公开(公告)号：US12014881B2

公开(公告)日：2024-06-18

申请号：US17709338

申请日：2022-03-30

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Jong Min Yook ,  Je In Yu ,  Jun Chul Kim ,  Dong Su Kim

IPC: H01G4/33 ,  H01G4/005 ,  H01G4/012

CPC classification number: H01G4/33 ,  H01G4/005 ,  H01G4/012

Abstract: The present invention provides a method for manufacturing a high frequency capacitor, including preparing a substrate for formation of the capacitor, forming a dielectric layer at an upper surface of the substrate, forming an upper electrode at an upper surface of the dielectric layer, and removing a portion of a lower surface of the substrate, to expose a lower surface of the dielectric layer, and forming a lower electrode at the lower surface of the dielectric layer. The high frequency capacitor includes a dielectric layer having a uniform surface, a thick upper electrode, and a thick lower electrode and, as such, exhibits high quality factor (Q) even at a high frequency.