公开(公告)号：US11764307B2

公开(公告)日：2023-09-19

申请号：US17749106

申请日：2022-05-19

申请人： LG Display Co., Ltd.

发明人： Seung-Jin Kim ,  Jee-Ho Park ,  Seo-Yeon Im

IPC分类号： G09G3/32 ,  H01L29/786 ,  H01L29/24 ,  H01L27/12 ,  H01L29/66 ,  G09G3/3225 ,  G09G3/3266 ,  H01L29/423 ,  H01L21/465 ,  H10K59/12

CPC分类号： H01L29/78693 ,  G09G3/3225 ,  G09G3/3266 ,  H01L27/1225 ,  H01L29/247 ,  H01L29/66969 ,  H01L29/78696 ,  G09G2300/0809 ,  H01L21/465 ,  H01L29/42384 ,  H01L29/78633 ,  H10K59/12

摘要： Disclosed are a thin film transistor having an oxide semiconductor layer which is applicable to a flat display device requiring high-speed driving due to ultra-high definition, a gate driver including the same, and a display device including the same. The thin film transistor includes a first oxide semiconductor layer formed of iron-indium-zinc oxide (FIZO) and a second oxide semiconductor layer formed of indium-gallium-zinc oxide (IGZO), thus being capable of exhibiting effects, such as high reliability and high electron mobility.

公开(公告)号：US11355646B2

公开(公告)日：2022-06-07

申请号：US17083999

申请日：2020-10-29

申请人： LG Display Co., Ltd.

发明人： Seung-Jin Kim ,  Jee-Ho Park ,  Seo-Yeon Im

IPC分类号： H01L29/786 ,  G09G3/32 ,  H01L29/24 ,  H01L27/12 ,  H01L29/66 ,  G09G3/3225 ,  G09G3/3266 ,  H01L29/423 ,  H01L21/465 ,  H01L27/32

摘要： Disclosed are a thin film transistor having an oxide semiconductor layer which is applicable to a flat display device requiring high-speed driving due to ultra-high definition, a gate driver including the same, and a display device including the same. The thin film transistor includes a first oxide semiconductor layer formed of iron-indium-zinc oxide (FIZO) and a second oxide semiconductor layer formed of indium-gallium-zinc oxide (IGZO), thus being capable of exhibiting effects, such as high reliability and high electron mobility.