公开(公告)号：US20180016403A1

公开(公告)日：2018-01-18

申请号：US15612936

申请日：2017-06-02

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sang Ouk KIM ,  Hyeong Min JIN ,  Keon Jae LEE ,  Seung Hyun LEE ,  Ju Young KIM

IPC: C08J3/28 ,  B05D1/00

CPC classification number: C08J3/28 ,  B05D1/005 ,  C08J2353/00 ,  C08J2365/00 ,  C08J2383/10 ,  G03F7/0002

Abstract: Provided are a method for manufacturing a nano-pattern including: increasing a temperature of a self-assembling material applied on a substrate through light irradiation to form a self-assembly pattern, and a nano-pattern manufactured thereby. More particularly, the present invention relates to a method for manufacturing a nano-pattern capable of implementing various circuit patterns through simple dragging without using a photoresist pattern or chemical pattern in advance, implementing the nano-pattern on a substrate having a three-dimensional structure such as a flexible substrate as well as a flat substrate, and performing a process without a specific environmental restriction. In addition, the present invention relates to a method for manufacturing a nano-pattern capable of forming a large-area self-assembly pattern within a very short time, that is, several to several ten milliseconds (ms) by instantly irradiating high-energy flash light to instantly perform thermal annealing.

公开(公告)号：US20220382117A1

公开(公告)日：2022-12-01

申请号：US17496419

申请日：2021-10-07

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Min Seok JANG ,  Ju Young KIM ,  Juho PARK

IPC: G02F1/21

Abstract: Disclosed are an optical modulation device and a phase modulation method using the same. The optical modulation device includes a reflection plate, an insulating film over the reflection plate, dielectric patterns aligned on the insulating film in a first direction and extended in parallel in a second direction intersecting the first direction, and first and second graphene patterns provided between the dielectric patterns and alternately aligned in the first direction. The dielectric patterns and the first and second graphene patterns fully cover the top of the insulating film. Two dielectric patterns adjacent to each other in the first direction with one of the first graphene patterns interposed therebetween form one dielectric pattern pair. The dielectric pattern pair is provided in plural. The dielectric pattern pairs are isolated from each other in the first direction with one of the second graphene patterns interposed therebetween. A width of each of the first graphene patterns in the first direction is different from a width of each of the second graphene patterns in the first direction.