公开(公告)号：US08505479B2

公开(公告)日：2013-08-13

申请号：US12877187

申请日：2010-09-08

申请人： Kousuke Yoshihara ,  Tomohiro Iseki

发明人： Kousuke Yoshihara ,  Tomohiro Iseki

IPC分类号： B05C11/00 ,  B05C11/02

CPC分类号： H01L21/6715 ,  G03F7/162

摘要： A resist coating apparatus supplies a resist solution to substantially the center of a target substrate to be processed while rotating the target substrate at a first rotational speed, then decelerates the rotation of the substrate to a second rotational speed lower than the first rotational speed, or until rotational halt, makes the deceleration smaller in the deceleration step as the rotational speed becomes closer to the second rotational speed or the rotational halt, and accelerates the rotation of the substrate to a third rotational speed higher than the second rotational speed to spin off a residue of the resist solution.

摘要翻译： 抗蚀涂层装置在以第一转速旋转目标基板的同时将抗蚀剂溶液基本上提供到待加工的目标基板的中心，然后使基板的旋转减速到低于第一转速的第二转速，或 直到旋转停止，随着转速变得更接近于第二转速或转动停止，减速步骤中的减速度变小，并且将基板的旋转加速到高于第二转速的第三转速，以使其脱离 抗蚀剂溶液的残留物。

公开(公告)号：US08414972B2

公开(公告)日：2013-04-09

申请号：US12530345

申请日：2008-02-28

申请人： Kousuke Yoshihara ,  Tomohiro Iseki ,  Koji Takayanagi

发明人： Kousuke Yoshihara ,  Tomohiro Iseki ,  Koji Takayanagi

IPC分类号： B05D3/12

CPC分类号： H01L21/02104 ,  B05D1/005 ,  G03F7/162 ,  H01L21/02282 ,  H01L21/6715

摘要： In a coating step, a substrate is rotated at a high speed, and in that state a resist solution is discharged from a first nozzle to a central portion of the substrate to apply the resist solution over the substrate. Subsequently, in a flattening step, the rotation of the substrate is decelerated and the substrate is rotated at a low speed to flatten the resist solution on the substrate. In this event, the discharge of the resist solution by the first nozzle in the coating step is performed until a middle of the flattening step, and when the discharge of the resist solution is finished in the flattening step, the first nozzle is moved to move a discharge position of the resist solution from the central portion of the substrate. According to the present invention, the resist solution can be applied uniformly within the substrate.

摘要翻译： 在涂布步骤中，基板高速旋转，并且在该状态下，将抗蚀剂溶液从第一喷嘴排出到基板的中心部分，以将抗蚀剂溶液涂覆在基板上。 随后，在平坦化步骤中，基板的旋转减速，并且基板以低速旋转以使基板上的抗蚀剂溶液平坦化。 在这种情况下，在涂布步骤中，通过第一喷嘴对抗蚀剂溶液的排出进行到平坦化阶段的中间，并且当在平坦化步骤中完成抗蚀剂溶液的排出时，第一喷嘴移动 抗蚀剂溶液从衬底的中心部分的放电位置。 根据本发明，能够将抗蚀剂溶液均匀地涂布在基板内。

公开(公告)号：US08318247B2

公开(公告)日：2012-11-27

申请号：US12205999

申请日：2008-09-08

申请人： Kousuke Yoshihara ,  Tomohiro Iseki ,  Koji Takayanagi

发明人： Kousuke Yoshihara ,  Tomohiro Iseki ,  Koji Takayanagi

IPC分类号： B05D3/12

CPC分类号： G03F7/162

摘要： The present invention includes: a first step of discharging a coating solution from a nozzle to a center portion of the substrate to apply the coating solution on a surface of the substrate while rotating the substrate; a second step of decelerating, after the first step, the rotation of the substrate and continuously rotating the substrate; and a third step of accelerating, after the second step, the rotation of the substrate to dry the coating solution on the substrate, wherein: the substrate is rotated at a fixed speed of a first speed immediately before the first step; and in the first step, the rotation of the substrate which is at the first speed before start of the first step is gradually accelerated after the start of the first step so as to make the speed continuously change, and the acceleration of the rotation of the substrate is gradually decreased so as to make the speed of the rotation of the substrate converge in a second speed higher than the first speed at end of the first step.

