摘要:
This invention relates to a method for producing a photodetector based on the deposition of precursor system having a liquid phase. The photodetectors are characterized by a certain group of semiconductor materials which can be used as the absorber in solar-blind UV detectors. A facile route for the formation of thin layers of such absorber materials is disclosed.
摘要:
The invention relates to a process for the production of electrically semiconducting or conducting metal-oxide layers having improved conductivity which is suitable, in particular, for the production of flexible thin-film transistors, to metal-oxide layers produced thereby, and to the use thereof for the production of electronic components.
摘要:
The present invention relates inter alia to an electronic device, preferably a thin film transistor (TFT) comprising layers with n-type and p-type semi conducting materials, wherein the p-type layer comprises at least one organic hole transport material. Furthermore, the present invention relates to the use of the electronic device according to the invention in an electronic equipment selected from an RFID and backplanes for a display, electronic book and electronic paper, and an electronic equipment comprising an electronic device according to the invention.