公开(公告)号：US20110066059A1

公开(公告)日：2011-03-17

申请号：US12881989

申请日：2010-09-14

申请人： Michael L. Lehrman ,  Shun-Yong Zinn ,  Michael D. Halleck

发明人： Michael L. Lehrman ,  Shun-Yong Zinn ,  Michael D. Halleck

IPC分类号： A61B5/08

CPC分类号： A61B5/4818 ,  A61B5/08 ,  A61B5/0816 ,  A61B5/6822 ,  A61B5/7203 ,  A61B5/725 ,  A61B5/7257 ,  A61B7/003 ,  A61B2562/02 ,  A61B2562/043

摘要： Systems and methods for detecting a general breathing event and for anticipating an onset of an obstructive sleep apnea (OSA) event. The method for detecting a general breathing event includes receiving a plurality of signals from at least one microphone. The method also includes determining a one-sided power spectral density from the received signals. The method further includes distinguishing each received signal as either a breath signal or a background noise signal. The method still further includes calculating a breath signature by processing each breath signal.

摘要翻译： 用于检测一般呼吸事件并预测阻塞性睡眠呼吸暂停（OSA）事件发作的系统和方法。 用于检测普通呼吸事件的方法包括从至少一个麦克风接收多个信号。 该方法还包括从接收到的信号确定单侧功率谱密度。 该方法还包括将每个接收到的信号区分为呼吸信号或背景噪声信号。 该方法还包括通过处理每个呼吸信号来计算呼吸签名。

公开(公告)号：US08740805B2

公开(公告)日：2014-06-03

申请号：US12881989

申请日：2010-09-14

申请人： Michael L. Lehrman ,  Shun-Yong Zinn ,  Michael D. Halleck

发明人： Michael L. Lehrman ,  Shun-Yong Zinn ,  Michael D. Halleck

IPC分类号： A61B5/08

CPC分类号： A61B5/4818 ,  A61B5/08 ,  A61B5/0816 ,  A61B5/6822 ,  A61B5/7203 ,  A61B5/725 ,  A61B5/7257 ,  A61B7/003 ,  A61B2562/02 ,  A61B2562/043

摘要： Systems and methods for detecting a general breathing event and for anticipating an onset of an obstructive sleep apnea (OSA) event. The method for detecting a general breathing event includes receiving a plurality of signals from at least one microphone. The method also includes determining a one-sided power spectral density from the received signals. The method further includes distinguishing each received signal as either a breath signal or a background noise signal. The method still further includes calculating a breath signature by processing each breath signal.

摘要翻译： 用于检测一般呼吸事件并预测阻塞性睡眠呼吸暂停（OSA）事件发作的系统和方法。 用于检测普通呼吸事件的方法包括从至少一个麦克风接收多个信号。 该方法还包括从接收到的信号确定单侧功率谱密度。 该方法还包括将每个接收到的信号区分为呼吸信号或背景噪声信号。 该方法还包括通过处理每个呼吸信号来计算呼吸签名。

公开(公告)号：US20050083518A1

公开(公告)日：2005-04-21

申请号：US10974950

申请日：2004-10-28

申请人： Won-Tai Ki ,  Seong-Woon Choi ,  Tae-Moon Jeong ,  Shun-Yong Zinn ,  Woo-Sung Han ,  Jung-Min Sohn

发明人： Won-Tai Ki ,  Seong-Woon Choi ,  Tae-Moon Jeong ,  Shun-Yong Zinn ,  Woo-Sung Han ,  Jung-Min Sohn

IPC分类号： G03F1/14 ,  G03F7/20 ,  G01N21/00

CPC分类号： G03F7/70591 ,  G03F1/44 ,  G03F1/70 ,  G03F7/70941

摘要： A mask for use in measuring flare produced by a projection lens of a photolithography system, a method of manufacturing the mask, a method of identifying a flare-affected region on a wafer, and a method for correcting for the flare to produce photoresist patterns of desired line widths are provided. A first photolithographic process is performed to form photoresist patterns on a test wafer using a mask including a light shielding region having a plurality of light transmission patterns and a light transmission region, and the photoresist patterns formed by light passing through the light transmission patterns of the light shielding region are compared to the photoresist patterns formed by light passing through the light transmission region. The amount of flare produced by the projection lens is quantified using the results of the comparison, and thus it is possible to identify a flare-affected region on the wafer. In addition, it is possible to form uniform photoresist patterns on the wafer by determining the open ratio of the flare-affected region and calculating an effective amount of the flare in the flare-affected region from the amount of flare of the lens and the open ratio. More specifically, a mask is produced in which the line widths of mask patterns are configured, i.e., corrected compared to the first mask, taking into consideration the effective amount of the flare.

