公开(公告)号：US20220119936A1

公开(公告)日：2022-04-21

申请号：US17505710

申请日：2021-10-20

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Sungmin HONG ,  Hyungman LEE

IPC: C23C14/06 ,  C23C14/34 ,  H01L41/316 ,  G01N29/24

Abstract: A method of depositing an AlN thin film according to an embodiment of the disclosure comprises: a step of forming an insulating layer on a base substrate; and a step of depositing an AlN thin film on the insulating layer through a sputtering process, wherein the step of depositing the AlN thin film is performed through a continuous deposition type, at lower than a CMOS-compatible process temperature and in a state of applying a bias positive voltage to the base substrate such that the AlN thin film has an adjustable deposition thickness. Therefore, an embodiment of the disclosure is advantageous in that an AlN thin film having excellent piezo characteristics can be obtained at a low process temperature compatible with a CMOS process.