed on the silicon-containing substrate. At least a surface layer of the piezoelectric layer on a side opposite to the silicon-containing substrate is made of BxAl1-xN (0

公开(公告)号：US09948274B2

公开(公告)日：2018-04-17

申请号：US14541180

申请日：2014-11-14

申请人： Murata Manufacturing Co., Ltd.

发明人： Keiichi Umeda ,  Ryo Nakagawa ,  Atsushi Tanaka

IPC分类号： H01L41/047 ,  H03H9/02 ,  H01L41/16

CPC分类号： H03H9/02543 ,  H01L41/047 ,  H01L41/16 ,  H03H9/02574 ,  H03H9/0296

摘要： A surface acoustic wave device includes a high acoustic velocity film in which a transversal wave propagates at a higher acoustic velocity than in a ScAlN film laminated on a substrate made of silicon or glass. The ScAlN film is laminated on the high acoustic velocity film, and IDT electrodes are laminated on the ScAlN film.