公开(公告)号：US11791279B2

公开(公告)日：2023-10-17

申请号：US17020047

申请日：2020-09-14

Applicant: Kioxia Corporation

Inventor： Tatsunori Isogai ,  Masaki Noguchi ,  Tatsufumi Hamada ,  Shinichi Sotome

IPC: H01L23/552 ,  H10B43/27 ,  H10B43/35 ,  H01L21/324

CPC classification number: H01L23/552 ,  H01L21/324 ,  H10B43/27 ,  H10B43/35

Abstract: A semiconductor device according to an embodiment includes a stacked body having first films and second films that are alternately stacked, a light shielding film provided in a specific layer of the stacked body and having a higher optical absorptivity than that of the second films, and a channel film extending in the stacked body in the stacking direction. The channel film includes a first part located on an upper side than the light shielding film in the stacking direction and containing a monocrystalline semiconductor.

公开(公告)号：US12238930B2

公开(公告)日：2025-02-25

申请号：US17465496

申请日：2021-09-02

Applicant: Kioxia Corporation

Inventor： Masaki Noguchi ,  Tatsunori Isogai

IPC: H10B43/35 ,  H01L23/528 ,  H10B43/27

Abstract: A semiconductor device includes: a stacked body with insulating layers and conductive layers alternately stacked along a first direction; a semiconductor layer disposed along the first direction in the stacked body; a first insulating film disposed along the first direction between the stacked body and the semiconductor layer; a second insulating film disposed along the first direction between the stacked body and the first insulating layer; a third insulating film disposed along the first direction between the stacked body and the second insulating film; and a fourth insulating film having a first portion and a second portion, the first portion being disposed between the conductive layers and the third insulating film, and the second portion being disposed along a second direction that intersects the first direction between the conductive layer and the insulating layer and being connected to the first portion, and average concentrations of deuterium in the first portion of the fourth insulating film, the third insulating film, the second insulating film, and the first insulating film are lower in an order of the second insulating film>the first insulating film>the first portion>the third insulating film.

公开(公告)号：US11862696B2

公开(公告)日：2024-01-02

申请号：US17120951

申请日：2020-12-14

Applicant: Kioxia Corporation

Inventor： Shunsuke Okada ,  Tomonori Aoyama ,  Tatsunori Isogai ,  Masaki Noguchi

IPC: H01L29/423 ,  H01L21/28 ,  H01L29/51 ,  H10B43/27

CPC classification number: H01L29/4234 ,  H01L29/40117 ,  H01L29/513 ,  H01L29/517 ,  H10B43/27

Abstract: A semiconductor storage device relating to one embodiment includes: a stacked body in which electrode films and insulating films are alternately stacked in a first direction; a first and a second charge storage films that are arranged away from each other in the first direction inside the stacked body and each face one of the electrode films; and a tunnel insulating film that extends in the first direction inside the stacked body and is in contact with the first and the second charge storage films. The first and the second charge storage films each include a first film that is in contact with the electrode film and contains a High-k material, and a second film that is provided between the first film and the tunnel insulating film and contains silicon nitride.

公开(公告)号：US12048157B2

公开(公告)日：2024-07-23

申请号：US17475660

申请日：2021-09-15

Applicant: Kioxia Corporation

Inventor： Shunsuke Okada ,  Tatsunori Isogai ,  Masaki Noguchi

IPC: H10B43/27 ,  H01L21/28 ,  H01L29/423 ,  H10B41/27

CPC classification number: H10B43/27 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/42324 ,  H01L29/4234 ,  H10B41/27

Abstract: A semiconductor storage device of an embodiment includes: a laminated body including electrode layers and insulating layers alternately stacked in a first direction; a semiconductor layer disposed in the laminated body; a first insulating film disposed between the laminated body and the semiconductor layer; a charge storage film disposed between the laminated body and the first insulating film, thicknesses of the charge storage film in a second direction crossing the first direction in the regions corresponding to the electrode layers being different from that in the regions corresponding to the insulating layers, the charge storage film comprising: a second insulating film disposed between the laminated body and the first insulating film, and a third insulating film disposed between the second insulating film and the regions corresponding to the electrode layers, the third insulating film having a density different from that of the second insulating film.

公开(公告)号：US11631694B2

公开(公告)日：2023-04-18

申请号：US17003803

申请日：2020-08-26

Applicant: KIOXIA CORPORATION

Inventor： Masaki Noguchi ,  Tatsunori Isogai

IPC: H01L27/11582 ,  H01L21/762 ,  H01L21/02

Abstract: According to one or more embodiments, a method for manufacturing a semiconductor device comprises forming a stacked film that comprises alternating first insulating layers and second insulating layers. A first insulating film, an electric charge storage layer, a second insulating film, and a first semiconductor layer are then formed in a hole in the stacked film. The method further includes forming a first recess in the stacked film, then supplying a first gas and a deuterium gas to the first recess. The first gas comprises hydrogen and oxygen.

公开(公告)号：US11282932B2

公开(公告)日：2022-03-22

申请号：US16807519

申请日：2020-03-03

Applicant: KIOXIA CORPORATION

Inventor： Shunsuke Okada ,  Tatsunori Isogai ,  Masaki Noguchi

IPC: H01L29/423 ,  H01L27/11568 ,  H01L21/02 ,  H01L29/51 ,  H01L21/28 ,  H01L27/11582

Abstract: A semiconductor memory device includes a stacked structure and a memory pillar. The stacked structure includes electrode layers and insulating layers alternately provided on a substrate. The memory pillar extends through the stacked structure in a thickness direction. The memory pillar includes a semiconductor layer extending along the thickness direction, and a first insulating film, a charge storage layer, and a second insulating film provided around the semiconductor layer. The charge storage layer contains fluorine, and a fluorine concentration in the charge storage layer has a gradient along a plane direction of the substrate with a peak. A first distance from an inner end of the charge storage layer to the peak in the plane direction is shorter than a second distance from an outer end of the charge storage layer to the peak in the plane direction.

公开(公告)号：US11769838B2

公开(公告)日：2023-09-26

申请号：US17731721

申请日：2022-04-28

Applicant: Kioxia Corporation

Inventor： Masaki Noguchi ,  Akira Takashima ,  Tatsunori Isogai

IPC: H01L29/792 ,  H01L29/51 ,  H10B43/27 ,  H10B43/35 ,  H01L49/02 ,  H01L23/528 ,  H01L21/28

CPC classification number: H01L29/7926 ,  H01L29/513 ,  H10B43/27 ,  H10B43/35 ,  H01L23/528 ,  H01L28/60 ,  H01L29/40117 ,  H01L29/518

Abstract: A semiconductor device includes a semiconductor layer, a charge storage layer disposed on the surface of the semiconductor layer via a first insulating film, and an electrode layer disposed on the surface of the charge storage layer via a second insulating film. The charge storage layer includes a first layer containing elemental aluminum and elemental nitrogen, a second layer containing elemental silicon and elemental nitrogen, and a third layer containing elemental oxygen.