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    System and method for detecting a process point in multi-mode pulse processes
    2.
    发明授权
    System and method for detecting a process point in multi-mode pulse processes 有权

    公开(公告)号：US10242849B2

    公开(公告)日：2019-03-26

    申请号：US15479597

    申请日：2017-04-05

    申请人： Lam Research Corporation

    发明人： Yassine Kabouzi ,  Jorge Luque ,  Andrew D. Bailey, III ,  Mehmet Derya Tetiker ,  Ramkumar Subramanian ,  Yoko Yamaguchi

    IPC分类号： H01L21/3065 ,  H01J37/32 ,  H01L21/67 ,  H01L21/66

    摘要： A system and method of identifying a selected process point in a multi-mode pulsing process includes applying a multi-mode pulsing process to a selected wafer in a plasma process chamber, the multi-mode pulsing process including multiple cycles, each one of the cycles including at least one of multiple, different phases. At least one process output variable is collected for a selected at least one of the phases, during multiple cycles for the selected wafer. An envelope and/or a template of the collected at least one process output variable can be used to identify the selected process point. A first trajectory for the collected process output variable of a previous phase can be compared to a second trajectory of the process output variable of the selected phase. A multivariate analysis statistic of the second trajectory can be calculated and used to identify the selected process point.

    Method of tungsten etching
    3.
    再颁专利
    Method of tungsten etching 有权

    公开(公告)号：USRE47650E1

    公开(公告)日：2019-10-15

    申请号：US15456185

    申请日：2017-03-10

    申请人： Lam Research Corporation

    发明人： Ramkumar Subramanian ,  Anne Le Gouil ,  Yoko Yamaguchi

    IPC分类号： H01L21/3065 ,  H01L21/3213 ,  H01L21/308 ,  C23F4/00

    摘要： A method for etching a tungsten containing layer in an etch chamber is provided. A substrate is placed with a tungsten containing layer in the etch chamber. A plurality of cycles is provided. Each cycle comprises a passivation phase for forming a passivation layer on sidewalls and bottoms of features in the tungsten containing layer. Additionally, each cycle comprises an etch phase for etching features in the tungsten containing layer.

    Method of tungsten etching
    4.
    发明授权
    Method of tungsten etching 有权
    钨蚀刻方法

    公开(公告)号：US09230825B2

    公开(公告)日：2016-01-05

    申请号：US13889282

    申请日：2013-05-07

    申请人： Lam Research Corporation

    发明人： Ramkumar Subramanian ,  Anne Le Gouil ,  Yoko Yamaguchi

    IPC分类号： H01L21/3065 ,  H01L21/3213 ,  C23F4/00 ,  H01L21/308

    CPC分类号： H01L21/32136 ,  C23F4/00 ,  H01L21/30655 ,  H01L21/3086

    摘要： A method for etching a tungsten containing layer in an etch chamber is provided. A substrate is placed with a tungsten containing layer in the etch chamber. A plurality of cycles is provided. Each cycle comprises a passivation phase for forming a passivation layer on sidewalls and bottoms of features in the tungsten containing layer. Additionally, each cycle comprises an etch phase for etching features in the tungsten containing layer.

    摘要翻译： 提供了一种在蚀刻室中蚀刻含钨层的方法。 在蚀刻室中放置具有含钨层的衬底。 提供多个循环。 每个循环包括用于在含钨层的侧壁和特征底部上形成钝化层的钝化阶段。 另外，每个循环包括用于蚀刻含钨层中的特征的蚀刻阶段。

    System and Method for Detecting a Process Point in Multi-Mode Pulse Processes
    6.
    发明申请
    System and Method for Detecting a Process Point in Multi-Mode Pulse Processes 有权
    用于在多模式脉冲过程中检测过程点的系统和方法

    公开(公告)号：US20160111261A1

    公开(公告)日：2016-04-21

    申请号：US14523770

    申请日：2014-10-24

    申请人： Lam Research Corporation

    发明人： Yassine Kabouzi ,  Jorge Luque ,  Andrew D. Bailey, III ,  Mehmet Derya Tetiker ,  Ramkumar Subramanian ,  Yoko Yamaguchi

    IPC分类号： H01J37/32 ,  H01L21/67

    CPC分类号： H01J37/32963 ,  H01J37/32082 ,  H01J37/32137 ,  H01J37/32183 ,  H01J37/32532 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67253 ,  H01L22/26

    摘要： A system and method of identifying a selected process point in a multi-mode pulsing process includes applying a multi-mode pulsing process to a selected wafer in a plasma process chamber, the multi-mode pulsing process including multiple cycles, each one of the cycles including at least one of multiple, different phases. At least one process output variable is collected for a selected at least one of the phases, during multiple cycles for the selected wafer. An envelope and/or a template of the collected at least one process output variable can be used to identify the selected process point. A first trajectory for the collected process output variable of a previous phase can be compared to a second trajectory of the process output variable of the selected phase. A multivariate analysis statistic of the second trajectory can be calculated and used to identify the selected process point.

    摘要翻译： 在多模脉冲过程中识别所选择的过程点的系统和方法包括对等离子体处理室中的所选择的晶片应用多模式脉冲处理，多模式脉冲处理包括多个周期，每个周期 包括多个不同阶段中的至少一个。 在所选晶片的多个周期期间，为所选择的至少一个相位收集至少一个过程输出变量。 可以使用所收集的至少一个过程输出变量的信封和/或模板来识别所选择的过程点。 可以将先前阶段的收集的过程输出变量的第一轨迹与选定阶段的过程输出变量的第二轨迹进行比较。 可以计算第二轨迹的多变量分析统计量，并用于识别所选择的过程点。