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公开(公告)号:US10253412B2
公开(公告)日:2019-04-09
申请号:US14720584
申请日:2015-05-22
发明人: Timothy Scott Thomas , Karl Leeser
IPC分类号: C23C16/455 , C23C16/505 , C23C16/52 , C23C16/44
摘要: A deposition apparatus for processing substrates includes a vacuum chamber including a processing zone in which a substrate may be processed. First and second gas sources are in fluid communication with the vacuum chamber. The first gas source is operable to supply a first gas into the vacuum chamber and the second gas source is operable to supply a second gas into the vacuum chamber. A showerhead assembly includes a face plate and back plate. The back plate includes a first gas inlet in fluid communication with the first gas source and a second gas inlet in fluid communication with the second gas source. The face plate includes a lower wall and an outer wall extending vertically upwardly from an outer periphery of the lower wall. The outer wall is sealed to an outer periphery of the back plate such that an inner plenum and an edge plenum are formed between the face plate and the back plate. The face plate includes a first gas permeable region in fluid communication with the first gas inlet via the inner plenum such that the first gas may be supplied therethrough during processing and a second gas permeable region in fluid communication with the second gas inlet via the edge plenum such that a second gas may be supplied therethrough during processing. A substrate pedestal assembly is configured to support a substrate on an upper surface thereof when a substrate is processed in the deposition apparatus.
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公开(公告)号:US20160340781A1
公开(公告)日:2016-11-24
申请号:US14720584
申请日:2015-05-22
发明人: Timothy Scott Thomas , Karl Leeser
IPC分类号: C23C16/455 , C23C16/50
CPC分类号: C23C16/45565 , C23C16/4408 , C23C16/45519 , C23C16/505 , C23C16/52
摘要: A deposition apparatus for processing substrates includes a vacuum chamber including a processing zone in which a substrate may be processed. First and second gas sources are in fluid communication with the vacuum chamber. The first gas source is operable to supply a first gas into the vacuum chamber and the second gas source is operable to supply a second gas into the vacuum chamber. A showerhead assembly includes a face plate and back plate. The back plate includes a first gas inlet in fluid communication with the first gas source and a second gas inlet in fluid communication with the second gas source. The face plate includes a lower wall and an outer wall extending vertically upwardly from an outer periphery of the lower wall. The outer wall is sealed to an outer periphery of the back plate such that an inner plenum and an edge plenum are formed between the face plate and the back plate. The face plate includes a first gas permeable region in fluid communication with the first gas inlet via the inner plenum such that the first gas may be supplied therethrough during processing and a second gas permeable region in fluid communication with the second gas inlet via the edge plenum such that a second gas may be supplied therethrough during processing. A substrate pedestal assembly is configured to support a substrate on an upper surface thereof when a substrate is processed in the deposition apparatus.
摘要翻译: 用于处理基板的沉积装置包括:真空室,其包括可以处理基板的处理区域。 第一和第二气体源与真空室流体连通。 第一气体源可操作以将第一气体供应到真空室中,并且第二气体源可操作以将第二气体供应到真空室中。 喷头组件包括面板和背板。 背板包括与第一气体源流体连通的第一气体入口和与第二气体源流体连通的第二气体入口。 面板包括从下壁的外周向上垂直向上延伸的下壁和外壁。 外壁被密封到背板的外周,使得在面板和背板之间形成内部增压室和边缘增压室。 面板包括第一气体可渗透区域,其经由内部增压室与第一气体入口流体连通,使得第一气体可以在处理期间通过其供应,并且第二气体可渗透区域经由边缘增压室与第二气体入口流体连通 使得在处理期间可以向其中供应第二气体。 衬底基座组件被配置为当在沉积设备中处理衬底时,在其上表面上支撑衬底。
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公开(公告)号:US20220282377A1
公开(公告)日:2022-09-08
申请号:US17753083
申请日:2020-08-21
发明人: Bin Luo , Timothy Scott Thomas , Matthew B. Schick , John Michael Wiltse , Sean M. Donnelly , Michael John Selep
IPC分类号: C23C16/455
摘要: Showerheads for semiconductor processing equipment are disclosed that include various features designed to promote thermal control of the showerhead in high-temperature applications.
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公开(公告)号:US10760160B2
公开(公告)日:2020-09-01
申请号:US16257603
申请日:2019-01-25
发明人: Bin Luo , Timothy Scott Thomas , Damien Slevin , David Kamp
IPC分类号: H01L21/67 , C23C16/455 , C23C16/50 , C23C16/458 , C23C16/44 , C23C16/505 , H01L21/02
摘要: A showerhead tilt adjustment mechanism is provided which supports a showerhead module in a top plate of a semiconductor substrate processing apparatus, the showerhead tilt adjustment mechanism including a differential screw which provides coarse and fine adjustments to adjust gap/tilt/planarization of a faceplate of the showerhead module with respect to an upper surface of a substrate pedestal module adjacent the faceplate in the semiconductor substrate processing apparatus.
