公开(公告)号：US07982558B2

公开(公告)日：2011-07-19

申请号：US12306631

申请日：2007-06-14

Applicant: Marc Sworowski ,  David D. R. Chevrie ,  Pascal Philippe

Inventor： Marc Sworowski ,  David D. R. Chevrie ,  Pascal Philippe

IPC: H03H9/46 ,  H03H9/50 ,  H03H3/007 ,  H01L21/02

CPC classification number: B81C1/00198 ,  B81B2201/0292 ,  H03H3/0072

Abstract: Method of manufacturing a MEMS device integrated in a silicon substrate. In parallel to the manufacturing of the MEMS device passive components as trench capacitors with a high capacitance density can be processed. The method is especially suited for MEMS resonators with resonance frequencies in the range of 10 MHz.

Abstract translation: 制造集成在硅衬底中的MEMS器件的方法。 与MEMS器件的制造同时，可以处理具有高电容密度的沟槽电容器的无源部件。 该方法特别适用于谐振频率在10 MHz范围内的MEMS谐振器。

公开(公告)号：US20100230787A1

公开(公告)日：2010-09-16

申请号：US12299325

申请日：2007-04-30

Applicant: Lionel Guiraud ,  Francois Lecornec ,  Johan H. Klootwijk ,  Freddy Roozeboom ,  David D. R. Chevrie

Inventor： Lionel Guiraud ,  Francois Lecornec ,  Johan H. Klootwijk ,  Freddy Roozeboom ,  David D. R. Chevrie

IPC: H01L27/08

CPC classification number: H01L27/0805 ,  H01L27/10817 ,  H01L27/10829 ,  H01L27/10852 ,  H01L27/10861 ,  H01L28/40 ,  H01L28/82 ,  H01L28/90 ,  H01L29/6609 ,  H01L29/66181 ,  H01L29/861

Abstract: The invention relates to an electric device including an electric element, the electric element comprising a first electrode (104) having a first surface (106) and a pillar (108), the pillar extending from the first surface in a first direction (110), the pillar having a length measured from the first surface parallel to the first direction, the pillar having a cross section (116) perpendicular to the first direction and the pillar having a sidewall surface (120) enclosing the pillar and extending in the first direction, characterized in—that, the pillar comprises any one of a score (124) and protrusion (122) extending along at least part of the length of the pillar for giving the pillar (108) improved mechanical stability. The electrode allows electrical elements such as capacitors, energy storage devices or diodes to be made with improved properties in a cost effective way.

Abstract translation: 本发明涉及一种包括电气元件的电气设备，电气元件包括具有第一表面（106）和柱（108）的第一电极（104），该柱从第一表面沿第一方向（110）延伸， ，所述柱具有从所述第一表面平行于所述第一方向测量的长度，所述柱具有垂直于所述第一方向的横截面（116），所述柱具有封闭所述柱并且沿所述第一方向延伸的侧壁表面（120） 其特征在于，所述支柱包括沿柱的长度的至少一部分延伸的刻痕（124）和突起（122）中的任何一个，以提供支柱（108）改善的机械稳定性。 电极允许以成本有效的方式制造诸如电容器，储能装置或二极管的电气元件，具有改进的性能。

公开(公告)号：US08283750B2

公开(公告)日：2012-10-09

申请号：US12299325

申请日：2007-04-30

Applicant: Lionel Guiraud ,  Francois Lecornec ,  Johan H. Klootwijk ,  Freddy Roozeboom ,  David D. R. Chevrie

Inventor： Lionel Guiraud ,  Francois Lecornec ,  Johan H. Klootwijk ,  Freddy Roozeboom ,  David D. R. Chevrie

IPC: H01L29/00

CPC classification number: H01L27/0805 ,  H01L27/10817 ,  H01L27/10829 ,  H01L27/10852 ,  H01L27/10861 ,  H01L28/40 ,  H01L28/82 ,  H01L28/90 ,  H01L29/6609 ,  H01L29/66181 ,  H01L29/861

Abstract: The invention relates to an electric device including an electric element, the electric element comprising a first electrode (104) having a first surface (106) and a pillar (108), the pillar extending from the first surface in a first direction (110), the pillar having a length measured from the first surface parallel to the first direction, the pillar having a cross section (116) perpendicular to the first direction and the pillar having a sidewall surface (120) enclosing the pillar and extending in the first direction, characterized in—that, the pillar comprises any one of a score (124) and protrusion (122) extending along at least part of the length of the pillar for giving the pillar (108) improved mechanical stability. The electrode allows electrical elements such as capacitors, energy storage devices or diodes to be made with improved properties in a cost effective way.

