公开(公告)号：US20160181242A1

公开(公告)日：2016-06-23

申请号：US14960501

申请日：2015-12-07

Applicant: Korea Electronics Technology Institute

Inventor： Jong Min YOOK ,  Jun Chul KIM ,  Dong Su KIM ,  Se Hoon PARK ,  Jong In RYU ,  Jong Chul PARK

IPC: H01L27/07 ,  H01L49/02

CPC classification number: H01L28/60 ,  H01L27/016 ,  H01L28/10

Abstract: The present invention relates to a passive device and manufacturing method thereof. A capacitor according to the present invention includes: a capacitor thin film pattern formed on the upper surface of a substrate; a plurality of trenches formed by etching the substrate formed with the capacitor thin film pattern which defines the unit area of the capacitor; an insulation layer, which fills the trench, formed with capacitor interconnection holes for exposing the metal layers formed in the substrate and constituting the capacitor; and a plurality of capacitor electrode interconnection wires formed by filling the capacitor interconnection holes with a conductive material, wherein the lower surface of the substrate is being polished in a way that the insulation layer formed in the trenches is exposed.

Abstract translation: 无源器件及其制造方法技术领域本发明涉及无源器件及其制造方法。 根据本发明的电容器包括：形成在基板的上表面上的电容器薄膜图案; 通过蚀刻形成有限定电容器的单位面积的电容器薄膜图案的基板形成的多个沟槽; 绝缘层，其填充沟槽，形成有用于暴露形成在衬底中并构成电容器的金属层的电容器互连孔; 以及通过用导电材料填充电容器互连孔而形成的多个电容器电极互连线，其中衬底的下表面被抛光，使得形成在沟槽中的绝缘层被暴露。