公开(公告)号：US20130299823A1

公开(公告)日：2013-11-14

申请号：US13941741

申请日：2013-07-15

Applicant: MagIC Technologies, Inc.

Inventor： Wei Cao ,  Witold Kula ,  Chyu-Jiuh Torng

IPC: H01L43/10

CPC classification number: H01L43/10 ,  B82Y40/00 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/12

Abstract: Reading margin is improved in a MTJ designed for MRAM applications by employing a pinned layer with an AP2/Ru/AP1 configuration wherein the AP1 layer is a CoFeB/CoFe composite and by forming a MgO tunnel barrier adjacent to the CoFe AP1 layer by a sequence that involves depositing and oxidizing a first Mg layer with a radical oxidation (ROX) process, depositing and oxidizing a second Mg layer with a ROX method, and depositing a third Mg layer on the oxidized second Mg layer. The third Mg layer becomes oxidized during a subsequent anneal. MTJ performance may be further improved by selecting a composite free layer having a Fe/NiFeHf or CoFe/Fe/NiFeHf configuration where the NiFeHf layer adjoins a capping layer in a bottom spin valve configuration. As a result, read margin is optimized simultaneously with improved MR ratio, a reduction in bit line switching current, and a lower number of shorted bits.

Abstract translation: 通过采用具有AP2 / Ru / AP1配置的钉扎层，其中AP1层是CoFeB / CoFe复合材料并且通过顺序形成与CoFe AP1层相邻的MgO隧道势垒，为MRAM应用设计的MTJ中的读取余量得到改善 其包括用自由基氧化（ROX）工艺沉积和氧化第一Mg层，用ROX法沉积和氧化第二Mg层，以及在氧化的第二Mg层上沉积第三Mg层。 在随后的退火中，第三Mg层变成氧化的。 通过选择具有Fe / NiFeHf或CoFe / Fe / NiFeHf构型的复合自由层，其中NiFeHf层与底部自旋阀结构中的覆盖层邻接，可以进一步改善MTJ性能。 结果，读取余量同时优化了MR比，降低了位线切换电流，并且更少的短路位数。

公开(公告)号：US20130154038A1

公开(公告)日：2013-06-20

申请号：US13764357

申请日：2013-02-11

Applicant: MagiC Technologies, Inc.

Inventor： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

IPC: H01L43/10

CPC classification number: H01L43/10 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

Abstract: A STT-RAM MTJ that minimizes spin-transfer magnetization switching current (Jc) is disclosed. The MTJ has a MgO tunnel barrier layer formed with a natural oxidation process to achieve a low RA (10 ohm-um2) and a Fe or Fe/CoFeB/Fe free layer which provides a lower intrinsic damping constant than a CoFeB free layer. A Fe, FeB, or Fe/CoFeB/Fe free layer when formed with a MgO tunnel barrier (radical oxidation process) and a CoFeB AP1 pinned layer in a MRAM MTJ stack annealed at 360° C. provides a high dR/R (TMR)>100% and a substantial improvement in read margin with a TMR/Rp_cov=20. High speed measurement of 100 nm×200 nm oval STT-RAM MTJs has shown a Jc0 for switching a Fe free layer is one half that for switching an amorphous Co40Fe40B20 free layer. A Fe/CoFeB/Fe free layer configuration allows the Hc value to be increased for STT-RAM applications.

Abstract translation: 公开了使自旋转移磁化开关电流（Jc）最小化的STT-RAM MTJ。 MTJ具有形成有自然氧化工艺的MgO隧道阻挡层，以实现低的RA（10欧姆 - um2）和不含CoFeB自由层的较低的固有阻尼常数的Fe或Fe / CoFeB / Fe自由层。 当在360℃退火的MRAM MTJ堆叠中形成具有MgO隧道势垒（自由基氧化法）和CoFeB AP1钉扎层的Fe，FeB或Fe / CoFeB / Fe自由层时，提供高dR / R（TMR ）> 100％，TMR / Rp_cov = 20时读取余量大幅度提高。 100 nm×200 nm椭圆STT-RAM MTJ的高速测量显示，用于切换无Fe层的Jc0是用于切换无定型Co40Fe40B20自由层的一半。 Fe / CoFeB / Fe自由层配置允许为STT-RAM应用增加Hc值。

公开(公告)号：US08736004B2

公开(公告)日：2014-05-27

申请号：US13941741

申请日：2013-07-15

Applicant: MagIC Technologies, Inc.

Inventor： Wei Cao ,  Witold Kula ,  Chyu-Jiuh Torng

IPC: H01L29/82 ,  H01L43/08 ,  G11C11/14 ,  G11C11/22 ,  G11C11/34

CPC classification number: H01L43/10 ,  B82Y40/00 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/12

Abstract: Reading margin is improved in a MTJ designed for MRAM applications by employing a pinned layer with an AP2/Ru/AP1 configuration wherein the AP1 layer is a CoFeB/CoFe composite and by forming a MgO tunnel barrier adjacent to the CoFe AP1 layer by a sequence that involves depositing and oxidizing a first Mg layer with a radical oxidation (ROX) process, depositing and oxidizing a second Mg layer with a ROX method, and depositing a third Mg layer on the oxidized second Mg layer. The third Mg layer becomes oxidized during a subsequent anneal. MTJ performance may be further improved by selecting a composite free layer having a Fe/NiFeHf or CoFe/Fe/NiFeHf configuration where the NiFeHf layer adjoins a capping layer in a bottom spin valve configuration. As a result, read margin is optimized simultaneously with improved MR ratio, a reduction in bit line switching current, and a lower number of shorted bits.

Abstract translation: 通过采用具有AP2 / Ru / AP1配置的钉扎层，其中AP1层是CoFeB / CoFe复合材料并且通过顺序形成与CoFe AP1层相邻的MgO隧道势垒，为MRAM应用设计的MTJ中的读取余量得到改善 其包括用自由基氧化（ROX）工艺沉积和氧化第一Mg层，用ROX法沉积和氧化第二Mg层，以及在氧化的第二Mg层上沉积第三Mg层。 在随后的退火中，第三Mg层变成氧化的。 通过选择具有Fe / NiFeHf或CoFe / Fe / NiFeHf构型的复合自由层，其中NiFeHf层与底部自旋阀结构中的覆盖层邻接，可以进一步改善MTJ性能。 结果，读取余量同时优化了MR比，降低了位线切换电流，并且更少的短路位数。