Method for performing chip level electromagnetic interference reduction, and associated apparatus
    2.
    发明授权
    Method for performing chip level electromagnetic interference reduction, and associated apparatus 有权
    执行芯片级电磁干扰降低的方法及相关装置

    公开(公告)号:US09204581B2

    公开(公告)日:2015-12-01

    申请号:US13676098

    申请日:2012-11-14

    Applicant: MEDIATEK INC.

    CPC classification number: H05K9/0066

    Abstract: A method for performing chip level electromagnetic interference (EMI) reduction is provided, where the method is applied to an electronic device. The method includes: providing at least one EMI suppression circuit within at least one chip of the electronic device; and utilizing the at least one EMI suppression circuit within the at least one chip to perform EMI reduction on at least one signal within the at least one chip. In particular, the at least one chip includes a first chip and a second chip; and the at least one EMI suppression circuit includes a first EMI suppression circuit positioned within the first chip, and further includes a second EMI suppression circuit positioned within the second chip. An associated apparatus is also provided.

    Abstract translation: 提供了一种用于执行芯片级电磁干扰(EMI)减小的方法,其中该方法应用于电子设备。 该方法包括:在电子设备的至少一个芯片内提供至少一个EMI抑制电路; 以及利用所述至少一个芯片内的所述至少一个EMI抑制电路对所述至少一个芯片内的至少一个信号执行EMI降低。 特别地,至少一个芯片包括第一芯片和第二芯片; 并且所述至少一个EMI抑制电路包括位于所述第一芯片内的第一EMI抑制电路,并且还包括位于所述第二芯片内的第二EMI抑制电路。 还提供了一种相关联的装置。

    High-speed-transmission connection device having a metal protrusion electrically connected to a connector
    3.
    发明授权
    High-speed-transmission connection device having a metal protrusion electrically connected to a connector 有权
    具有电连接到连接器的金属突起的高速传输连接装置

    公开(公告)号:US09548573B2

    公开(公告)日:2017-01-17

    申请号:US14657041

    申请日:2015-03-13

    Applicant: MediaTek Inc.

    Inventor: Long-Kun Yu

    CPC classification number: H01R13/6583 H01R13/6584

    Abstract: A high-speed-transmission connection device includes a male connector, a cable, and a metal protrusion structure. The cable is connected to the male connector. The metal protrusion structure is formed on an outer surface of the male connector. When the male connector is connected to a female connector, the metal protrusion structure is in close contact with the inner surface of the female connector. The metal protrusion structure fills a gap between the male connector and the female connector, and prevents electromagnetic waves from leaking outwardly from the gap.

    Abstract translation: 高速传输连接装置包括阳连接器,电缆和金属突起结构。 电缆连接到公连接器。 金属突起结构形成在阳连接器的外表面上。 当阳连接器连接到阴连接器时,金属突出结构与阴连接器的内表面紧密接触。 金属突起结构填充阳连接器和阴连接器之间的间隙,并且防止电磁波从间隙向外泄漏。

    METHOD FOR PERFORMING CHIP LEVEL ELECTROMAGNETIC INTERFERENCE REDUCTION, AND ASSOCIATED APPARATUS
    4.
    发明申请
    METHOD FOR PERFORMING CHIP LEVEL ELECTROMAGNETIC INTERFERENCE REDUCTION, AND ASSOCIATED APPARATUS 有权
    执行芯片级电磁干扰减少的方法及相关设备

    公开(公告)号:US20130120958A1

    公开(公告)日:2013-05-16

    申请号:US13676098

    申请日:2012-11-14

    Applicant: MEDIATEK INC.

    CPC classification number: H05K9/0066

    Abstract: A method for performing chip level electromagnetic interference (EMI) reduction is provided, where the method is applied to an electronic device. The method includes: providing at least one EMI suppression circuit within at least one chip of the electronic device; and utilizing the at least one EMI suppression circuit within the at least one chip to perform EMI reduction on at least one signal within the at least one chip. In particular, the at least one chip includes a first chip and a second chip; and the at least one EMI suppression circuit includes a first EMI suppression circuit positioned within the first chip, and further includes a second EMI suppression circuit positioned within the second chip. An associated apparatus is also provided.

    Abstract translation: 提供了一种用于执行芯片级电磁干扰(EMI)减小的方法,其中该方法应用于电子设备。 该方法包括:在电子设备的至少一个芯片内提供至少一个EMI抑制电路; 以及利用所述至少一个芯片内的所述至少一个EMI抑制电路对所述至少一个芯片内的至少一个信号执行EMI降低。 特别地,至少一个芯片包括第一芯片和第二芯片; 并且所述至少一个EMI抑制电路包括位于所述第一芯片内的第一EMI抑制电路,并且还包括位于所述第二芯片内的第二EMI抑制电路。 还提供了一种相关联的装置。

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