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公开(公告)号：US20190356115A1
公开(公告)日：2019-11-21
申请号：US16347876
申请日：2017-11-30
发明人： Kyohei Yamakawa , Tomoya Hirata , Ryota Iriki , Takafumi Oka , Kenji Yoshikawa
摘要： The static charge eliminator includes a charger including one or more charging units, and a grounded needle-shaped conductor. The charger is configured to charge an insulating film such that the absolute value of the surface potential of the insulating film is 3 kV or more. The needle-shaped conductor is arranged to generate a corona discharge between the needle-shaped conductor and the insulating film charged by the charger. Thereby, the static charges on the insulating film can be reliably eliminated.
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公开(公告)号：US11139638B2
公开(公告)日：2021-10-05
申请号：US16347876
申请日：2017-11-30
发明人： Kyohei Yamakawa , Tomoya Hirata , Ryota Iriki , Takafumi Oka , Kenji Yoshikawa
摘要： The static charge eliminator includes a charger including one or more charging units, and a grounded needle-shaped conductor. The charger is configured to charge an insulating film such that the absolute value of the surface potential of the insulating film is 3 kV or more. The needle-shaped conductor is arranged to generate a corona discharge between the needle-shaped conductor and the insulating film charged by the charger. Thereby, the static charges on the insulating film can be reliably eliminated.
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公开(公告)号：US12074065B2
公开(公告)日：2024-08-27
申请号：US16960831
申请日：2018-03-29
CPC分类号： H01L21/78 , H01L33/0095 , H01S5/0202 , H01S5/04256
摘要： A semiconductor device production method includes providing a first electrode and a second electrode on a rear surface of a substrate where an active region emitting light is formed and providing a laminated object formed of a material less brittle than the substrate at part of a region between the first electrode and the second electrode so as to position directly below the active region; and exposing a plane on which the active region appears by cleavage of the substrate together with the laminated object in a state where the laminated object is located directly above the active region.
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公开(公告)号：US11244862B2
公开(公告)日：2022-02-08
申请号：US16500942
申请日：2018-04-10
IPC分类号： H01L21/78
摘要： A method for manufacturing semiconductor devices includes: forming a plurality of semiconductor devices in a first region of a primary surface of a wafer; forming a plurality of cleave initiation portions in a second region of a primary surface different from the first region; and cleaving the wafer sequentially, using the plurality of cleave initiation portions as initiation points, starting from a cleave initiation portion that is relatively difficult to cleave among the plurality of cleave initiation portions. Forming the plurality of cleave initiation portions includes forming the plurality of first grooves by etching portions of the second region. Due to this, the yield and the manufacturing efficiency for semiconductor devices can be enhanced.
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公开(公告)号：US10930559B2
公开(公告)日：2021-02-23
申请号：US16490040
申请日：2017-04-12
IPC分类号： H01L21/78
摘要： A method includes a step of forming a plurality of semiconductor devices having active regions, in a wafer, a step of forming a plurality of cleavage grooves on an upper surface side of the wafer, and a step of cleaving the wafer from the upper surface side of the wafer to expose steps formed by the plurality of cleavage grooves, and the plurality of active regions, on a sectional surface, wherein the active region is provided in a semicircle that has a radius that is a distance from a bottom of the cleavage groove to a lower surface of the wafer, and has a center that is on the lower surface of the wafer and is immediately below the cleavage groove in a cleavage propagation direction.
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