公开(公告)号：US20030015700A1

公开(公告)日：2003-01-23

申请号：US09908860

申请日：2001-07-20

Applicant: MOTOROLA, INC.

Inventor： Kurt W. Eisenbeiser ,  Thomas Freeburg ,  E. James Prendergast ,  William J. Ooms ,  Ravindranath Droopad ,  Jamal Ramdani

IPC: H01L029/04 ,  H01L031/036 ,  H01L031/0376

CPC classification number: H01L31/0693 ,  H01L21/02164 ,  H01L21/02197 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02488 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02551 ,  H01L21/31691 ,  H01L21/8221 ,  H01L23/66 ,  H01L31/0687 ,  H01L2924/0002 ,  Y02E10/544 ,  H01L2924/00

Abstract: Multijunction solar cell structures (100) including high quality epitaxial layers of monocrystalline semiconductor materials that are grown overlying monocrystalline substrates (102) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers are disclosed. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (104) on a silicon wafer. The accommodating buffer (104) layer is a layer of monocrystalline material spaced apart from the silicon wafer by an amorphous interface layer (112) of silicon oxide. The amorphous interface layer (112) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Multiple and varied accommodating buffer layers can be used to achieve the monolithic integration of multiple non-lattice matched solar cell junctions.

Abstract translation: 公开了包括通过形成用于生长单晶层的柔性衬底生长在单晶衬底（102）如大硅晶片上的单质半导体材料的高质量外延层的多结太阳能电池结构（100）。 实现顺应性衬底的形成的一种方法包括首先在硅晶片上生长容纳缓冲层（104）。 容纳缓冲器（104）层是通过氧化硅的非晶界面层（112）与硅晶片间隔开的单晶材料层。 非晶界面层（112）耗散应变并允许高质量单晶氧化物容纳缓冲层的生长。 可以使用多个不同的容纳缓冲层来实现多个非晶格匹配的太阳能电池接头的单片集成。

公开(公告)号：US20020167070A1

公开(公告)日：2002-11-14

申请号：US10184803

申请日：2002-07-01

Applicant: MOTOROLA, INC.

Inventor： E. James Prendergast

IPC: H01L029/12 ,  B32B009/04 ,  C30B001/00

CPC classification number: H01L21/02505 ,  H01L21/02164 ,  H01L21/02197 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02521 ,  H01L21/31691

Abstract: Islands of compound semiconductor material can be formed in silicon wafers by etching wells into the silicon wafer, growing an accommodating layer on the silicon wafer, and then growing a compound semiconductor layer on the accommodating layer. The accommodating layer may be a layer of monocrystalline oxide and an amorphous interface layer of silicon oxide separating the monocrystalline oxide from the silicon wafer. The layer or layers that make up the accommodating layer can be annealed to form a single amorphous layer. A template layer may be grown between the accommodating layer and the monocrystalline compound semiconductor layer. The various layers follow the contours of the wells in the silicon wafer. A polishing step removes the various layers except in the wells, leaving a flat silicon surface having islands of monocrystalline compound semiconductor material separated from the silicon by the accommodating layer, and by the template layer if present. Electronic components may be formed in the silicon and/or the monocrystalline compound semiconductor material.

Abstract translation: 化合物半导体材料岛可以通过将硅蚀刻到硅晶片中，在硅晶片上生长容纳层，然后在容纳层上生长化合物半导体层，从而在硅晶片中形成。 容纳层可以是从硅晶片分离单晶氧化物的单晶氧化物层和氧化硅的非晶界面层。 构成容纳层的层可以退火以形成单个非晶层。 可以在容纳层和单晶化合物半导体层之间生长模板层。 各层遵循硅晶片中的孔的轮廓。 抛光步骤去除了除了孔之外的各层，留下具有通过容纳层与硅分离的单晶化合物半导体材料岛的平坦硅表面，以及存在的模板层。 可以在硅和/或单晶化合物半导体材料中形成电子部件。