公开(公告)号：US07690480B2

公开(公告)日：2010-04-06

申请号：US11562075

申请日：2006-11-21

申请人： Masahiko Mori ,  Akimasa Tanaka

发明人： Masahiko Mori ,  Akimasa Tanaka

IPC分类号： E04B1/82

CPC分类号： B60R13/083 ,  B32B5/26 ,  B32B7/02 ,  B32B7/12 ,  B32B2250/20 ,  B32B2262/0253 ,  B32B2262/0284 ,  B32B2262/08 ,  B32B2307/102 ,  B32B2307/718 ,  B32B2307/724 ,  B32B2605/003 ,  B32B2605/08

摘要： A soundproof material is provided with a first sound absorbing layer arranged on a vehicle panel, a second sound absorbing layer closer to an inner side of a passenger compartment, and an intermediate layer provided between the sound absorbing layers. The intermediate layer is constituted by two layers having a high-density layer and a low-density layer. The air permeability of the intermediate layer is set lower than the first sound absorbing layer and the second sound absorbing layer. The intermediate layer is arranged in such a manner that the high-density layer is adjacent to the second sound absorbing layer.

摘要翻译： 隔音材料设置有布置在车辆面板上的第一吸声层，更靠近乘客室内侧的第二吸声层和设置在吸声层之间的中间层。 中间层由具有高密度层和低密度层的两层构成。 中间层的透气度被设定为低于第一吸声层和第二吸音层。 中间层以高密度层与第二吸音层相邻的方式排列。

公开(公告)号：US20090291521A1

公开(公告)日：2009-11-26

申请号：US12453588

申请日：2009-05-15

申请人： Akimasa Tanaka

发明人： Akimasa Tanaka

IPC分类号： H01L31/18

CPC分类号： H01L27/14632 ,  H01L24/24 ,  H01L27/14618 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2224/18 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00

摘要： A semiconductor photodetector device (PD1) comprises a multilayer structure (LS1) and a glass substrate (1) optically transparent to incident light. The multilayer structure includes an etching stop layer (2), an n-type high-concentration carrier layer (3), an n-type light-absorbing layer (5), and an n-type cap layer (7) which are laminated. A photodetecting region (9) is formed near a first main face (101) of the multilayer structure, whereas a first electrode (21) is provided on the first main face. A second electrode (27) and a third electrode (31) are provided on a second main face (102). A film (10) covering the photodetecting region and first electrode is formed on the first main face. A glass substrate (1) is secured to the front face (10a) of this film.

摘要翻译： 半导体光检测器件（PD1）包括对入射光进行光学透明的多层结构（LS1）和玻璃基板（1）。 多层结构包括层压的蚀刻停止层（2），n型高浓度载体层（3），n型光吸收层（5）和n型覆盖层（7） 。 在多层结构的第一主面（101）附近形成光检测区域（9），而在第一主面上设置第一电极（21）。 第二电极（27）和第三电极（31）设置在第二主面（102）上。 覆盖光电检测区域和第一电极的膜（10）形成在第一主面上。 玻璃基板（1）固定在该薄膜的前表面（10a）上。

公开(公告)号：US07868408B2

公开(公告)日：2011-01-11

申请号：US10594619

申请日：2005-03-28

申请人： Akimasa Tanaka

发明人： Akimasa Tanaka

IPC分类号： H01L31/0352 ,  H01L31/0224 ,  H01L31/0232

CPC分类号： H01L27/14632 ,  H01L24/24 ,  H01L27/14618 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2224/18 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00

摘要： A semiconductor photodetector device (PD1) comprises a multilayer structure (LS1) and a glass substrate (1) optically transparent to incident light. The multilayer structure includes an etching stop layer (2), an n-type high-concentration carrier layer (3), an n-type light-absorbing layer (5), and an n-type cap layer (7) which are laminated. A photodetecting region (9) is formed near a first main face (101) of the multilayer structure, whereas a first electrode (21) is provided on the first main face. A second electrode (27) and a third electrode (31) are provided on a second main face (102). A film (10) covering the photodetecting region and first electrode is formed on the first main face. A glass substrate (1) is secured to the front face (10a) of this film.

