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    Plug-in unit, a housing and an electronic apparatus
    2.
    发明授权
    Plug-in unit, a housing and an electronic apparatus 有权
    插件单元，外壳和电子设备

    公开(公告)号：US06991471B2

    公开(公告)日：2006-01-31

    申请号：US10788915

    申请日：2004-02-27

    Applicant: Mitsuaki Hayashi ,  Akira Sawada ,  Kouichi Kuramitsu ,  Wataru Takano ,  Minoru Fujii ,  Hironori Tanaka

    Inventor： Mitsuaki Hayashi ,  Akira Sawada ,  Kouichi Kuramitsu ,  Wataru Takano ,  Minoru Fujii ,  Hironori Tanaka

    IPC: H01R12/00 ,  H05K1/00

    CPC classification number: G02B6/4452 ,  G02B6/3897 ,  G02B6/4292

    Abstract: An electronic apparatus has a plug-in unit and a housing that can increase a number of optical modules connected thereto. In the plug-in unit, a first connector is connectable to an optical module connected to an optical cable. A connector housing accommodates the first connector and has an insertion part into which the optical module is inserted. An attachment lever is used for fixing the plug-in unit to the housing in which the plug-in unit is accommodated. The first connector is located on a back side of the plug-in unit opposite to a front side where the attachment lever is located.

    Abstract translation: 电子设备具有插入单元和壳体，其可以增加与其连接的多个光学模块。 在插件单元中，第一连接器可连接到连接到光缆的光学模块。 连接器壳体容纳第一连接器并且具有插入部件，光学模块插入该插入部分。 使用连接杆将插入单元固定到容纳插入单元的壳体上。 第一连接器位于插入单元的背面，与安装杆所在的前侧相对。

    Plug-in unit, a housing and an electronic apparatus
    3.
    发明申请
    Plug-in unit, a housing and an electronic apparatus 有权
    插件单元，外壳和电子设备

    公开(公告)号：US20050074222A1

    公开(公告)日：2005-04-07

    申请号：US10788915

    申请日：2004-02-27

    Applicant: Mitsuaki Hayashi ,  Akira Sawada ,  Kouichi Kuramitsu ,  Wataru Takano ,  Minoru Fujii ,  Hironori Tanaka

    Inventor： Mitsuaki Hayashi ,  Akira Sawada ,  Kouichi Kuramitsu ,  Wataru Takano ,  Minoru Fujii ,  Hironori Tanaka

    IPC: G02B6/00 ,  G02B6/38 ,  G02B6/42 ,  H05K7/14

    CPC classification number: G02B6/4452 ,  G02B6/3897 ,  G02B6/4292

    Abstract: An electronic apparatus has a plug-in unit and a housing that can increase a number of optical modules connected thereto. In the plug-in unit, a first connector is connectable to an optical module connected to an optical cable. A connector housing accommodates the first connector and has an insertion part into which the optical module is inserted. An attachment lever is used for fixing the plug-in unit to the housing in which the plug-in unit is accommodated. The first connector is located on a back side of the plug-in unit opposite to a front side where the attachment lever is located.

    Abstract translation: 电子设备具有插入单元和壳体，其可以增加与其连接的多个光学模块。 在插件单元中，第一连接器可连接到连接到光缆的光学模块。 连接器壳体容纳第一连接器并且具有插入部件，光学模块插入该插入部分。 使用连接杆将插入单元固定到容纳插入单元的壳体上。 第一连接器位于插入单元的背面，与安装杆所在的前侧相对。

    Pressurized dispensers for dispensing products utilizing a pressure transfer fluid
    4.
    发明授权
    Pressurized dispensers for dispensing products utilizing a pressure transfer fluid 失效
    加压分配器，用于使用压力传递流体分配产品

    公开(公告)号：US4328843A

    公开(公告)日：1982-05-11

    申请号：US111267

    申请日：1980-01-11

    Applicant: Minoru Fujii

    Inventor： Minoru Fujii

    IPC: B05C17/03 ,  B65D83/00 ,  B65D83/14 ,  B65B3/04

    CPC classification number: B65D83/62 ,  B05C17/0316 ,  B65D2583/005 ,  Y02W30/807

    Abstract: Reusable pressurized containers are disclosed for dispensing fluids from the container without release of the pressurized propellant to the surrounding environment. The propellant is contained in a sealed, flexible compartment positioned within the container as a mixture of gas and liquid under pressure in equilibrium at the temperature of the container. A pressure transfer liquid, such as water, is used to liquefy the propellant in the compartment. The pressure transfer fluid also contacts the fluid or semi-solid to be dispensed and exerts pressure thereon to force the fluid to be dispensed out of the container. The liquefied propellant, as it vaporizes, maintains the pressure against the pressure transfer fluid essentially constant. The propellant in the flexible compartment is preferably a mixture of a liquefiable propellant gas or blend thereof and a nonliquefiable inert gas such as nitrogen or helium.

