公开(公告)号：US11387251B2

公开(公告)日：2022-07-12

申请号：US16800214

申请日：2020-02-25

申请人： Kioxia Corporation

发明人： Shigeki Kobayashi ,  Toru Matsuda ,  Hanae Ishihara

IPC分类号： H01L27/11556 ,  H01L27/11582 ,  H01L29/26

摘要： A memory device includes a substrate, first, second, and third conductive layers, a stack of fourth conductive layers, a memory pillar, and an insulator. The first, second, and third conductive layer are provided above the substrate. The stack of fourth conductive layers is provided above the third conductive layer. The memory pillar extends in the thickness direction through the stack and the third conductive layer and into the second conductive layer in a first region of the memory device. The insulator extends in a thickness direction through the stack, the third conductive layer, and the second conductive layer in a second region of the memory device. The insulator also extends in a second surface direction of the substrate. A thickness of the third conductive layer in a region through which the insulator extends is greater than a thickness of the third conductive layer in the first region.