摘要翻译： 用于测量由光刻系统的投影透镜产生的闪光的掩模，掩模的制造方法，识别晶片上的火炬区域的方法，以及用于校正光斑以产生光致抗蚀剂图案的方法 提供所需的线宽。 执行第一光刻工艺以使用包括具有多个透光图案和光透射区域的遮光区域的掩模在测试晶片上形成光致抗蚀剂图案，并且由穿过光传输图案的光形成的光致抗蚀剂图案 将光屏蔽区域与通过光透射区域的光形成的光致抗蚀剂图案进行比较。 使用比较结果来量化由投影透镜产生的闪光量，因此可以识别晶片上的闪光影响区域。 此外，可以通过确定闪光影响区域的开放比率并且从透镜的闪光量和开口的量来计算火炬影响区域中的闪光的有效量，从而在晶片上形成均匀的光致抗蚀剂图案 比。 更具体地，考虑到闪光灯的有效量，产生掩模图案的线宽被配置的掩模，即与第一掩模相比校正的掩模。

公开(公告)号：US07376543B2

公开(公告)日：2008-05-20

申请号：US10418220

申请日：2003-04-18

申请人： Shun-Yong Zinn

发明人： Shun-Yong Zinn

IPC分类号： G06G7/62

CPC分类号： G03F7/705 ,  G03F7/70091 ,  G03F7/70125

摘要： A simulation method designs an aperture to obtain optimum resolution and DOF in consideration of the layout of a circuit pattern of a photomask, and a recording medium in which the simulation method is recorded. The simulation method for designing an aperture in an exposure apparatus including a light source, an optical lens group, a photomask, an aperture, receives the layout information of the photomask. The aperture is divided into a plurality of pixels. The pixels of the aperture are flipped, a photolithography simulation is executed to produce a simulated photoresist pattern, and the shape of the aperture that provides an optimum resolution for the simulated photoresist pattern is searched for. Beneficially, a system is provided to execute the method. Also, beneficially, the simulation method may be stored on a storage medium.

摘要翻译： 考虑到光掩模的电路图案的布局以及其中记录了仿真方法的记录介质，仿真方法设计孔径以获得最佳分辨率和自由度。 用于设计包括光源，光学透镜组，光掩模，光圈的曝光装置中的光圈的模拟方法接收光掩模的布局信息。 孔径被分成多个像素。 旋转孔径的像素，执行光刻模拟以产生模拟的光致抗蚀剂图案，并且搜索为模拟的光致抗蚀剂图案提供最佳分辨率的孔的形状。 有益的是，提供了一种执行该方法的系统。 此外，有利的是，可以将模拟方法存储在存储介质上。

公开(公告)号：US06835507B2

公开(公告)日：2004-12-28

申请号：US10211359

申请日：2002-08-05

申请人： Won-Tai Ki ,  Seong-Woon Choi ,  Tae-Moon Jeong ,  Shun-Yong Zinn ,  Woo-Sung Han ,  Jung-Min Sohn

发明人： Won-Tai Ki ,  Seong-Woon Choi ,  Tae-Moon Jeong ,  Shun-Yong Zinn ,  Woo-Sung Han ,  Jung-Min Sohn

IPC分类号： G03F900

CPC分类号： G03F7/70591 ,  G03F1/44 ,  G03F1/70 ,  G03F7/70941

摘要： A mask for use in measuring flare produced by a projection lens of a photolithography system, a method of manufacturing the mask, a method of identifying a flare-affected region on a wafer, and a method for correcting for the flare to produce photoresist patterns of desired line widths are provided. A first photolithographic process is performed to form photoresist patterns on a test wafer using a mask including a light shielding region having a plurality of light transmission patterns and a light transmission region, and the photoresist patterns formed by light passing through the light transmission patterns of the light shielding region are compared to the photoresist patterns formed by light passing through the light transmission region. The amount of flare produced by the projection lens is quantified using the results of the comparison, and thus it is possible to identify a flare-affected region on the wafer. In addition, it is possible to form uniform photoresist patterns on the wafer by determining the open ratio of the flare-affected region and calculating an effective amount of the flare in the flare-affected region from the amount of flare of the lens and the open ratio. More specifically, a mask is produced in which the line widths of mask patterns are configured, i.e., corrected compared to the first mask, taking into consideration the effective amount of the flare.