摘要翻译： 半导体光检测器件（PD1）包括对入射光进行光学透明的多层结构（LS1）和玻璃基板（1）。 多层结构包括层压的蚀刻停止层（2），n型高浓度载体层（3），n型光吸收层（5）和n型覆盖层（7） 。 在多层结构的第一主面（101）附近形成光检测区域（9），而在第一主面上设置第一电极（21）。 第二电极（27）和第三电极（31）设置在第二主面（102）上。 覆盖光电检测区域和第一电极的膜（10）形成在第一主面上。 玻璃基板（1）固定在该薄膜的前表面（10a）上。

公开(公告)号：US20070241354A1

公开(公告)日：2007-10-18

申请号：US10585314

申请日：2004-12-27

申请人： Akimasa Tanaka

发明人： Akimasa Tanaka

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01S5/18305 ,  H01L33/20 ,  H01L2224/11 ,  H01S5/0207 ,  H01S5/0208 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/02248 ,  H01S5/02272 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/18308 ,  H01S5/18388 ,  H01S5/2063 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/423

摘要： A semiconductor light-emitting device comprises a multilayer structure and a glass substrate. The multilayer structure includes a plurality of laminated compound semiconductor layers and generates light. The multilayer structure has a light exit face for emitting the generated light, whereas the glass substrate optically transparent to the light is bonded to the light exit face by a film made of silicon oxide.

摘要翻译： 半导体发光器件包括多层结构和玻璃衬底。 多层结构包括多个层叠化合物半导体层并产生光。 多层结构具有用于发射所产生的光的光出射面，而对光进行光学透明化的玻璃基板通过由氧化硅构成的膜接合到光出射面。

公开(公告)号：US08048700B2

公开(公告)日：2011-11-01

申请号：US12654983

申请日：2010-01-12

申请人： Akimasa Tanaka

发明人： Akimasa Tanaka

IPC分类号： H01L21/84

CPC分类号： H01S5/18305 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/62 ,  H01L2224/13 ,  H01S5/0207 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/18308 ,  H01S5/18388 ,  H01S5/2063 ,  H01S5/423

摘要： A semiconductor light-emitting device (LE1) comprises a multilayer structure LS generating light. This multilayer structure includes a plurality of laminated compound semiconductor layers (3 to 8) and has first and second main faces (61, 62) opposing each other. A first electrode (21) and a second electrode (31) are arranged on the first and second main faces, respectively. A film made of silicon oxide (10) is also formed on the first main face so as to cover the first electrode. A glass substrate (1) optically transparent to the light generated by the multilayer structure is secured to the multilayer structure through the film made of silicon oxide.

摘要翻译： 半导体发光器件（LE1）包括产生光的多层结构LS。 该多层结构包括多个层叠化合物半导体层（3〜8），并且具有彼此相对的第一和第二主面（61,62）。 第一电极（21）和第二电极（31）分别布置在第一和第二主面上。 在第一主面上也形成由氧化硅（10）构成的膜，以覆盖第一电极。 通过由多层结构产生的光透明的玻璃基板（1）通过由氧化硅制成的膜固定到多层结构。

公开(公告)号：US20070284685A1

公开(公告)日：2007-12-13

申请号：US10581081

申请日：2004-11-30

申请人： Akimasa Tanaka

发明人： Akimasa Tanaka

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L31/0392 ,  G02B6/43 ,  H01L27/1464 ,  H01L31/02327 ,  H01L2224/13 ,  Y02E10/50

摘要： The present invention relates to a semiconductor photodetector and the like that can be made adequately compact while maintaining mechanical strength. The semiconductor photodetector includes a structural body of layers and a glass substrate. The structural body of layers is arranged from an antireflection film, a high-concentration carrier layer of an n-type (first conductive type), a light absorbing layer of the n-type, and a cap layer of the n-type that are laminated successively. The glass substrate is adhered via a silicon oxide film onto the antireflection film side of the structural body of layers. The glass substrate is optically transparent to incident light.

摘要翻译： 本发明涉及一种半导体光电检测器等，其可以在保持机械强度的同时可以制造得足够紧凑。 半导体光电检测器包括层的结构体和玻璃基板。 层的结构体由防反射膜，n型（第一导电型）的高浓度载体层，n型光吸收层和n型覆盖层构成， 连续层压。 玻璃基板通过氧化硅膜粘附到层的结构体的抗反射膜侧。 玻璃基板对入射光是光学透明的。

公开(公告)号：US07834413B2

公开(公告)日：2010-11-16

申请号：US10581081

申请日：2004-11-30

申请人： Akimasa Tanaka

发明人： Akimasa Tanaka

IPC分类号： H01L31/0224

CPC分类号： H01L31/0392 ,  G02B6/43 ,  H01L27/1464 ,  H01L31/02327 ,  H01L2224/13 ,  Y02E10/50

摘要： The present invention relates to a semiconductor photodetector and the like that can be made adequately compact while maintaining mechanical strength. The semiconductor photodetector includes a structural body of layers and a glass substrate. The structural body of layers is arranged from an antireflection film, a high-concentration carrier layer of an n-type (first conductive type), a light absorbing layer of the n-type, and a cap layer of the n-type that are laminated successively. The glass substrate is adhered via a silicon oxide film onto the antireflection film side of the structural body of layers. The glass substrate is optically transparent to incident light.