    Abstract translation: 公开了可重复使用的加压容器用于从容器分配流体，而不将加压的推进剂释放到周围环境。 推进剂被包含在位于容器内的密封的柔性隔室中，作为气体和液体的混合物，在容器的温度下处于平衡状态。 使用压力转移液体（如水）来液化隔室中的推进剂。 压力传递流体还接触要分配的流体或半固体，并在其上施加压力以迫使流体从容器中分配出来。 液化的推进剂在蒸发时保持压力传递流体的压力基本上恒定。 柔性隔室中的推进剂优选是可液化的推进剂气体或其混合物和非液化惰性气体如氮气或氦气的混合物。

    Apparatus on which fan can be mounted
    5.
    发明授权
    Apparatus on which fan can be mounted 有权
    可安装风扇的装置

    公开(公告)号：US08840453B2

    公开(公告)日：2014-09-23

    申请号：US13297512

    申请日：2011-11-16

    Applicant: Takaharu Izuno ,  Mitsuaki Hayashi ,  Kenji Joko ,  Osamu Saito ,  Minoru Fujii

    Inventor： Takaharu Izuno ,  Mitsuaki Hayashi ,  Kenji Joko ,  Osamu Saito ,  Minoru Fujii

    IPC: H05K5/00 ,  G06F1/20 ,  H05K7/20

    CPC classification number: H05K7/20727

    Abstract: An apparatus on which a fan can be mounted, including a casing; a plurality of cooling fan units arranged in line on a lower portion of the casing and capable of being inserted into and removed from the casing on an individual basis; and a plurality of plate members disposed above the line in which the cooling fan units are arranged and above a gap between the cooling fan units, the plate members extending in a direction to which an upper surface of each of the cooling fan units is substantially perpendicular and in which the cooling fan unit is inserted into and removed from the casing, wherein each of the plate members is supported so as to be able to pivot about its lower end portion toward both directions.

    Abstract translation: 一种可安装风扇的装置，包括壳体; 多个冷却风扇单元，其排列在所述壳体的下部并且能够单独地插入到所述壳体中并从壳体中移除; 以及多个板构件，其设置在所述冷却风扇单元布置在所述冷却风扇单元的上方的上方，并且位于所述冷却风扇单元之间的间隙之上，所述板构件沿着每个所述冷却风扇单元的上表面基本垂直的方向延伸 并且其中冷却风扇单元插入到壳体中并从壳体中移除，其中每个板构件被支撑成能够使其下端部朝向两个方向枢转。

    PLUG-IN UNIT
    6.
    发明申请
    PLUG-IN UNIT 有权
    插入式单元

    公开(公告)号：US20130003327A1

    公开(公告)日：2013-01-03

    申请号：US13449926

    申请日：2012-04-18

    Applicant: Osamu Saito ,  Hideaki Matsumoto ,  Mitsuaki Hayashi ,  Kenji Joko ,  Minoru Fujii ,  Takaharu Izuno

    Inventor： Osamu Saito ,  Hideaki Matsumoto ,  Mitsuaki Hayashi ,  Kenji Joko ,  Minoru Fujii ,  Takaharu Izuno

    IPC: H05K5/00

    CPC classification number: H05K7/1461

    Abstract: A plug-in unit includes: a printed circuit board on which a connector is mounted; and a cover in which the printed circuit board is accommodated; wherein the cover allows the connector to be exposed when the plug-in unit is inserted into a housing and to be covered when the plug-in unit is in a standalone state in which the plug-in unit is not inserted into the housing.

