SYSTEMS AND METHODS FOR DRYING HIGH ASPECT RATIO STRUCTURES WITHOUT COLLAPSE USING STIMULI-RESPONSIVE SACRIFICIAL BRACING MATERIAL
    1.
    发明申请
    SYSTEMS AND METHODS FOR DRYING HIGH ASPECT RATIO STRUCTURES WITHOUT COLLAPSE USING STIMULI-RESPONSIVE SACRIFICIAL BRACING MATERIAL 有权
    用STIMULI-RESPONSAR SACRIFICIAL BRACING材料干燥高度比例结构而没有收缩的系统和方法

    公开(公告)号:US20160086829A1

    公开(公告)日:2016-03-24

    申请号:US14489615

    申请日:2014-09-18

    IPC分类号: H01L21/67 H01L21/02 B08B3/10

    摘要: Systems and methods for drying a substrate including a plurality of high aspect ratio (HAR) structures is performed after at least one of wet etching and/or wet cleaning the substrate using at least one of wet etching fluid and/or wet cleaning fluid, respectively, and without drying the substrate. Fluid between the plurality of HAR structures is displaced using a solvent including a bracing material. After the solvent evaporates, the bracing material precipitates out of solution and at least partially fills the plurality of HAR structures. The plurality of HAR structures are exposed to non-plasma based stimuli to remove the bracing material.

    摘要翻译: 在使用湿蚀刻流体和/或湿清洗液中的至少一种分别在湿法蚀刻和/或湿法清洗基板中的至少一个之后进行用于干燥包括多个高纵横比(HAR)结构的基板的系统和方法 ,并且不干燥基底。 使用包括支撑材料的溶剂来移动多个HAR结构之间的流体。 在溶剂蒸发之后,支撑材料从溶液中沉淀并且至少部分地填充多个HAR结构。 多个HAR结构暴露于非基于等离子体的刺激以去除支撑材料。

    Method for collapse-free drying of high aspect ratio structures

    公开(公告)号:US10008396B2

    公开(公告)日:2018-06-26

    申请号:US14730457

    申请日:2015-06-04

    IPC分类号: F26B3/34 H01L21/67 H01L21/02

    摘要: A method for drying a substrate including a plurality of high aspect ratio (HAR) structures includes, after at least one of (i) wet etching, and (ii) wet cleaning, and (iii) wet rinsing the substrate using at least one of (a) wet etching solution, and (b) wet cleaning solution, and (c) wet rinsing solution, respectively, and without drying the substrate: depositing, between the plurality of HAR structures, a solution that includes a polymer component, a nanoparticle component, and a solvent; wherein as the solvent evaporates, a sacrificial bracing material precipitates out of solution and at least partially fills the plurality of HAR structures, the sacrificial bracing material including (i) polymer material from the polymer component of the solution and (ii) nanoparticle material from the nanoparticle component of the solution; and exposing the substrate to plasma generated using a plasma gas chemistry to volatilize the sacrificial bracing material.

    Systems and methods for drying high aspect ratio structures without collapse using stimuli-responsive sacrificial bracing material
    3.
    发明授权
    Systems and methods for drying high aspect ratio structures without collapse using stimuli-responsive sacrificial bracing material 有权
    使用刺激响应性牺牲支撑材料干燥高纵横比结构而不使塌陷的系统和方法

    公开(公告)号:US09466511B2

    公开(公告)日:2016-10-11

    申请号:US14489615

    申请日:2014-09-18

    IPC分类号: H01L21/67 H01L21/02 F26B5/00

    摘要: Systems and methods for drying a substrate including a plurality of high aspect ratio (HAR) structures is performed after at least one of wet etching and/or wet cleaning the substrate using at least one of wet etching fluid and/or wet cleaning fluid, respectively, and without drying the substrate. Fluid between the plurality of HAR structures is displaced using a solvent including a bracing material. After the solvent evaporates, the bracing material precipitates out of solution and at least partially fills the plurality of HAR structures. The plurality of HAR structures are exposed to non-plasma based stimuli to remove the bracing material.

    摘要翻译: 在使用湿蚀刻流体和/或湿清洗液中的至少一种分别在湿法蚀刻和/或湿法清洗基板中的至少一个之后进行用于干燥包括多个高纵横比(HAR)结构的基板的系统和方法 ,并且不干燥基底。 使用包括支撑材料的溶剂来移动多个HAR结构之间的流体。 在溶剂蒸发之后,支撑材料从溶液中沉淀并且至少部分地填充多个HAR结构。 多个HAR结构暴露于非基于等离子体的刺激以去除支撑材料。

    METHOD FOR COLLAPSE-FREE DRYING OF HIGH ASPECT RATIO STRUCTURES
    4.
    发明申请
    METHOD FOR COLLAPSE-FREE DRYING OF HIGH ASPECT RATIO STRUCTURES 有权
    高纵横比结构自由干燥的方法

    公开(公告)号:US20160099160A1

    公开(公告)日:2016-04-07

    申请号:US14730457

    申请日:2015-06-04

    摘要: A method for drying a substrate including a plurality of high aspect ratio (HAR) structures includes, after at least one of (i) wet etching, and (ii) wet cleaning, and (iii) wet rinsing the substrate using at least one of (a) wet etching solution, and (b) wet cleaning solution, and (c) wet rinsing solution, respectively, and without drying the substrate: depositing, between the plurality of HAR structures, a solution that includes a polymer component, a nanoparticle component, and a solvent; wherein as the solvent evaporates, a sacrificial bracing material precipitates out of solution and at least partially fills the plurality of HAR structures, the sacrificial bracing material including (i) polymer material from the polymer component of the solution and (ii) nanoparticle material from the nanoparticle component of the solution; and exposing the substrate to plasma generated using a plasma gas chemistry to volatize the sacrificial bracing material.

    摘要翻译: 用于干燥包含多个高纵横比(HAR)结构的基底的方法包括在(i)湿蚀刻和(ii)湿清洗中的至少一个之后,和(iii)使用以下中的至少一种 (a)湿蚀刻溶液和(b)湿式清洗溶液和(c)湿式漂洗溶液,并且不干燥基材:在多个HAR结构之间沉积包含聚合物组分,纳米颗粒的溶液 组分和溶剂; 其中当溶剂蒸发时,牺牲支撑材料从溶液中沉淀并且至少部分地填充多个HAR结构,牺牲支撑材料包括(i)来自溶液的聚合物组分的聚合物材料和(ii)来自溶液的纳米颗粒材料 溶液的纳米颗粒组分; 并将衬底暴露于使用等离子体气体化学物质产生的等离子体以挥发牺牲支撑材料。