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公开(公告)号：US08963120B2
公开(公告)日：2015-02-24
申请号：US13514395
申请日：2010-11-02
CPC分类号： H01L33/22 , G02B1/005 , H01L33/20 , H01L33/38 , H01L2933/0083
摘要： An optoelectronic semiconductor component includes a semiconductor layer sequence having at least one active layer, and a photonic crystal that couples radiation having a peak wavelength out of or into the semiconductor layer sequence, wherein the photonic crystal is at a distance from the active layer and formed by superimposition of at least two lattices having mutually different reciprocal lattice constants normalized to the peak wavelength.
摘要翻译： 光电子半导体部件包括具有至少一个有源层的半导体层序列和将具有峰值波长的辐射耦合到半导体层序列中的光子晶体，其中光子晶体距离有源层一定距离并形成 通过叠加具有相对于峰值波长归一化的相互不同的互逆晶格常数的至少两个晶格。
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公开(公告)号：US20120261642A1
公开(公告)日：2012-10-18
申请号：US13514395
申请日：2010-11-02
CPC分类号： H01L33/22 , G02B1/005 , H01L33/20 , H01L33/38 , H01L2933/0083
摘要： An optoelectronic semiconductor component includes a semiconductor layer sequence having at least one active layer, and a photonic crystal that couples radiation having a peak wavelength out of or into the semiconductor layer sequence, wherein the photonic crystal is at a distance from the active layer and formed by superimposition of at least two lattices having mutually different reciprocal lattice constants normalized to the peak wavelength.
摘要翻译： 光电子半导体部件包括具有至少一个有源层的半导体层序列和将具有峰值波长的辐射耦合到半导体层序列中的光子晶体，其中光子晶体距离有源层一定距离并形成 通过叠加具有相对于峰值波长归一化的相互不同的互逆晶格常数的至少两个晶格。
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公开(公告)号：US20120299041A1
公开(公告)日：2012-11-29
申请号：US13515256
申请日：2010-11-17
IPC分类号： H01L33/60
CPC分类号： H01L33/56 , H01L31/035281 , H01L33/505
摘要： An optoelectronic semiconductor component includes a radiation emitting semiconductor chip having a radiation coupling out area. Electromagnetic radiation generated in the semiconductor chip leaves the semiconductor chip via the radiation coupling out area. A converter element is disposed downstream of the semiconductor chip at its radiation coupling out area. The converter element is configured to convert electromagnetic radiation emitted by the semiconductor chip. The converter element has a first surface facing away from the radiation coupling out area. A reflective encapsulation encapsulates the semiconductor chip and portions of the converter element at side areas in a form-fitting manner. The first surface of the converter element is free of the reflective encapsulation.
摘要翻译： 光电子半导体元件包括具有辐射耦合输出区域的辐射发射半导体芯片。 在半导体芯片中产生的电磁辐射通过辐射耦合输出区离开半导体芯片。 转换器元件设置在半导体芯片的辐射耦合输出区域的下游。 转换器元件被配置为转换由半导体芯片发射的电磁辐射。 转换器元件具有背离辐射耦合输出区域的第一表面。 反射封装以形状配合的方式将半导体芯片和转换器元件的部分封装在侧面区域。 转换器元件的第一表面没有反射封装。
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公开(公告)号：US09842972B2
公开(公告)日：2017-12-12
申请号：US13516848
申请日：2010-12-13
申请人： Krister Bergenek , Mikael Ahlstedt , Ute Liepold
发明人： Krister Bergenek , Mikael Ahlstedt , Ute Liepold
CPC分类号： H01L33/50 , H01L33/025 , H01L33/08 , H01L33/20 , H01L33/58 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： A radiation-emitting semiconductor component includes a semiconductor body having an active layer which emits electromagnetic radiation of a first wavelength λ1 in a main radiation direction, and having a luminescence conversion layer, which converts at least part of the emitted radiation into radiation of a second wavelength λ2, which is greater than the first wavelength λ1.
