公开(公告)号：US20240288380A1

公开(公告)日：2024-08-29

申请号：US18405677

申请日：2024-01-05

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Jin Hyoung KIM ,  Kyu Sik SHIN ,  Cheol Ung CHA ,  Kwon Hong LEE

IPC: G01N22/00 ,  G01N1/40 ,  G01N33/44

CPC classification number: G01N22/00 ,  G01N1/4077 ,  G01N33/442

Abstract: Proposed are a microplastic concentration measurement sensor and a microplastic concentration measurement system using the sensor. The sensor may include a fluidic channel layer having a microfluidic channel formed on an upper surface thereof, and a molding layer formed on the fluidic channel layer and having first through-holes located respectively above one end and other end of the microfluidic channel. The sensor may also include a first substrate layer formed on the molding layer and having second through-holes located respectively above the first through-holes. The sensor may further include a single line formed on an upper surface of the first substrate layer, a second substrate layer formed below the fluidic channel layer, and a resonant layer formed on a lower surface of the second substrate layer.

公开(公告)号：US20240212891A1

公开(公告)日：2024-06-27

申请号：US18497644

申请日：2023-10-30

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Kyu Sik SHIN ,  Sung Min HONG

IPC: H01C7/00 ,  H01C1/01

CPC classification number: H01C7/008 ,  H01C1/01

Abstract: A thermal resistance device having a vanadium oxide layer and a method of manufacturing the thermal resistance device are proposed. The device may include a stress control pattern that can improve temperature coefficient of resistance (TCR) characteristics. The thermal resistance device may include a support comprising silicon and having an opening formed in a center thereof, and a silicon oxynitride layer formed on the support to cover the opening. The thermal resistance device may also include the stress control pattern formed of a patterned metal material on the silicon oxynitride layer over the opening. The thermal resistance device may further include the vanadium oxide layer formed to cover the stress control pattern and receiving tensile stress from the stress control pattern.

公开(公告)号：US20240337575A1

公开(公告)日：2024-10-10

申请号：US18405560

申请日：2024-01-05

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Jin Hyoung KIM ,  Kyu Sik SHIN ,  Cheol Ung CHA ,  Kwon Hong LEE

IPC: G01N15/02 ,  B01D29/44 ,  G01N15/06

CPC classification number: G01N15/0272 ,  B01D29/44 ,  G01N15/06 ,  G01N2015/0053

Abstract: Proposed is a microplastic detection sensor for detecting information about microplastic contained in a sample. The sensor may include a fluidic channel substrate including an inlet and an outlet, and a plurality of RF resonance structures. The inlet may be formed on one end of the fluidic channel substrate, and the outlet may be formed on the other end. The fluidic channel substrate may have a microfluidic channel formed therein to connect the inlet and the outlet. The microfluidic channel may move the sample toward the outlet by capillary action. In the fluidic channel substrate, a plurality of capture parts, respectively corresponding to the RF resonance structures, may be formed along the microfluidic channel and may selectively capture the microplastic by particle size. The RF resonance structures may output information about the microplastic captured in the corresponding capture part through RF resonance for the applied RF signal.

公开(公告)号：US20230157603A1

公开(公告)日：2023-05-25

申请号：US17569310

申请日：2022-01-05

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Kyu Sik SHIN ,  Yeon Hwa KWAK ,  Cheol Ung CHA

IPC: A61B5/20 ,  A61B5/00

CPC classification number: A61B5/205 ,  A61B5/6852 ,  A61B5/4381 ,  A61B2562/0247 ,  A61M25/0017

Abstract: This application relates to a pressure sensor array for urodynamic testing capable of simultaneously measuring bladder pressure, prostate pressure, and urethral pressure, and to a test apparatus including the pressure sensor array. In one aspect, the pressure sensor array for urodynamic testing is installed in a catheter and includes a base substrate having flexibility.
The pressure sensor array may also include a bladder pressure sensor formed on a portion of the base substrate to be positioned in bladder and measuring bladder pressure. The pressure sensor array may further include a prostate pressure sensor formed on a portion of the base substrate to be positioned in prostate and measuring prostate pressure. The pressure sensor array may further include a urethral pressure sensor formed on a portion of the base substrate to be positioned in urethra and measuring urethral pressure.