公开(公告)号：US20080087953A1

公开(公告)日：2008-04-17

申请号：US11869378

申请日：2007-10-09

申请人： Kyong-Tae CHU ,  Gyu-Gwang Sim ,  Jong-Min Kim

发明人： Kyong-Tae CHU ,  Gyu-Gwang Sim ,  Jong-Min Kim

IPC分类号： H01L27/088

CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/4238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A power metal oxide silicon field effect transistor in which sources are connected to each other, a single source supplies electrons to two channels, a contact surface between the source and a channel is variously changed to be maximized such that large current flows in a small area, and an electrical field is not concentrated to a gate edge.

摘要翻译： 一种功率金属氧化物硅场效应晶体管，其中源极彼此连接，单个源将电子提供给两个通道，源极和沟道之间的接触表面被不同地改变为最大化，使得大电流在小面积中流动 并且电场不集中到栅极边缘。