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公开(公告)号:US20190032214A1
公开(公告)日:2019-01-31
申请号:US15658911
申请日:2017-07-25
发明人: Bin Luo , Timothy Scott Thomas , Damien Slevin , Dave Kamp
IPC分类号: C23C16/455 , C23C16/458 , C23C16/50
摘要: A showerhead tilt adjustment mechanism is provided which supports a showerhead module in a top plate of a semiconductor substrate processing apparatus, the showerhead tilt adjustment mechanism including a differential screw which provides coarse and fine adjustments to adjust gap/tilt/planarization of a faceplate of the showerhead module with respect to an upper surface of a substrate pedestal module adjacent the faceplate in the semiconductor substrate processing apparatus.
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6.
公开(公告)号:US20240112890A1
公开(公告)日:2024-04-04
申请号:US18529576
申请日:2023-12-05
发明人: Michael John Selep , Patrick G. Breiling , Karl Frederick Leeser , Timothy Scott Thomas , David William Kamp , Sean M. Donnelly
IPC分类号: H01J37/32
CPC分类号: H01J37/3244
摘要: A faceplate of a showerhead has a bottom side that faces a plasma generation region and a top side that faces a plenum into which a process gas is supplied during operation of a substrate processing system. The faceplate includes apertures formed through the bottom side and openings formed through the top side. Each of the apertures is formed to extend through a portion of an overall thickness of the faceplate to intersect with at least one of the openings to form a corresponding flow path for process gas through the faceplate. Each of the apertures has a cross-section that has a hollow cathode discharge suppression dimension in at least one direction. Each of the openings has a cross-section that has a smallest cross-sectional dimension that is greater than the hollow cathode discharge suppression dimension.
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7.
公开(公告)号:US20210210310A1
公开(公告)日:2021-07-08
申请号:US17211256
申请日:2021-03-24
发明人: Michael John Selep , Patrick G. Breiling , Karl Frederick Leeser , Timothy Scott Thomas , David William Kamp , Sean M. Donnelly
IPC分类号: H01J37/32
摘要: A faceplate of a showerhead has a bottom side that faces a plasma generation region and a top side that faces a plenum into which a process gas is supplied during operation of a substrate processing system. The faceplate includes apertures formed through the bottom side and openings formed through the top side. Each of the apertures is formed to extend through a portion of an overall thickness of the faceplate to intersect with at least one of the openings to form a corresponding flow path for process gas through the faceplate. Each of the apertures has a cross-section that has a hollow cathode discharge suppression dimension in at least one direction. Each of the openings has a cross-section that has a smallest cross-sectional dimension that is greater than the hollow cathode discharge suppression dimension.
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8.
公开(公告)号:US10984987B2
公开(公告)日:2021-04-20
申请号:US16156918
申请日:2018-10-10
发明人: Michael John Selep , Patrick G. Breiling , Karl Frederick Leeser , Timothy Scott Thomas , David William Kamp , Sean M. Donnelly
IPC分类号: H01J37/32
摘要: A faceplate of a showerhead has a bottom side that faces a plasma generation region and a top side that faces a plenum into which a process gas is supplied during operation of a substrate processing system. The faceplate includes apertures formed through the bottom side and openings formed through the top side. Each of the apertures is formed to extend through a portion of an overall thickness of the faceplate to intersect with at least one of the openings to form a corresponding flow path for process gas through the faceplate. Each of the apertures has a cross-section that has a hollow cathode discharge suppression dimension in at least one direction. Each of the openings has a cross-section that has a smallest cross-sectional dimension that is greater than the hollow cathode discharge suppression dimension.
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9.
公开(公告)号:US11837443B2
公开(公告)日:2023-12-05
申请号:US18071260
申请日:2022-11-29
发明人: Michael John Selep , Patrick G. Breiling , Karl Frederick Leeser , Timothy Scott Thomas , David William Kamp , Sean M. Donnelly
IPC分类号: H01J37/32
CPC分类号: H01J37/3244
摘要: A faceplate of a showerhead has a bottom side that faces a plasma generation region and a top side that faces a plenum into which a process gas is supplied during operation of a substrate processing system. The faceplate includes apertures formed through the bottom side and openings formed through the top side. Each of the apertures is formed to extend through a portion of an overall thickness of the faceplate to intersect with at least one of the openings to form a corresponding flow path for process gas through the faceplate. Each of the apertures has a cross-section that has a hollow cathode discharge suppression dimension in at least one direction. Each of the openings has a cross-section that has a smallest cross-sectional dimension that is greater than the hollow cathode discharge suppression dimension.
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公开(公告)号:US11819970B2
公开(公告)日:2023-11-21
申请号:US15837707
申请日:2017-12-11
CPC分类号: B23Q5/04 , B25B13/06 , B25B13/5016 , F16D1/116 , F16D2300/10
摘要: A tool for driving a component with a knurling pattern around an outer surface of the component is provided. A shaft, with a first end, is in the form of at least a partial cylinder, where the at least partial cylinder has a first inner diameter that is less than an outer diameter of the knurling pattern. Serrations in the shaft have a pattern that matches the knurling pattern, which allow the serration in the shaft to engage with the knurling pattern so that when the shaft is rotated, the component is rotated.
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