Abstract translation: 本发明涉及一种包括电气元件的电气设备，电气元件包括具有第一表面（106）和柱（108）的第一电极（104），该柱从第一表面沿第一方向（110）延伸， ，所述柱具有从所述第一表面平行于所述第一方向测量的长度，所述柱具有垂直于所述第一方向的横截面（116），所述柱具有封闭所述柱并且沿所述第一方向延伸的侧壁表面（120） 其特征在于，所述支柱包括沿柱的长度的至少一部分延伸的刻痕（124）和突起（122）中的任何一个，以提供支柱（108）改善的机械稳定性。 电极允许以成本有效的方式制造诸如电容器，储能装置或二极管的电气元件，具有改进的性能。

公开(公告)号：US07786014B2

公开(公告)日：2010-08-31

申请号：US12442351

申请日：2007-09-14

Applicant: Francois Neuilly ,  David D. R. Chevrie ,  Dominique Yon

Inventor： Francois Neuilly ,  David D. R. Chevrie ,  Dominique Yon

IPC: H01L21/311

CPC classification number: H01L21/76898 ,  H01L23/481 ,  H01L2224/16225 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/3011 ,  H01L2224/0401

Abstract: The present invention provides a method for making a vertical interconnect through a substrate. The method makes use of a sacrificial buried layer 220 arranged in between the first side 202 and the second side 204 of a substrate 200. After having etched trenches 206 and 206′ from the first side, the sacrificial buried layer 220 functions as a stop layer during etching of holes 218 and 218′ from the second side, therewith protecting the trenches from damage during overetch of the holes. The etching of trenches is completely decoupled from etching of the holes providing several advantages for process choice and device manufacture. After removing part of the sacrificial buried layer to interconnect the trenches and the holes, the resulting vertical interconnect hole is filled to form a vertical interconnect.

Abstract translation: 本发明提供一种通过衬底制造垂直互连的方法。 该方法利用布置在基板200的第一侧202和第二侧204之间的牺牲掩埋层220.在从第一侧蚀刻了沟槽206和206'之后，牺牲掩埋层220用作停止层 在从第二侧蚀刻孔218和218'期间，从而在孔的过程中保护沟槽免受损坏。 沟槽的蚀刻与孔的蚀刻完全分离，为工艺选择和器件制造提供了几个优点。 在去除部分牺牲掩埋层以互连沟槽和孔之后，所得到的垂直互连孔被填充以形成垂直互连。

公开(公告)号：US20090269931A1

公开(公告)日：2009-10-29

申请号：US12442351

申请日：2007-09-14

Applicant: Francois Neuilly ,  David D. R. Chevrie ,  Dominique Yon

Inventor： Francois Neuilly ,  David D. R. Chevrie ,  Dominique Yon

IPC: H01L21/311

CPC classification number: H01L21/76898 ,  H01L23/481 ,  H01L2224/16225 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/3011 ,  H01L2224/0401

Abstract: The present invention provides a method for making a vertical interconnect through a substrate. The method makes use of a sacrificial buried layer 220 arranged in between the first side 202 and the second side 204 of a substrate 200. After having etched trenches 206 and 206′ from the first side, the sacrificial buried layer 220 functions as a stop layer during etching of holes 218 and 218′ from the second side, therewith protecting the trenches from damage during overetch of the holes. The etching of trenches is completely decoupled from etching of the holes providing several advantages for process choice and device manufacture. After removing part of the sacrificial buried layer to interconnect the trenches and the holes, the resulting vertical interconnect hole is filled to form a vertical interconnect.

Abstract translation: 本发明提供一种通过衬底制造垂直互连的方法。 该方法利用布置在基板200的第一侧202和第二侧204之间的牺牲掩埋层220.在从第一侧蚀刻了沟槽206和206'之后，牺牲掩埋层220用作停止层 在从第二侧蚀刻孔218和218'期间，从而在孔的过程中保护沟槽免受损坏。 沟槽的蚀刻与孔的蚀刻完全分离，为工艺选择和器件制造提供了几个优点。 在去除部分牺牲掩埋层以互连沟槽和孔之后，所得到的垂直互连孔被填充以形成垂直互连。