摘要翻译： 本发明涉及一种半导体光电检测器等，其可以在保持机械强度的同时可以制造得足够紧凑。 半导体光电检测器包括层的结构体和玻璃基板。 层的结构体由防反射膜，n型（第一导电型）的高浓度载体层，n型光吸收层和n型覆盖层构成， 连续层压。 玻璃基板通过氧化硅膜粘附到层的结构体的抗反射膜侧。 玻璃基板对入射光是光学透明的。

公开(公告)号：US07723742B2

公开(公告)日：2010-05-25

申请号：US11578251

申请日：2005-04-12

申请人： Akimasa Tanaka

发明人： Akimasa Tanaka

IPC分类号： H01L31/052

CPC分类号： H01S5/18305 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/62 ,  H01L2224/13 ,  H01S5/0207 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/18308 ,  H01S5/18388 ,  H01S5/2063 ,  H01S5/423

摘要： A semiconductor light-emitting device (LE1) comprises a multilayer structure LS generating light. This multilayer structure includes a plurality of laminated compound semiconductor layers (3 to 8) and has first and second main faces (61, 62) opposing each other. A first electrode (21) and a second electrode (31) are arranged on the first and second main faces, respectively. A film made of silicon oxide (10) is also formed on the first main face so as to cover the first electrode. A glass substrate (1) optically transparent to the light generated by the multilayer structure is secured to the multilayer structure through the film made of silicon oxide.

公开(公告)号：US20080006894A1

公开(公告)日：2008-01-10

申请号：US10594619

申请日：2005-03-28

申请人： Akimasa Tanaka

发明人： Akimasa Tanaka

IPC分类号： H01L31/101 ,  H01L31/18

CPC分类号： H01L27/14632 ,  H01L24/24 ,  H01L27/14618 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2224/18 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00

摘要： A semiconductor photodetector device (PD1) comprises a multilayer structure (LS1) and a glass substrate (1) optically transparent to incident light. The multilayer structure includes an etching stop layer (2), an n-type high-concentration carrier layer (3), an n-type light-absorbing layer (5), and an n-type cap layer (7) which are laminated. A photodetecting region (9) is formed near a first main face (101) of the multilayer structure, whereas a first electrode (21) is provided on the first main face. A second electrode (27) and a third electrode (31) are provided on a second main face (102). A film (10) covering the photodetecting region and first electrode is formed on the first main face. A glass substrate (1) is secured to the front face (10a) of this film.

摘要翻译： 半导体光检测器件（PD 1）包括多层结构（LS 1）和对入射光进行光学透明的玻璃基板（1）。 多层结构包括层压的蚀刻停止层（2），n型高浓度载体层（3），n型光吸收层（5）和n型覆盖层（7） 。 在多层结构的第一主面（101）附近形成光检测区域（9），而在第一主面上设置第一电极（21）。 第二电极（27）和第三电极（31）设置在第二主面（102）上。 覆盖光电检测区域和第一电极的膜（10）形成在第一主面上。 玻璃基板（1）固定在该薄膜的前表面（10a）上。

公开(公告)号：US07968429B2

公开(公告)日：2011-06-28

申请号：US12453588

申请日：2009-05-15

申请人： Akimasa Tanaka

发明人： Akimasa Tanaka

IPC分类号： H01L21/304

CPC分类号： H01L27/14632 ,  H01L24/24 ,  H01L27/14618 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2224/18 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00

摘要： A semiconductor photodetector device (PD1) comprises a multilayer structure (LS1) and a glass substrate (1) optically transparent to incident light. The multilayer structure includes an etching stop layer (2), an n-type high-concentration carrier layer (3), an n-type light-absorbing layer (5), and an n-type cap layer (7) which are laminated. A photodetecting region (9) is formed near a first main face (101) of the multilayer structure, whereas a first electrode (21) is provided on the first main face. A second electrode (27) and a third electrode (31) are provided on a second main face (102). A film (10) covering the photodetecting region and first electrode is formed on the first main face. A glass substrate (1) is secured to the front face (10a) of this film.

摘要翻译： 半导体光检测器件（PD1）包括对入射光进行光学透明的多层结构（LS1）和玻璃基板（1）。 多层结构包括层压的蚀刻停止层（2），n型高浓度载体层（3），n型光吸收层（5）和n型覆盖层（7） 。 在多层结构的第一主面（101）附近形成光检测区域（9），而在第一主面上设置第一电极（21）。 第二电极（27）和第三电极（31）设置在第二主面（102）上。 覆盖光电检测区域和第一电极的膜（10）形成在第一主面上。 玻璃基板（1）固定在该薄膜的前表面（10a）上。