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公开(公告)号：US20190086354A1
公开(公告)日：2019-03-21
申请号：US15788714
申请日：2017-10-19
Inventor： Jung Hun YOO , Jin Min LEE , Sung Min HONG , Won Hyo KIM
IPC: G01N27/22
Abstract: Provided is a humidity sensor including a substrate, a lower electrode, a humidity-sensitive dielectric portion, and an upper electrode which are sequentially stacked and measuring humidity by sensing a difference in capacitance between electrodes according to a change in dielectric constant of the humidity-sensitive dielectric portion, wherein the humidity-sensitive dielectric portion has a plurality of cylindrical members having a circular or C-shaped cross-section erected on the lower electrode, and wherein the upper electrode has a pattern where a plurality of circular-rings or C-rings in contact with ceiling surfaces of the plurality of the cylindrical members of the humidity-sensitive dielectric portion are connected to each other.
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2.发明公开公开(公告)号：US20240212891A1
公开(公告)日：2024-06-27
申请号：US18497644
申请日：2023-10-30
Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE
Inventor： Kyu Sik SHIN , Sung Min HONG
Abstract: A thermal resistance device having a vanadium oxide layer and a method of manufacturing the thermal resistance device are proposed. The device may include a stress control pattern that can improve temperature coefficient of resistance (TCR) characteristics. The thermal resistance device may include a support comprising silicon and having an opening formed in a center thereof, and a silicon oxynitride layer formed on the support to cover the opening. The thermal resistance device may also include the stress control pattern formed of a patterned metal material on the silicon oxynitride layer over the opening. The thermal resistance device may further include the vanadium oxide layer formed to cover the stress control pattern and receiving tensile stress from the stress control pattern.
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