摘要翻译： 本发明包括：第一步骤，将涂布液从喷嘴排出到基板的中心部分，以在旋转基板的同时将涂布溶液施加到基板的表面上; 在第一步骤之后使基板旋转并使基板连续旋转的第二步骤; 以及第三步骤，在所述第二步骤之后加速所述基板的旋转以使所述基板上的所述涂布溶液干燥，其中：所述基板在所述第一步骤之前以一速度的固定速度旋转; 并且在第一步骤中，在第一步骤开始之后以第一速度的基板的旋转在第一步骤开始之后逐渐加速，以使得速度连续变化，并且旋转的加速度 基板逐渐减小，以使得基板的旋转速度在第一步骤结束时以比第一速度高的第二速度会聚。

公开(公告)号：US07906173B2

公开(公告)日：2011-03-15

申请号：US11549826

申请日：2006-10-16

申请人： Kousuke Yoshihara ,  Tomohiro Iseki

发明人： Kousuke Yoshihara ,  Tomohiro Iseki

IPC分类号： B05D3/12

CPC分类号： H01L21/6715 ,  G03F7/162

摘要： A resist coating method supplies a resist solution to substantially the center of a target substrate to be processed while rotating the target substrate at a first rotational speed, then reduces a rotational speed of the target substrate to a second rotational speed lower than the first rotational speed, reduces the rotational speed of the target substrate to a third rotational speed lower than the second rotational speed or until rotational halt to adjust the film thickness of the resist solution, and accelerates the rotation of the target substrate to a fourth rotational speed higher than the third rotational speed to spin off a residue of the resist solution.

摘要翻译： 抗蚀剂涂布方法在以第一转速旋转目标基板的同时将抗蚀剂溶液基本上提供到待加工的目标基板的中心，然后将目标基板的转速降低到低于第一转速的第二转速 将目标基板的旋转速度降低到低于第二旋转速度的第三旋转速度，或者直到旋转停止，以调整抗蚀剂溶液的膜厚度，并且将目标基板的旋转加速至高于 第三旋转速度以分离抗蚀剂溶液的残留物。

公开(公告)号：US08496991B2

公开(公告)日：2013-07-30

申请号：US13236750

申请日：2011-09-20

申请人： Kousuke Yoshihara ,  Tomohiro Iseki

发明人： Kousuke Yoshihara ,  Tomohiro Iseki

IPC分类号： B05D3/12

CPC分类号： H01L21/6715 ,  G03F7/162

摘要： The present invention supplies a solvent to a front surface of a substrate while rotating the substrate. The substrate is acceleratingly rotated to a first number of rotations, and a resist solution is supplied to a central portion of the substrate during the accelerating rotation and the rotation at a first number of rotations. The substrate is deceleratingly rotated to a second number of rotations, and after the number of rotations of the substrate reaches the second number of rotations, the resist solution is discharged to the substrate. The substrate is then acceleratingly rotated to a third number of rotations higher than the second number of rotations so that the substrate is rotated at the third number of rotations. According to the present invention, consumption of the resist solution can be suppressed and a high in-plane uniformity can be obtained for the film thickness of the resist film.

摘要翻译： 本发明在旋转基板的同时将溶剂供给到基板的前表面。 基板被加速旋转到第一转数，并且在加速旋转期间以及以第一转数旋转时，将抗蚀剂溶液供应到基板的中心部分。 基板减速旋转到第二转数，并且在基板的转数达到第二转数之后，将抗蚀剂溶液排出到基板。 然后将衬底加速旋转到高于第二转数的第三转数，使得衬底以第三转数旋转。 根据本发明，可以抑制抗蚀剂溶液的消耗，并且可以获得抗蚀剂膜的膜厚度的高的面内均匀性。