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公开(公告)号：US20140133148A1
公开(公告)日：2014-05-15
申请号：US14130681
申请日：2012-06-25
IPC分类号： F21K99/00
CPC分类号： F21K9/64 , H01L25/0753 , H01L33/507 , H01L33/58 , H01L2924/0002 , H01L2924/00
摘要： A lighting device may include: a carrier having a mounting surface, at least one luminescence diode chip having, at its side facing away from the carrier, a radiation exit surface, through which electromagnetic radiation generated in the luminescence diode chip during operation emerges at least partly, at least one optical body designed in a radiation-transmissive fashion, and a shaped body including a phosphor, wherein each luminescence diode chip is fixed to the mounting surface on the carrier, each optical body is fixed to the radiation exit surface of an assigned luminescence diode chip, the shaped body encloses each optical body in a positively locking manner at a side surface of the optical body, and the phosphor converts at least part of the electromagnetic radiation generated in at least one of the luminescence diode chips during operation.
摘要翻译： 照明装置可以包括：具有安装表面的载体，至少一个发光二极管芯片，其在其背离载体的一侧具有辐射出射表面，在操作期间至少产生在发光二极管芯片中产生的电磁辐射至少 部分地，以辐射透射的方式设计的至少一个光学体和包括磷光体的成形体，其中每个发光二极管芯片固定到载体上的安装表面，每个光学体固定到辐射出射表面 成形体在光学体的侧表面以积极锁定的方式包围每个光学体，并且荧光体在操作期间转换至少一个发光二极管芯片中产生的电磁辐射的至少一部分。
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公开(公告)号：US09423082B2
公开(公告)日：2016-08-23
申请号：US14130681
申请日：2012-06-25
IPC分类号： F21K99/00 , H01L25/075 , H01L33/50 , H01L33/58
CPC分类号： F21K9/64 , H01L25/0753 , H01L33/507 , H01L33/58 , H01L2924/0002 , H01L2924/00
摘要： A lighting device may include: a carrier having a mounting surface, at least one luminescence diode chip having, at its side facing away from the carrier, a radiation exit surface, through which electromagnetic radiation generated in the luminescence diode chip during operation emerges at least partly, at least one optical body designed in a radiation-transmissive fashion, and a shaped body including a phosphor, wherein each luminescence diode chip is fixed to the mounting surface on the carrier, each optical body is fixed to the radiation exit surface of an assigned luminescence diode chip, the shaped body encloses each optical body in a positively locking manner at a side surface of the optical body, and the phosphor converts at least part of the electromagnetic radiation generated in at least one of the luminescence diode chips during operation.
摘要翻译： 照明装置可以包括：具有安装表面的载体，至少一个发光二极管芯片，其在其背离载体的一侧具有辐射出射表面，在操作期间至少产生在发光二极管芯片中产生的电磁辐射至少 部分地，以辐射透射的方式设计的至少一个光学体和包括磷光体的成形体，其中每个发光二极管芯片固定到载体上的安装表面，每个光学体固定到辐射出射表面 成形体在光学体的侧表面以积极锁定的方式包围每个光学体，并且荧光体在操作期间转换至少一个发光二极管芯片中产生的电磁辐射的至少一部分。
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公开(公告)号：US20160126221A1
公开(公告)日：2016-05-05
申请号：US14436486
申请日：2013-10-16
申请人： Reiner Windisch , Krister Bergenek
发明人： Reiner Windisch , Krister Bergenek
IPC分类号： H01L25/075 , H01L33/56 , H01L33/58 , H01L33/50
CPC分类号： H01L25/0753 , H01L33/504 , H01L33/56 , H01L33/58 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A light-emitting diode module for emitting white light includes a first light emitting diode chip for generating radiation in the blue spectral range having a first peak wavelength, a second light emitting diode chip for generating radiation in the blue spectral range having a second peak wavelength, a third light emitting diode chip for generating radiation in the red spectral range having a third peak wavelength, a first and a second phosphors disposed downstream of the first and the second light emitting diode chips, respectively. The first light emitting diode chip with the first phosphor generates a first mixed radiation and the second light emitting diode chip with the second phosphor generates a second mixed radiation. The first phosphor exhibits a first absorption maximum at a wavelength greater than the first peak wavelength. The second phosphor exhibits a second absorption maximum at a wavelength less than the second peak wavelength.
