公开(公告)号：US12034072B2

公开(公告)日：2024-07-09

申请号：US17190559

申请日：2021-03-03

Applicant: MACOM Technology Solutions Holdings, Inc.

Inventor： Yueying Liu ,  Saptharishi Sriram ,  Scott Sheppard ,  Jennifer Gao

IPC: H01L23/528 ,  H01L23/522 ,  H01L27/085 ,  H01L29/06 ,  H01L29/423 ,  H01L29/778 ,  H03F3/193 ,  H03F3/195 ,  H03F3/21 ,  H03F3/42 ,  H01L29/20

CPC classification number: H01L29/7787 ,  H01L27/085 ,  H01L29/0696 ,  H01L29/42316 ,  H01L29/7786 ,  H03F3/193 ,  H03F3/195 ,  H03F3/21 ,  H03F3/211 ,  H03F3/423 ,  H01L29/2003 ,  H03F2200/366

Abstract: A semiconductor device includes a plurality of unit cell transistors on a common semiconductor structure, the unit cell transistors electrically connected in parallel, and each unit cell transistor including a respective gate finger. Respective threshold voltages of first and second of the unit cell transistors differ by at least 0.1 volts and/or threshold voltages of first and second segments of a third of the unit cell transistors differ by at least 0.1 volts.

公开(公告)号：US20240162304A1

公开(公告)日：2024-05-16

申请号：US18407695

申请日：2024-01-09

Applicant: MACOM Technology Solutions Holdings, Inc.

Inventor： Jeremy Fisher ,  Kyle Bothe ,  Terry Alcorn ,  Daniel Namishia ,  Jia Guo ,  Matthew King ,  Saptharishi Sriram ,  Fabian Radulescu ,  Scott Sheppard ,  Yueying Liu

IPC: H01L29/40 ,  H01L23/48 ,  H01L29/20 ,  H01L29/417 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L29/402 ,  H01L23/481 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/41758 ,  H01L29/66462 ,  H01L29/7786

Abstract: A transistor device may include a semiconductor structure including a channel layer and a barrier layer on the channel layer, wherein the barrier layer has a higher bandgap than the channel layer; a source contact and a drain contact on the barrier layer; a gate contact on the semiconductor structure between the source contact and the drain contact, the gate contact including a drain-side wing portion extending from a central portion of the gate contact; and a field plate on the semiconductor structure between the gate contact and the drain contact and laterally offset from the gate contact by a distance. The field plate may include a first wing portion extending from a central portion of the field plate.