公开(公告)号：US20250146180A1

公开(公告)日：2025-05-08

申请号：US18916982

申请日：2024-10-16

Applicant: Korea Photonics Technology Institute

Inventor： Seon Hoon KIM ,  Ju Hyeon CHOI ,  Doo Gun KIM ,  Jeong Hwan IN ,  Ka Ram HAN ,  So Young KIM ,  Won Bae SOHN ,  June Hyuk KANG ,  Jehwan HWANG

IPC: C30B33/02 ,  C30B15/00 ,  C30B29/30 ,  H10N30/04

Abstract: Disclosed is a post-treatment method of a piezoelectric oxide single crystal substrate for suppressing pyroelectric properties of the substrate, and a method for manufacturing a lithium tantalate single crystal substrate using the same. According to one aspect of the present disclosure, there is provided a post-treatment method of a piezoelectric oxide single crystal substrate, the method including: loading at least one reducing agent and the single crystal substrate into a treatment device; and performing reduction treatment by heat treating the substrate while maintaining the inside of the treatment device in a preset environment, wherein the preset environment means that heat treatment is performed at a temperature of 200° C. to 400° C. under normal pressure.