公开(公告)号：US20170069534A1

公开(公告)日：2017-03-09

申请号：US15000646

申请日：2016-01-19

Applicant: Kabushiki Kaisha Toshiba

Inventor： Ryota FUJITSUKA ,  Nobuhito KUGE ,  Kensei TAKAHASHI

IPC: H01L21/768 ,  H01L29/788 ,  H01L23/535 ,  H01L27/115 ,  H01L23/532 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L27/11524 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76832 ,  H01L27/11582 ,  H01L28/00 ,  H01L29/4991

Abstract: A semiconductor storage device according to an embodiment includes a plurality of memory cells, a first film, and a second film. The memory cells are placed at intervals in a first direction on a semiconductor substrate. The first film is placed continuously in the first direction above the memory cells so as to cover all of the memory cells and including mainly metal oxide. The second film is placed on the first film and including mainly silicon nitride or silicon dioxide.

Abstract translation: 根据实施例的半导体存储装置包括多个存储单元，第一膜和第二膜。 存储单元以半导体衬底上的第一方向间隔放置。 第一膜连续地放置在存储单元上方的第一方向上，以覆盖所有的存储单元并且主要包括金属氧化物。 第二膜放置在第一膜上，主要包括氮化硅或二氧化硅。

公开(公告)号：US20180057926A1

公开(公告)日：2018-03-01

申请号：US15430809

申请日：2017-02-13

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Fumiki AISO ,  Hajime NAGANO ,  Kensei TAKAHASHI ,  Tomohisa llNO

IPC: C23C14/24 ,  C23C14/54 ,  G01N21/17

Abstract: According to the embodiment, a vaporization system includes a vaporizer, a body, a sensor, a moving mechanism, and a supplier. The vaporizer includes a plurality of containers which can store powdered solid materials. The body in a vacuum state can house the vaporizer. The sensor detects a residue of the solid materials stored in a plurality of the containers respectively. The moving mechanism, on the basis of a detection result of the sensor, moves the plurality of the containers respectively between a first position located inside the vaporizer, and a second position located outside of the vaporizer. A supplier supplies the solid material to the container located in the second position among the plurality of the containers.

公开(公告)号：US20150255482A1

公开(公告)日：2015-09-10

申请号：US14310239

申请日：2014-06-20

Applicant: Kabushiki Kaisha Toshiba

Inventor： Kensei TAKAHASHI ,  Kazuhiro Matsuo ,  Fumiki Aiso ,  Masao Shingu ,  Masayuki Tanaka

IPC: H01L27/115

CPC classification number: H01L27/11582 ,  H01L29/40117

Abstract: A semiconductor storage device according to an embodiment includes a semiconductor layer. A tunnel dielectric film is formed on the semiconductor layer. A charge accumulation layer is formed on the tunnel dielectric film. A block film is formed on the charge accumulation layer. A control gate is formed on the block film. The block film includes a metal oxide film containing nitrogen in a concentration range equal to or lower than 5×1021 atoms/cm3 and consisting mainly of aluminum.

Abstract translation: 根据实施例的半导体存储装置包括半导体层。 在半导体层上形成隧道电介质膜。 在隧道电介质膜上形成电荷累积层。 在电荷累积层上形成块状膜。 在块膜上形成控制栅极。 阻挡膜包括含有等于或低于5×1021原子/ cm3的浓度的氮并主要由铝组成的金属氧化物膜。