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公开(公告)号：US20190122728A1
公开(公告)日：2019-04-25
申请号：US16227375
申请日：2018-12-20
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Jason Brand , Jason Snodgress
CPC classification number: G11C13/0004 , G11C7/04 , G11C13/00 , G11C13/0033 , G11C13/004 , G11C29/50 , G11C2029/5002
Abstract: A phase change memory array may include at least one cell used to determine whether the array has been altered by thermal exposure over time. The cell may be the same or different from the other cells. In some embodiments, the cell is only read in response to an event. If in response to that reading, it is determined that the cell has changed state or resistance, it may deduce whether the change is a result of thermal exposure. Corrective measures may then be taken.
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公开(公告)号：US10726912B2
公开(公告)日：2020-07-28
申请号：US16227375
申请日：2018-12-20
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Jason Brand , Jason Snodgress
Abstract: A phase change memory array may include at least one cell used to determine whether the array has been altered by thermal exposure over time. The cell may be the same or different from the other cells. In some embodiments, the cell is only read in response to an event. If in response to that reading, it is determined that the cell has changed state or resistance, it may deduce whether the change is a result of thermal exposure. Corrective measures may then be taken.
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公开(公告)号：US20180122465A1
公开(公告)日：2018-05-03
申请号：US15855712
申请日：2017-12-27
Applicant: Micron Technology, Inc.
Inventor： Jason Brand , Jason Snodgress
CPC classification number: G11C13/0004 , G11C7/04 , G11C13/00 , G11C13/0033 , G11C13/004 , G11C29/50 , G11C2029/5002
Abstract: A phase change memory array may include at least one cell used to determine whether the array has been altered by thermal exposure over time. The cell may be the same or different from the other cells. In some embodiments, the cell is only read in response to an event. If, in response to that reading, it is determined that the cell has changed state or resistance, it may deduce whether the change is a result of thermal exposure. Corrective measures may then be taken.
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Patent Agency Ranking
公开(公告)号：US10199097B2
公开(公告)日：2019-02-05
申请号：US15855671
申请日：2017-12-27
Applicant: Micron Technology, Inc.
Inventor： Jason Brand , Jason Snodgress
Abstract: A phase change memory array may include at least one cell used to determine whether the array has been altered by thermal exposure over time. The cell may be the same or different from the other cells. In some embodiments, the cell is only read in response to an event. If, in response to that reading, it is determined that the cell has changed state or resistance, it may deduce whether the change is a result of thermal exposure. Corrective measures may then be taken.
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公开(公告)号：US20180122464A1
公开(公告)日：2018-05-03
申请号：US15855671
申请日：2017-12-27
Applicant: Micron Technology, Inc.
Inventor： Jason Brand , Jason Snodgress
CPC classification number: G11C13/0004 , G11C7/04 , G11C13/00 , G11C13/0033 , G11C13/004 , G11C29/50 , G11C2029/5002
Abstract: A phase change memory array may include at least one cell used to determine whether the array has been altered by thermal exposure over time. The cell may be the same or different from the other cells. In some embodiments, the cell is only read in response to an event. If, in response to that reading, it is determined that the cell has changed state or resistance, it may deduce whether the change is a result of thermal exposure. Corrective measures may then be taken.
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公开(公告)号：US11056186B2
公开(公告)日：2021-07-06
申请号：US15855712
申请日：2017-12-27
Applicant: Micron Technology, Inc.
Inventor： Jason Brand , Jason Snodgress
Abstract: A phase change memory array may include at least one cell used to determine whether the array has been altered by thermal exposure over time. The cell may be the same or different from the other cells. In some embodiments, the cell is only read in response to an event. If, in response to that reading, it is determined that the cell has changed state or resistance, it may deduce whether the change is a result of thermal exposure. Corrective measures may then be taken.
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公开(公告)号：US09875794B2
公开(公告)日：2018-01-23
申请号：US13735791
申请日：2013-01-07
Applicant: Micron Technology, Inc.
Inventor： Jason Brand , Jason Snodgress
CPC classification number: G11C13/0004 , G11C7/04 , G11C13/00 , G11C13/0033 , G11C13/004 , G11C29/50 , G11C2029/5002
Abstract: A phase change memory array may include at least one cell used to determine whether the array has been altered by thermal exposure over time. The cell may be the same or different from the other cells. In some embodiments, the cell is only read in response to an event. If, in response to that reading, it is determined that the cell has changed state or resistance, it may deduce whether the change is a result of thermal exposure. Corrective measures may then be taken.
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8.发明申请APPARATUSES AND METHODS FOR SENSING A PHASE-CHANGE TEST CELL AND DETERMINING CHANGES TO THE TEST CELL RESISTANCE DUE TO THERMAL EXPOSURE 有权用于感测相变试验细胞的装置和方法，并确定由于热暴露导致的测试细胞电阻的变化公开(公告)号：US20130155767A1
公开(公告)日：2013-06-20
申请号：US13735791
申请日：2013-01-07
Applicant: Micron Technology, Inc.
Inventor： Jason Brand , Jason Snodgress
IPC: G11C13/00
CPC classification number: G11C13/0004 , G11C7/04 , G11C13/00 , G11C13/0033 , G11C13/004 , G11C29/50 , G11C2029/5002
Abstract: A phase change memory array may include at least one cell used to determine whether the array has been altered by thermal exposure over time. The cell may be the same or different from the other cells. In some embodiments, the cell is only read in response to an event. If, in response to that reading, it is determined that the cell has changed state or resistance, it may deduce whether the change is a result of thermal exposure. Corrective measures may then be taken.
Abstract translation: 相变存储器阵列可以包括用于确定阵列是否随时间被热暴露改变的至少一个单元。 细胞可以与其它细胞相同或不同。 在一些实施例中，仅响应于事件读取单元。 如果响应于该读数确定单元格已经改变状态或电阻，则可以推断出该变化是否是热暴露的结果。 然后可采取纠正措施。
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