公开(公告)号：US20110096304A1

公开(公告)日：2011-04-28

申请号：US12904458

申请日：2010-10-14

申请人： Hirofumi TAKEGUCHI ,  Tomohiro Iseki ,  Yuichi Yoshida ,  Kousuke Yoshihara

发明人： Hirofumi TAKEGUCHI ,  Tomohiro Iseki ,  Yuichi Yoshida ,  Kousuke Yoshihara

IPC分类号： G03B27/52 ,  G03D3/00

CPC分类号： G03F7/3021

摘要： A pretreatment process, carried out prior to a developing process, spouts pure water, namely, a diffusion-assisting liquid for assisting the spread of a developer over the surface of a wafer, through a cleaning liquid spouting nozzle onto a central part of the wafer to form a puddle of pure water. The developer is spouted onto the central part of the wafer for prewetting while the wafer is rotated at a high rotating speed to spread the developer over the surface of the wafer. The developer dissolves the resist film partly and produces a solution. The rotation of the wafer is reversed, for example, within 7 s in which the solution is being produced to reduce the water-repellency of the wafer by spreading the solution over the entire surface of the wafer. Then, the developer is spouted onto the rotating wafer to spread the developer on the surface of the wafer.

摘要翻译： 在显影过程之前进行的预处理过程，喷出纯水，即用于辅助显影剂在晶片表面上的扩散的扩散辅助液体，通过清洗液喷射喷嘴到达晶片的中心部分 形成一个纯净的水坑。 将显影剂喷射到晶片的中心部分以进行预润湿，同时晶片以高转速旋转以将显影剂铺展在晶片的表面上。 显影剂部分地溶解抗蚀剂膜并产生溶液。 晶片的旋转例如在7秒内相反，其中产生溶液以通过在晶片的整个表面上扩散溶液来降低晶片的拒水性。 然后，将显影剂喷射到旋转的晶片上，以将显影剂铺展在晶片的表面上。

公开(公告)号：US07820243B2

公开(公告)日：2010-10-26

申请号：US11549793

申请日：2006-10-16

申请人： Kousuke Yoshihara ,  Tomohiro Iseki

发明人： Kousuke Yoshihara ,  Tomohiro Iseki

IPC分类号： B05D3/12

CPC分类号： H01L21/6715 ,  G03F7/162

摘要： A resist coating method supplies a resist solution to substantially the center of a target substrate to be processed while rotating the target substrate at a first rotational speed, then decelerates the rotation of the substrate to a second rotational speed lower than the first rotational speed, or until rotational halt, makes the deceleration smaller in the deceleration step as the rotational speed becomes closer to the second rotational speed or the rotational halt, and accelerates the rotation of the substrate to a third rotational speed higher than the second rotational speed to spin off a residue of the resist solution.

摘要翻译： 抗蚀剂涂布方法在以第一旋转速度旋转目标基板的同时将抗蚀剂溶液基本上提供到待加工的目标基板的中心，然后将基板的旋转减速到低于第一转速的第二转速，或 直到旋转停止，随着转速变得更接近于第二转速或转动停止，减速步骤中的减速度变小，并且将基板的旋转加速到高于第二转速的第三转速，以使其脱离 抗蚀剂溶液的残留物。

公开(公告)号：US08956694B2

公开(公告)日：2015-02-17

申请号：US12904458

申请日：2010-10-14

申请人： Hirofumi Takeguchi ,  Tomohiro Iseki ,  Yuichi Yoshida ,  Kousuke Yoshihara

发明人： Hirofumi Takeguchi ,  Tomohiro Iseki ,  Yuichi Yoshida ,  Kousuke Yoshihara

IPC分类号： B05D3/12 ,  G03C5/29 ,  G03F7/30

CPC分类号： G03F7/3021

摘要： A pretreatment process, carried out prior to a developing process, spouts pure water, namely, a diffusion-assisting liquid for assisting the spread of a developer over the surface of a wafer, through a cleaning liquid spouting nozzle onto a central part of the wafer to form a puddle of pure water. The developer is spouted onto the central part of the wafer for prewetting while the wafer is rotated at a high rotating speed to spread the developer over the surface of the wafer. The developer dissolves the resist film partly and produces a solution. The rotation of the wafer is reversed, for example, within 7 s in which the solution is being produced to reduce the water-repellency of the wafer by spreading the solution over the entire surface of the wafer. Then, the developer is spouted onto the rotating wafer to spread the developer on the surface of the wafer.

