公开(公告)号：US20130199106A1

公开(公告)日：2013-08-08

申请号：US13878362

申请日：2011-10-06

申请人： Keiji Ashitaka ,  Hitoshi Morinaga ,  Akihito Yasui

发明人： Keiji Ashitaka ,  Hitoshi Morinaga ,  Akihito Yasui

IPC分类号： C09K3/14

CPC分类号： C09K3/1409 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

摘要： A polishing composition contains colloidal silica particles having protrusions on the surfaces thereof. The average of values respectively obtained by dividing the height of a protrusion on the surface of each particle belonging to the part of the colloidal silica particles that has larger particle diameters than the volume average particle diameter of the colloidal silica particles by the width of a base portion of the same protrusion is no less than 0.245. Preferably, the part of the colloidal silica particles that has larger particle diameter than the volume average particle diameter of the colloidal silica particles has an average aspect ratio of no less than 1.15. Preferably, the protrusions on the surfaces of particles belonging to the part of the colloidal silica particles that has larger particle diameters than the volume average particle diameter of the colloidal silica particles have an average height of no less than 3.5 nm.

摘要翻译： 抛光组合物包含其表面上具有突起的胶体二氧化硅颗粒。 分别通过将属于粒径比胶体二氧化硅粒子的体积平均粒径大的胶体二氧化硅粒子的一部分的粒子的表面上的突起的高度除以碱的宽度而得到的值的平均值 相同突起的部分不小于0.245。 优选地，粒径比胶体二氧化硅粒子的体积平均粒径大的胶态二氧化硅粒子的平均长径比优选为1.15以上。 优选地，粒径比胶态二氧化硅粒子的体积平均粒径大的胶体二氧化硅粒子的粒子的表面上的突起的平均高度优选为3.5nm以上。

公开(公告)号：US09028574B2

公开(公告)日：2015-05-12

申请号：US13878362

申请日：2011-10-06

申请人： Keiji Ashitaka ,  Hitoshi Morinaga ,  Akihito Yasui

发明人： Keiji Ashitaka ,  Hitoshi Morinaga ,  Akihito Yasui

IPC分类号： C09K3/14 ,  C09G1/02 ,  H01L21/3105

CPC分类号： C09K3/1409 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

摘要： A polishing composition contains colloidal silica particles having protrusions on the surfaces thereof. The average of values respectively obtained by dividing the height of a protrusion on the surface of each particle belonging to the part of the colloidal silica particles that has larger particle diameters than the volume average particle diameter of the colloidal silica particles by the width of a base portion of the same protrusion is no less than 0.245. Preferably, the part of the colloidal silica particles that has larger particle diameter than the volume average particle diameter of the colloidal silica particles has an average aspect ratio of no less than 1.15. Preferably, the protrusions on the surfaces of particles belonging to the part of the colloidal silica particles that has larger particle diameters than the volume average particle diameter of the colloidal silica particles have an average height of no less than 3.5 nm.

摘要翻译： 抛光组合物包含其表面上具有突起的胶体二氧化硅颗粒。 分别通过将属于粒径比胶体二氧化硅粒子的体积平均粒径大的胶体二氧化硅粒子的一部分的粒子的表面上的突起的高度除以碱的宽度而得到的值的平均值 相同突起的部分不小于0.245。 优选地，粒径比胶体二氧化硅粒子的体积平均粒径大的胶态二氧化硅粒子的平均长径比优选为1.15以上。 优选地，粒径比胶态二氧化硅粒子的体积平均粒径大的胶体二氧化硅粒子的粒子的表面上的突起的平均高度优选为3.5nm以上。

公开(公告)号：US20090173910A1

公开(公告)日：2009-07-09

申请号：US12341241

申请日：2008-12-22

申请人： Tatsuhiko HIRANO ,  Hiroshi Mizuno ,  Yasuyuki Yamato ,  Akihito Yasui

发明人： Tatsuhiko HIRANO ,  Hiroshi Mizuno ,  Yasuyuki Yamato ,  Akihito Yasui

IPC分类号： C09K13/00

CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/3212

摘要： To provide a polishing composition which can satisfy both suppression of the surface topography and a high stock removal rate, in a polishing step in the production of a wiring structure.A polishing composition comprising abrasive grains, a processing accelerator, a nonionic surfactant represented by R-POE (I) (wherein R is a C10-16 alkyl group having a branched structure, and POE is a polyoxyethylene chain) and having an HLB of from 7 to 12, an anionic surfactant, a protective film-forming agent, an oxidizing agent, and water.

摘要翻译： 为了提供一种在制造布线结构的抛光步骤中能够同时满足表面形貌的抑制和高的剥离率的抛光组合物。 一种抛光组合物，其包含磨粒，加工促进剂，由R-POE（I）表示的非离子表面活性剂（其中R为具有支链结构的C10-16烷基，POE为聚氧乙烯链），HLB为 7〜12，阴离子表面活性剂，保护膜形成剂，氧化剂和水。

公开(公告)号：US08864860B2

公开(公告)日：2014-10-21

申请号：US12341241

申请日：2008-12-22

申请人： Tatsuhiko Hirano ,  Hiroshi Mizuno ,  Yasuyuki Yamato ,  Akihito Yasui

发明人： Tatsuhiko Hirano ,  Hiroshi Mizuno ,  Yasuyuki Yamato ,  Akihito Yasui

IPC分类号： B24D3/02 ,  C09C1/68 ,  C09K3/14 ,  C09G1/02 ,  H01L21/321

CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/3212

摘要： To provide a polishing composition which can satisfy both suppression of the surface topography and a high stock removal rate, in a polishing step in the production of a wiring structure.A polishing composition comprising abrasive grains, a processing accelerator, a nonionic surfactant represented by R-POE (I) (wherein R is a C10-16 alkyl group having a branched structure, and POE is a polyoxyethylene chain) and having an HLB of from 7 to 12, an anionic surfactant, a protective film-forming agent, an oxidizing agent, and water.

摘要翻译： 为了提供一种在制造布线结构的抛光步骤中能够同时满足表面形貌的抑制和高的剥离率的抛光组合物。 一种抛光组合物，其包含磨粒，加工促进剂，由R-POE（I）表示的非离子表面活性剂（其中R为具有支链结构的C10-16烷基，POE为聚氧乙烯链），HLB为 7〜12，阴离子表面活性剂，保护膜形成剂，氧化剂和水。