公开(公告)号：US20190172995A1

公开(公告)日：2019-06-06

申请号：US16163934

申请日：2018-10-18

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Suk Won JUNG ,  Nam Kyu CHO

IPC: H01L41/08 ,  H01L41/39 ,  H01L41/18 ,  H01L41/113 ,  H01L29/06 ,  H01L29/84

CPC classification number: H01L41/0805 ,  G01L9/0042 ,  G01L9/0055 ,  H01L29/0669 ,  H01L29/84 ,  H01L41/1132 ,  H01L41/18 ,  H01L41/39

Abstract: Disclosed is a silicon nanowire pressure sensor including a lower substrate with a diaphragm recess in a lower surface thereof, an upper substrate having a first surface attached to an upper surface of the lower substrate, silicon nanowires formed on the first surface of the upper substrate, resistive portions exposed on a second surface of the upper substrate, and a diaphragm region formed by etching a center portion of the second surface of the upper substrate so as to be aligned with the resistive portions, in which the diaphragm recess is larger than the diaphragm region.