摘要翻译： 用于测量由光刻系统的投影透镜产生的闪光的掩模，掩模的制造方法，识别晶片上的火炬区域的方法，以及用于校正光斑以产生光致抗蚀剂图案的方法 提供所需的线宽。 执行第一光刻工艺以使用包括具有多个透光图案和光透射区域的遮光区域的掩模在测试晶片上形成光致抗蚀剂图案，并且由穿过光传输图案的光形成的光致抗蚀剂图案 将光屏蔽区域与通过光透射区域的光形成的光致抗蚀剂图案进行比较。 使用比较结果来量化由投影透镜产生的闪光量，因此可以识别晶片上的闪光影响区域。 此外，可以通过确定闪光影响区域的开放比率并且从透镜的闪光量和开口的量来计算火炬影响区域中的闪光的有效量，从而在晶片上形成均匀的光致抗蚀剂图案 比。 更具体地，考虑到闪光灯的有效量，产生掩模图案的线宽被配置的掩模，即与第一掩模相比校正的掩模。

公开(公告)号：US07393615B2

公开(公告)日：2008-07-01

申请号：US10974950

申请日：2004-10-28

申请人： Won-Tai Ki ,  Seong-Woon Choi ,  Tae-Moon Jeong ,  Shun-Yong Zinn ,  Woo-Sung Han ,  Jung-Min Sohn

发明人： Won-Tai Ki ,  Seong-Woon Choi ,  Tae-Moon Jeong ,  Shun-Yong Zinn ,  Woo-Sung Han ,  Jung-Min Sohn

IPC分类号： G03F1/00 ,  G06F17/21

CPC分类号： G03F7/70591 ,  G03F1/44 ,  G03F1/70 ,  G03F7/70941

摘要： A mask for use in measuring flare produced by a projection lens of a photolithography system, a method of manufacturing the mask, a method of identifying a flare-affected region on a wafer, and a method for correcting for the flare to produce photoresist patterns of desired line widths are provided. A first photolithographic process is performed to form photoresist patterns on a test wafer using a mask including a light shielding region having a plurality of light transmission patterns and a light transmission region, and the photoresist patterns formed by light passing through the light transmission patterns of the light shielding region are compared to the photoresist patterns formed by light passing through the light transmission region. The amount of flare produced by the projection lens is quantified using the results of the comparison, and thus it is possible to identify a flare-affected region on the wafer. In addition, it is possible to form uniform photoresist patterns on the wafer by determining the open ratio of the flare-affected region and calculating an effective amount of the flare in the flare-affected region from the amount of flare of the lens and the open ratio. More specifically, a mask is produced in which the line widths of mask patterns are configured, i.e., corrected compared to the first mask, taking into consideration the effective amount of the flare.

摘要翻译： 用于测量由光刻系统的投影透镜产生的闪光的掩模，掩模的制造方法，识别晶片上的火炬区域的方法，以及用于校正光斑以产生光致抗蚀剂图案的方法 提供所需的线宽。 执行第一光刻工艺以使用包括具有多个透光图案和光透射区域的遮光区域的掩模在测试晶片上形成光致抗蚀剂图案，并且由穿过光传输图案的光形成的光致抗蚀剂图案 将光屏蔽区域与通过光透射区域的光形成的光致抗蚀剂图案进行比较。 使用比较结果来量化由投影透镜产生的闪光量，因此可以识别晶片上的闪光影响区域。 此外，可以通过确定闪光影响区域的开放比率并且从透镜的闪光量和开口的量来计算火炬影响区域中的闪光的有效量，从而在晶片上形成均匀的光致抗蚀剂图案 比。 更具体地，考虑到闪光灯的有效量，产生掩模图案的线宽被配置的掩模，即与第一掩模相比校正的掩模。