-
公开(公告)号：US20210121943A1
公开(公告)日：2021-04-29
申请号：US17132708
申请日：2020-12-23
发明人： Keisuke Tanaka , Daisuke Oya , Mikio Ishihara , Tatsuya Iwasa , Koji Saito , Yuki Wakabayashi
IPC分类号： B22C3/00 , B22D19/00 , B22D27/20 , H01L23/12 , B22D27/18 , H01L23/36 , H05K1/02 , H01L23/14 , H01L23/373
摘要： In a semiconductor-mounting heat dissipation base plate including: an insulating substrate to which a metal circuit layer for mounting a semiconductor chip thereon is fixed; a heat dissipation base formed from the same metal material as the metal circuit layer at a side opposite to the metal circuit layer across the insulating substrate and fixed to the insulating substrate similar to the metal circuit layer; and a strengthening member provided in the heat dissipation base so as to be separated from the insulating substrate, the sizes of crystal grains of a metal structure at a part of the heat dissipation base or the metal circuit layer are reduced by a crystal size reducing material adhered to a mold, thereby preventing an adverse effect of a columnar crystal structure.
-
公开(公告)号：US11484936B2
公开(公告)日：2022-11-01
申请号：US17132708
申请日：2020-12-23
发明人： Keisuke Tanaka , Daisuke Oya , Mikio Ishihara , Tatsuya Iwasa , Koji Saito , Yuki Wakabayashi
IPC分类号： B22C3/00 , B22D19/00 , B22D27/18 , B22D27/20 , H01L23/12 , H01L23/36 , H05K1/02 , H01L23/14 , H01L23/373
摘要： In a semiconductor-mounting heat dissipation base plate including: an insulating substrate to which a metal circuit layer for mounting a semiconductor chip thereon is fixed; a heat dissipation base formed from the same metal material as the metal circuit layer at a side opposite to the metal circuit layer across the insulating substrate and fixed to the insulating substrate similar to the metal circuit layer; and a strengthening member provided in the heat dissipation base so as to be separated from the insulating substrate, the sizes of crystal grains of a metal structure at a part of the heat dissipation base or the metal circuit layer are reduced by a crystal size reducing material adhered to a mold, thereby preventing an adverse effect of a columnar crystal structure.
-
公开(公告)号：US10898946B2
公开(公告)日：2021-01-26
申请号：US16080163
申请日：2017-05-29
发明人： Keisuke Tanaka , Daisuke Oya , Mikio Ishihara , Tatsuya Iwasa , Koji Saito , Yuki Wakabayashi
IPC分类号： B22C3/00 , B22D19/00 , H05K1/02 , B22D27/20 , H01L23/12 , B22D27/18 , H01L23/36 , H01L23/14 , H01L23/373
摘要： In a semiconductor-mounting heat dissipation base plate including: an insulating substrate to which a metal circuit layer for mounting a semiconductor chip thereon is fixed; a heat dissipation base formed from the same metal material as the metal circuit layer at a side opposite to the metal circuit layer across the insulating substrate and fixed to the insulating substrate similar to the metal circuit layer; and a strengthening member provided in the heat dissipation base so as to be separated from the insulating substrate, the sizes of crystal grains of a metal structure at a part of the heat dissipation base or the metal circuit layer are reduced by a crystal size reducing material adhered to a mold, thereby preventing an adverse effect of a columnar crystal structure.
-
公开(公告)号：US20190111467A1
公开(公告)日：2019-04-18
申请号：US16080163
申请日：2017-05-29
发明人： Keisuke Tanaka , Daisuke Oya , Mikio Ishihara , Tatsuya Iwasa , Koji Saito , Yuki Wakabayashi
摘要： In a semiconductor-mounting heat dissipation base plate including: an insulating substrate to which a metal circuit layer for mounting a semiconductor chip thereon is fixed; a heat dissipation base formed from the same metal material as the metal circuit layer at a side opposite to the metal circuit layer across the insulating substrate and fixed to the insulating substrate similar to the metal circuit layer; and a strengthening member provided in the heat dissipation base so as to be separated from the insulating substrate, the sizes of crystal grains of a metal structure at a part of the heat dissipation base or the metal circuit layer are reduced by a crystal size reducing material adhered to a mold, thereby preventing an adverse effect of a columnar crystal structure.
-
公开(公告)号：US09445497B2
公开(公告)日：2016-09-13
申请号：US14793256
申请日：2015-07-07
发明人： Daisuke Oya , Tatsuya Iwasa
CPC分类号： H05K1/0306 , H01L2224/0603 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2924/19107 , H05K1/0296 , H05K1/142 , H05K1/181 , H05K3/0067 , H05K2201/0919 , H05K2201/09845 , H01L2924/00014
摘要： A semiconductor device includes a first ceramic substrate, a second ceramic substrate, an inter-ceramic metal having an intermediate portion interposed between an upper surface of the first ceramic substrate and a lower surface of the second ceramic substrate, a first surmounting portion formed on an upper surface of the second ceramic substrate, a second surmounting portion formed on the upper surface of the second ceramic substrate, a first connection portion abutting on an outer edge of the second ceramic substrate and connecting the intermediate portion and the first surmounting portion, and a second connection portion abutting on an outer edge of the second ceramic substrate and connecting the intermediate portion and the second surmounting portion, a circuit pattern formed on the second ceramic substrate, and a semiconductor element provided on the circuit pattern.
摘要翻译： 半导体器件包括第一陶瓷衬底，第二陶瓷衬底，陶瓷间陶瓷金属，其中间部分介于第一陶瓷衬底的上表面和第二陶瓷衬底的下表面之间，第一超支撑部分形成在第一陶瓷衬底 第二陶瓷基板的上表面，形成在第二陶瓷基板的上表面上的第二超越部分，与第二陶瓷基板的外边缘抵接并连接中间部分和第一超越部分的第一连接部分， 第二连接部分邻接在第二陶瓷基板的外边缘上并连接中间部分和第二超越部分，形成在第二陶瓷基板上的电路图案和设置在电路图案上的半导体元件。
-
-
-
-
搜索结果
5 条记录 (耗时 0.014 秒)
