公开(公告)号：US20230317598A1

公开(公告)日：2023-10-05

申请号：US18119805

申请日：2023-03-09

Applicant: MEDIATEK INC.

Inventor： Ang-Sheng Lin ,  Yen-Liang Yeh ,  Hao-Wei Huang

IPC: H01L23/522 ,  H01L23/66

CPC classification number: H01L23/5227 ,  H01L23/66 ,  H01L28/10 ,  H01L2223/6672

Abstract: A semiconductor device includes a metal layer, a ground plane formed on the metal layer, a first inductor formed on the metal layer, and a first isolation region formed on the metal layer and arranged to separate the first inductor from the ground plane. The first isolation region includes a first main area surrounding the first inductor, and at least one first slot extended from the first main area.