公开(公告)号：US4963389A

公开(公告)日：1990-10-16

申请号：US294990

申请日：1989-01-06

申请人： Mitsuyuki Takada ,  Ryusaku Tsukao ,  Hayato Takasago

发明人： Mitsuyuki Takada ,  Ryusaku Tsukao ,  Hayato Takasago

IPC分类号： H01L21/48 ,  H01L21/70 ,  H01L27/01 ,  H05K1/16 ,  H05K3/18

CPC分类号： H01L21/702 ,  H01L21/4846 ,  H05K1/16

摘要： A method for producing a high density hybrid integrated circuit substrate capable of forming a very fine pattern of a conductor by means of the chemical plating and at the same time capable of applying the chemical plating, while protecting the resistor formed on the substrate in advance of the chemical plating step, the production method comprising steps of: forming a resistor on an electrically insulating substrate; forming an activating layer for depositing a chemical plating on the electrically insulating substrate in contact with the resistor; forming a stable resin layer, during the chemical plating step, by the photolithography process in a manner to cover the resistor, except for the portion of the activating layer where an electrically conductive layer is to be formed; and forming the electrically conductive layer by the chemical plating on the exposed portion of the activating layer.

摘要翻译： 一种用于制造高密度混合集成电路基板的方法，该方法能够通过化学镀形成导体的非常精细的图案，同时能够施加化学镀，同时保护在基板上形成的电阻器之前 所述化学镀步骤，所述制造方法包括以下步骤：在电绝缘基板上形成电阻器; 形成用于在与所述电阻器接触的所述电绝缘基板上沉积化学镀层的激活层; 在化学镀步骤期间通过光刻工艺以覆盖电阻器的方式形成稳定的树脂层，除了要形成导电层的激活层的部分之外; 以及通过化学镀在活化层的暴露部分上形成导电层。