摘要翻译： 用于发射白光的发光二极管模块包括用于在具有第一峰值波长的蓝色光谱范围内产生辐射的第一发光二极管芯片，用于产生具有第二峰值波长的蓝色光谱范围内的辐射的第二发光二极管芯片 用于产生具有第三峰值波长的红色光谱范围内的辐射的第三发光二极管芯片，分别位于第一和第二发光二极管芯片下游的第一和第二荧光体。 具有第一荧光体的第一发光二极管芯片产生第一混合辐射，并且具有第二荧光体的第二发光二极管芯片产生第二混合辐射。 第一荧光体在大于第一峰值波长的波长处呈现第一吸收最大值。 第二荧光体在小于第二峰值波长的波长处表现出第二吸收最大值。
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公开(公告)号：US09029907B2
公开(公告)日：2015-05-12
申请号：US13515256
申请日：2010-11-17
IPC分类号： H01L33/60 , H01L33/56 , H01L31/0352 , H01L33/50
CPC分类号： H01L33/56 , H01L31/035281 , H01L33/505
摘要： An optoelectronic semiconductor component includes a radiation emitting semiconductor chip having a radiation coupling out area. Electromagnetic radiation generated in the semiconductor chip leaves the semiconductor chip via the radiation coupling out area. A converter element is disposed downstream of the semiconductor chip at its radiation coupling out area. The converter element is configured to convert electromagnetic radiation emitted by the semiconductor chip. The converter element has a first surface facing away from the radiation coupling out area. A reflective encapsulation encapsulates the semiconductor chip and portions of the converter element at side areas in a form-fitting manner. The first surface of the converter element is free of the reflective encapsulation.
摘要翻译： 光电子半导体元件包括具有辐射耦合输出区域的辐射发射半导体芯片。 在半导体芯片中产生的电磁辐射通过辐射耦合输出区离开半导体芯片。 转换器元件设置在半导体芯片的辐射耦合输出区域的下游。 转换器元件被配置为转换由半导体芯片发射的电磁辐射。 转换器元件具有背离辐射耦合输出区域的第一表面。 反射封装以形状配合的方式将半导体芯片和转换器元件的部分封装在侧面区域。 转换器元件的第一表面没有反射封装。
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9.发明申请Electric Resistance Element Suitable for Light-Emitting Diode, Laser Diodes, or Photodetectors 有权适用于发光二极管，激光二极管或光电探测器的电阻元件公开(公告)号：US20130193454A1
公开(公告)日：2013-08-01
申请号：US13579830
申请日：2011-02-01
申请人： Krister Bergenek
发明人： Krister Bergenek
IPC分类号： H01L49/02
摘要： An electric resistance element comprising: a base body, which is formed with a semiconductor material; a first contact element, which is electrically conductively connected to the base body; and a second contact element, which is electrically conductively connected to the base body. The base body has a first main surface into which a cutout is introduced. The first contact element is electrically conductively connected to the base body at least in places in the cutout. The base body has a second main surface, which is arranged in a manner lying opposite the first main surface. The second contact element is electrically conductively connected to the base body at least in places at the second main surface
摘要翻译： 一种电阻元件，包括：基体，其形成有半导体材料; 第一接触元件，其电导体连接到所述基体; 以及第二接触元件，其电连接到所述基体。 基体具有引入切口的第一主表面。 至少在切口中的位置，第一接触元件与基体电连接。 基体具有以与第一主表面相对的方式设置的第二主表面。 所述第二接触元件至少在所述第二主表面的位置处导电地连接到所述基体
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公开(公告)号：US20130168720A1
公开(公告)日：2013-07-04
申请号：US13807594
申请日：2011-06-29
IPC分类号： H01L33/50
摘要： An optoelectronic component includes at least one radiation-emitting semiconductor element. At least one converter element is used to convert the electromagnetic radiation emitted by the semiconductor element. At least one filter element, which includes filter particles or is formed by the same, scatters and/or absorbs at least one pre-definable wavelength range of the electromagnetic radiation emitted by the semiconductor element more strongly than a wavelength range that is different from the predefined wavelength range. The filter particles have a d50 value, measured in Q0, of at least 0.5 nm to no more than 500 nm and/or the filter particles are designed at least in some areas in a thread-like manner and in a thread-like region have a diameter that is at least 0.5 nm and no more than 500 nm.
摘要翻译： 光电子部件包括至少一个辐射发射半导体元件。 使用至少一个转换器元件来转换由半导体元件发射的电磁辐射。 包括过滤器颗粒或由其形成的至少一个过滤器元件比不同于以下的波长范围更强烈地散射和/或吸收由半导体元件发射的电磁辐射的至少一个预定义波长范围 预定波长范围。 过滤器颗粒具有在Q0中测量的至少0.5nm至不大于500nm的d50值和/或至少在某些区域以线状方式设计过滤颗粒，并且在螺纹状区域中 直径为至少0.5nm且不大于500nm。
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