摘要翻译： 在显影过程之前进行的预处理过程，喷出纯水，即用于辅助显影剂在晶片表面上的扩散的扩散辅助液体，通过清洗液喷射喷嘴到达晶片的中心部分 形成一个纯净的水坑。 将显影剂喷射到晶片的中心部分以进行预润湿，同时晶片以高转速旋转以将显影剂铺展在晶片的表面上。 显影剂部分地溶解抗蚀剂膜并产生溶液。 晶片的旋转例如在7秒内相反，其中产生溶液以通过在晶片的整个表面上扩散溶液来降低晶片的拒水性。 然后，将显影剂喷射到旋转的晶片上，以将显影剂铺展在晶片的表面上。

公开(公告)号：US08304018B2

公开(公告)日：2012-11-06

申请号：US12703236

申请日：2010-02-10

申请人： Koji Takayanagi ,  Tomohiro Iseki ,  Katsunori Ichino ,  Kousuke Yoshihara

发明人： Koji Takayanagi ,  Tomohiro Iseki ,  Katsunori Ichino ,  Kousuke Yoshihara

IPC分类号： B05D3/12

CPC分类号： B05D1/005 ,  G03F7/162 ,  H01L21/6715

摘要： There is provided a coating method which can efficiently apply a coating liquid, such as a liquid resist, to the entire surface of a wafer even when the coating liquid is supplied in a smaller amount than a conventional one, and can therefore reduce the consumption of the coating liquid. The coating method includes: a first step of rotating the substrate at a first rotating speed while supplying the coating liquid onto approximately the center of the rotating substrate; a second step of rotating the substrate at a second rotating speed which is lower than the first rotating speed; a third step of rotating the substrate at a third rotating speed which is higher than the second rotating speed; and a fourth step of rotating the substrate at a fourth rotating speed which is higher than the second rotating speed and lower than the third rotating speed.

摘要翻译： 提供一种能够有效地将涂布液（例如液体抗蚀剂）施加到晶片的整个表面的涂布方法，即使当以比常规涂布液更少的量供给涂布液时，也可以减少 涂布液体。 涂布方法包括：第一步骤，在将涂布液提供到旋转基板的大致中心的同时以第一旋转速度旋转基板; 第二步骤，以低于第一转速的第二转速旋转衬底; 第三步骤，以比第二转速高的第三转速旋转衬底; 以及第四步骤，以比第二转速高且低于第三转速的第四转速旋转衬底。

公开(公告)号：US08043657B2

公开(公告)日：2011-10-25

申请号：US11851747

申请日：2007-09-07

申请人： Kousuke Yoshihara ,  Tomohiro Iseki

发明人： Kousuke Yoshihara ,  Tomohiro Iseki

IPC分类号： B05D3/12

CPC分类号： H01L21/6715 ,  G03F7/162

摘要： The present invention supplies a solvent to the front surface of a substrate while rotating the substrate. Subsequently, the substrate is acceleratingly rotated to a first number of rotations, and a resist solution is supplied to a central portion of the substrate during the accelerating rotation and the rotation at the first number of rotations. Thereafter, the substrate is deceleratingly rotated to a second number of rotations, and after the number of rotations of the substrate reaches the second number of rotations, the resist solution is discharged to the substrate. The substrate is then acceleratingly rotated to a third number of rotations higher than the second number of rotations so that the substrate is rotated at the third number of rotations. According to the present invention, in application of the resist solution by spin coating, the consumption of the resist solution can be suppressed, and a high in-plane uniformity can be obtained for the film thickness of the resist film.

摘要翻译： 本发明在旋转衬底的同时向衬底的前表面提供溶剂。 随后，基板被加速旋转到第一转数，并且在加速旋转和第一转数旋转期间，将抗蚀剂溶液供应到基板的中心部分。 此后，基板减速旋转到第二转数，在基板的转数达到第二转数之后，将抗蚀剂溶液排出到基板。 然后将衬底加速旋转到高于第二转数的第三转数，使得衬底以第三转数旋转。 根据本发明，通过旋涂的抗蚀剂溶液的应用，可以抑制抗蚀剂溶液的消耗，并且可以获得抗蚀剂膜的膜厚度的高的面内均匀性。