Patent search ap:("Korea Institute of Ceramic Engineering AND Technology") AND inv:"Dae-Woo Jeon" Page 1

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发明授权
Manufacturing method of gallium oxide thin film for power semiconductor using dopant activation technology 有权

公开(公告)号：US11476116B2

公开(公告)日：2022-10-18

申请号：US17358284

申请日：2021-06-25

Applicant: Korea Institute of Ceramic Engineering and Technology

Inventor： Dae-Woo Jeon , Ji-Hyeon Park

IPC: H01L21/02 , H01L21/265

Abstract: Disclosed is a method of manufacturing a gallium oxide thin film for a power semiconductor using a dopant activation technology that maximizes dopant activation effect and rearrangement effect of lattice in a grown epitaxial at the same time by performing in-situ annealing in a growth condition of a nitrogen atmosphere at the same time as the growth of a doped layer is finished.

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