公开(公告)号：US11948657B2

公开(公告)日：2024-04-02

申请号：US17547574

申请日：2021-12-10

Applicant: Micron Technology, Inc.

Inventor： Christopher G. Wieduwilt ,  Eric J. Schultz

IPC: G11C7/06 ,  G11C7/08 ,  G11C7/12 ,  H01L27/088 ,  G06F30/392

CPC classification number: G11C7/062 ,  G11C7/08 ,  G11C7/12 ,  H01L27/0886 ,  G06F30/392

Abstract: Sense amplifier layout designs and related apparatuses and methods. An apparatus includes a cross-coupled pair of pull-up transistors of a sense amplifier, a cross-coupled pair of pull-down transistors of the sense amplifier, and a pair of conductive lines electrically connecting the cross-coupled pair of pull-up transistors to the cross-coupled pair of pull-down transistors. The apparatus also includes a sense amplifier control transistors sharing a continuous active material with one of the cross-coupled pair of pull-up transistors or the cross-coupled pair of pull-down transistors. A method includes asserting a shared control gate terminal of sense amplifier control transistors sharing a continuous active material with the cross-coupled pair of pull-down transistors, applying a pre-charge voltage potential to the pair of conductive lines, electrically connecting memory cells to the pre-charged pair of bit lines, and amplifying electrical charges delivered to the pair of bit lines by the memory cells.

公开(公告)号：US20230186956A1

公开(公告)日：2023-06-15

申请号：US17547574

申请日：2021-12-10

Applicant: Micron Technology, Inc.

Inventor： Christopher G. Wieduwilt ,  Eric J. Schultz

IPC: G11C7/06 ,  G11C7/08 ,  G11C7/12 ,  H01L27/088

CPC classification number: G11C7/062 ,  G11C7/08 ,  G11C7/12 ,  H01L27/0886 ,  G06F30/392

Abstract: Sense amplifier layout designs and related apparatuses and methods. An apparatus includes a cross-coupled pair of pull-up transistors of a sense amplifier, a cross-coupled pair of pull-down transistors of the sense amplifier, and a pair of conductive lines electrically connecting the cross-coupled pair of pull-up transistors to the cross-coupled pair of pull-down transistors. The apparatus also includes a sense amplifier control transistors sharing a continuous active material with one of the cross-coupled pair of pull-up transistors or the cross-coupled pair of pull-down transistors. A method includes asserting a shared control gate terminal of sense amplifier control transistors sharing a continuous active material with the cross-coupled pair of pull-down transistors, applying a pre-charge voltage potential to the pair of conductive lines, electrically connecting memory cells to the pre-charged pair of bit lines, and amplifying electrical charges delivered to the pair of bit lines by the memory cells.