    Abstract translation: 插入单元包括：安装有连接器的印刷电路板; 以及容纳印刷电路板的盖子; 其中当所述插入单元插入到壳体中时，所述盖允许所述连接器暴露，并且当所述插入单元处于所述插入单元未插入所述壳体的独立状态时被覆盖。

    Semiconductor device having polysilicon electrode minimization resulting in a small resistance value
    7.
    发明授权
    Semiconductor device having polysilicon electrode minimization resulting in a small resistance value 失效
    具有多晶硅电极最小化的半导体器件导致小的电阻值

    公开(公告)号：US5726479A

    公开(公告)日：1998-03-10

    申请号：US584123

    申请日：1996-01-11

    Applicant: Michikazu Matsumoto ,  Minoru Fujii ,  Toshiki Yabu

    Inventor： Michikazu Matsumoto ,  Minoru Fujii ,  Toshiki Yabu

    IPC: H01L23/532 ,  H01L29/49 ,  H01L29/76 ,  H01L29/94

    CPC classification number: H01L29/4933 ,  H01L23/53271 ,  H01L2924/0002 ,  Y10S257/903

    Abstract: A polysilicon electrode is formed in an active area surrounded by an isolation on a silicon substrate with a gate oxide film sandwiched therebetween, a polysilicon wire is formed on the isolation, and a source/drain region is formed on both sides of the polysilicon electrode. On the both sides of a polysilicon film constituting the electrode and the wire are formed side walls having a height that is 4/5 or less of the height of the polysilicon film. Furthermore, the polysilicon film is provided with a silicide layer in contact with the top surface and portions of the side surfaces of the polysilicon film projecting from the side walls, and another silicide layer is formed in contact with the source/drain region. Since the sectional area of the silicide layer is increased, the resistance value can be suppressed even when the dimension of the polysilicon film is minimized. Thus, the invention provides a semiconductor device including an FET having a low resistance value applicable to a refined pattern.

    Abstract translation: 在由硅衬底上的隔离包围的有源区域中形成多晶硅电极，其间夹有栅极氧化膜，在隔离层上形成多晶硅导线，并在多晶硅电极的两侧形成源极/漏极区域。 在构成电极和导线的多晶硅膜的两侧形成高度为多晶硅膜的高度为+ E，fra 4/5 + EE以下的侧壁。 此外，多晶硅膜设置有与侧壁突出的顶表面和多晶硅膜的侧表面的部分接触的硅化物层，并且另外的硅化物层形成为与源极/漏极区域接触。 由于硅化物层的截面积增加，所以即使当多晶硅膜的尺寸最小化时也可以抑制电阻值。 因此，本发明提供一种包括具有适用于精细图案的低电阻值的FET的半导体器件。

    Method of manufacturing semiconductor device
    8.
    发明授权
    Method of manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US5500379A

    公开(公告)日：1996-03-19

    申请号：US265104

    申请日：1994-06-24

    Applicant: Yoshinori Odake ,  Teruhito Ohnishi ,  Minoru Fujii

    Inventor： Yoshinori Odake ,  Teruhito Ohnishi ,  Minoru Fujii

    IPC: H01L21/8238 ,  H01L21/265

    CPC classification number: H01L21/823807 ,  Y10S148/082

    Abstract: In a CMOS semiconductor device, low-dose ion implant of p-type impurity and n-type impurity is successively conducted to both n-MOSFET and p-MOSFET after formation of gate electrodes. Thereafter, when source/drain regions are formed at each MOSFET, p.sup.- regions function as local punch through stoppers in the n-MOSFET and n.sup.- regions function as the local punch through stoppers in the p-MOSFET. At this time, respective doses of n-type and p-type impurities are adjusted so that lowerings of threshold values of the channel regions are almost equal to each other. Thus, short channel effect is prevented, while reducing the step of forming two resist masks. With side walls, the CMOS semiconductor device with less short channel effect and high durability to hot carrier is manufactured without increase in the step of forming the resist masks.

    Abstract translation: 在CMOS半导体器件中，p型杂质和n型杂质的低剂量离子注入在形成栅电极之后依次传导到n-MOSFET和p-MOSFET两者。 此后，当在每个MOSFET处形成源极/漏极区域时，p-区域用作n-MOSFET中的阻挡器的局部冲击，并且n-区域用作p-MOSFET中的局部冲击穿过止动器。 此时，调整各种剂量的n型和p型杂质，使得沟道区的阈值的降低几乎相等。 因此，防止短沟道效应，同时减少形成两个抗蚀剂掩模的步骤。 利用侧壁，在不增加形成抗蚀剂掩模的步骤的情况下，制造具有较短沟道效应和对热载体的高耐久性的CMOS半导体器件。

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