公开(公告)号：US20230059953A1

公开(公告)日：2023-02-23

申请号：US17858776

申请日：2022-07-06

Applicant: Lintech Corporation

Inventor： Ho Jung YOU ,  Dong Nam Shin ,  Sei Kwang Oh ,  Jun Seok Lee ,  Sun Bin Yum ,  Tae-Woo Kang

IPC: C30B11/00 ,  C30B29/06 ,  C30B17/00 ,  C30B15/10 ,  C30B15/34

Abstract: The present invention relates to a method of manufacturing polycrystalline silicon ingot using a crucible in which an oxygen exhaust passage is formed by single crystal or polycrystalline rods, the method including the steps of: manufacturing the single crystal or polycrystalline silicon rods each having the shape of a quadrilateral pillar; putting the single crystal or polycrystalline quadrilateral pillar-shaped silicon rods into the crucible in such a manner as to be arranged close to one another along the inner peripheral surface of the crucible to thus form a space portion inside the single crystal or polycrystalline silicon rods, into which silicon chunks are put, and the oxygen exhaust passages between the inner peripheral surface of the crucible and the respective surfaces of the single crystal or polycrystalline silicon rods oriented toward the inner peripheral surface of the crucible; putting the silicon chunks into the space portion of the crucible; and melting and crystallizing the silicon chunks.

公开(公告)号：US11913133B2

公开(公告)日：2024-02-27

申请号：US17858776

申请日：2022-07-06

Applicant: Lintech Corporation

Inventor： Ho Jung You ,  Dong Nam Shin ,  Sei Kwang Oh ,  Jun Seok Lee ,  Sun Bin Yum ,  Tae-Woo Kang

IPC: C30B15/10 ,  C30B11/00 ,  C30B15/34 ,  C30B17/00 ,  C30B29/06

CPC classification number: C30B11/002 ,  C30B15/10 ,  C30B15/34 ,  C30B17/00 ,  C30B29/06

Abstract: The present invention relates to a method of manufacturing polycrystalline silicon ingot using a crucible in which an oxygen exhaust passage is formed by single crystal or polycrystalline rods, the method including the steps of: manufacturing the single crystal or polycrystalline silicon rods each having the shape of a quadrilateral pillar; putting the single crystal or polycrystalline quadrilateral pillar-shaped silicon rods into the crucible in such a manner as to be arranged close to one another along the inner peripheral surface of the crucible to thus form a space portion inside the single crystal or polycrystalline silicon rods, into which silicon chunks are put, and the oxygen exhaust passages between the inner peripheral surface of the crucible and the respective surfaces of the single crystal or polycrystalline silicon rods oriented toward the inner peripheral surface of the crucible; putting the silicon chunks into the space portion of the crucible; and melting and crystallizing the silicon chunks.