公开(公告)号：US20040023429A1

公开(公告)日：2004-02-05

申请号：US10210315

申请日：2002-08-01

Applicant: Motorola Inc.

Inventor： Juergen A. Foerstner ,  Steven M. Smith ,  Raymond Mervin Roop

IPC: H01L021/00

CPC classification number: B81C1/0038 ,  B81B2201/018 ,  B81B2201/0292 ,  B81C1/00246 ,  B81C2201/0164 ,  B81C2203/0735 ,  H01G5/18

Abstract: A method is provided for making a MEMS structure (69). In accordance with the method, a CMOS substrate (51) is provided which has interconnect metal (53) deposited thereon. A MEMS structure is created on the substrate through the plasma assisted chemical vapor deposition (PACVD) of a material selected from the group consisting of silicon and silicon-germanium alloys. The low deposition temperatures attendant to the use of PACVD allow these materials to be used for MEMS fabrication at the back end of an integrated CMOS process.