Deposition apparatus including edge plenum showerhead assembly

    公开(公告)号:US10253412B2

    公开(公告)日:2019-04-09

    申请号:US14720584

    申请日:2015-05-22

    摘要: A deposition apparatus for processing substrates includes a vacuum chamber including a processing zone in which a substrate may be processed. First and second gas sources are in fluid communication with the vacuum chamber. The first gas source is operable to supply a first gas into the vacuum chamber and the second gas source is operable to supply a second gas into the vacuum chamber. A showerhead assembly includes a face plate and back plate. The back plate includes a first gas inlet in fluid communication with the first gas source and a second gas inlet in fluid communication with the second gas source. The face plate includes a lower wall and an outer wall extending vertically upwardly from an outer periphery of the lower wall. The outer wall is sealed to an outer periphery of the back plate such that an inner plenum and an edge plenum are formed between the face plate and the back plate. The face plate includes a first gas permeable region in fluid communication with the first gas inlet via the inner plenum such that the first gas may be supplied therethrough during processing and a second gas permeable region in fluid communication with the second gas inlet via the edge plenum such that a second gas may be supplied therethrough during processing. A substrate pedestal assembly is configured to support a substrate on an upper surface thereof when a substrate is processed in the deposition apparatus.

    DEPOSITION APPARATUS INCLUDING EDGE PLENUM SHOWERHEAD ASSEMBLY
    2.
    发明申请
    DEPOSITION APPARATUS INCLUDING EDGE PLENUM SHOWERHEAD ASSEMBLY 审中-公开
    沉积装置,包括边缘淋浴器组件

    公开(公告)号:US20160340781A1

    公开(公告)日:2016-11-24

    申请号:US14720584

    申请日:2015-05-22

    IPC分类号: C23C16/455 C23C16/50

    摘要: A deposition apparatus for processing substrates includes a vacuum chamber including a processing zone in which a substrate may be processed. First and second gas sources are in fluid communication with the vacuum chamber. The first gas source is operable to supply a first gas into the vacuum chamber and the second gas source is operable to supply a second gas into the vacuum chamber. A showerhead assembly includes a face plate and back plate. The back plate includes a first gas inlet in fluid communication with the first gas source and a second gas inlet in fluid communication with the second gas source. The face plate includes a lower wall and an outer wall extending vertically upwardly from an outer periphery of the lower wall. The outer wall is sealed to an outer periphery of the back plate such that an inner plenum and an edge plenum are formed between the face plate and the back plate. The face plate includes a first gas permeable region in fluid communication with the first gas inlet via the inner plenum such that the first gas may be supplied therethrough during processing and a second gas permeable region in fluid communication with the second gas inlet via the edge plenum such that a second gas may be supplied therethrough during processing. A substrate pedestal assembly is configured to support a substrate on an upper surface thereof when a substrate is processed in the deposition apparatus.

    摘要翻译: 用于处理基板的沉积装置包括:真空室,其包括可以处理基板的处理区域。 第一和第二气体源与真空室流体连通。 第一气体源可操作以将第一气体供应到真空室中,并且第二气体源可操作以将第二气体供应到真空室中。 喷头组件包括面板和背板。 背板包括与第一气体源流体连通的第一气体入口和与第二气体源流体连通的第二气体入口。 面板包括从下壁的外周向上垂直向上延伸的下壁和外壁。 外壁被密封到背板的外周,使得在面板和背板之间形成内部增压室和边缘增压室。 面板包括第一气体可渗透区域,其经由内部增压室与第一气体入口流体连通,使得第一气体可以在处理期间通过其供应,并且第二气体可渗透区域经由边缘增压室与第二气体入口流体连通 使得在处理期间可以向其中供应第二气体。 衬底基座组件被配置为当在沉积设备中处理衬底时,在其上表面上支撑衬底。

    SHOWERHEAD TILT MECHANISM
    5.
    发明申请

    公开(公告)号:US20190032214A1

    公开(公告)日:2019-01-31

    申请号:US15658911

    申请日:2017-07-25

    摘要: A showerhead tilt adjustment mechanism is provided which supports a showerhead module in a top plate of a semiconductor substrate processing apparatus, the showerhead tilt adjustment mechanism including a differential screw which provides coarse and fine adjustments to adjust gap/tilt/planarization of a faceplate of the showerhead module with respect to an upper surface of a substrate pedestal module adjacent the faceplate in the semiconductor substrate processing apparatus.