Light emitting device and phosphor

    公开(公告)号:US11680206B2

    公开(公告)日:2023-06-20

    申请号:US17677222

    申请日:2022-02-22

    Inventor: Byungchul Hong

    Abstract: An object of the present invention is to provide an infrared light-emitting phosphor which emits light in a wavelength range where the sensitivity of a detector is high by combination with a semiconductor light-emitting element that emits light in the visible light region, and to provide an infrared light-emitting device using the infrared light-emitting phosphor. The object can be achieved with a light-emitting device including a semiconductor light-emitting element that emits ultraviolet light or visible light and a phosphor that absorbs ultraviolet light or visible light emitted from the semiconductor light-emitting element and emits light in the infrared region, wherein an emission peak wavelength in the infrared region of the phosphor emitting in the infrared region is from 750 to 1,050 nm, and the half width of an emission peak waveform is more than 50 nm.

    Light emitting device and phosphor

    公开(公告)号:US11560516B2

    公开(公告)日:2023-01-24

    申请号:US16590604

    申请日:2019-10-02

    Inventor: Byungchul Hong

    Abstract: An object of the present invention is to provide an infrared light-emitting phosphor which emits light in a wavelength range where the sensitivity of a detector is high by combination with a semiconductor light-emitting element that emits light in the visible light region, and to provide an infrared light-emitting device using the infrared light-emitting phosphor. The object can be achieved with a light-emitting device including a semiconductor light-emitting element that emits ultraviolet light or visible light and a phosphor that absorbs ultraviolet light or visible light emitted from the semiconductor light-emitting element and emits light in the infrared region, wherein an emission peak wavelength in the infrared region of the phosphor emitting in the infrared region is from 750 to 1,050 nm, and the half width of an emission peak waveform is more than 50 nm.

    Phosphor and light-emitting device using same
    10.
    发明授权
    Phosphor and light-emitting device using same 有权
    荧光体和发光装置使用相同

    公开(公告)号:US09120974B2

    公开(公告)日:2015-09-01

    申请号:US13852481

    申请日:2013-03-28

    Abstract: Provided is a phosphor having enhanced luminance with respect to that of conventional β-type sialon phosphors. A phosphor having enhanced luminance is obtained by causing Al, O (oxygen) and Eu to be present at specific concentrations in a produced β-type sialon phosphor. Specifically, provided is a β-type sialon phosphor containing Si, Al, O, N and Eu, wherein the Al concentration in the phosphor ranges from 0.80 mass % or higher to 2.25 mass % or lower, the O concentration ranges from 0.36 mass % or higher to 1.15 mass % or lower, the Eu concentration ranges from 0.40 mass % or higher to 0.80 mass % or lower and a ratio (Al/O) of the Al concentration with respect to the O concentration ranges from 2.0 or higher to 3.0 or lower.

    Abstract translation: 提供了相对于常规的σ sialon荧光体而言具有增强亮度的荧光体。 通过使Al,O(氧)和Eu以特定浓度存在于所生产的型号的赛隆荧光粉中,获得具有增强的亮度的荧光体。 具体地说,提供了含有Si,Al,O,N,Eu的Si型AlGaN,其中,荧光体中的Al浓度为0.80质量%以上至2.25质量%以下,O浓度为0.36质量% %以上且1.15质量%以下,Eu浓度为0.40质量%以上至0.80质量%以下,Al浓度相对于O浓度的比(Al / O)为2.0以上〜 3.0以下。

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