公开(公告)号：US20180016403A1

公开(公告)日：2018-01-18

申请号：US15612936

申请日：2017-06-02

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sang Ouk KIM ,  Hyeong Min JIN ,  Keon Jae LEE ,  Seung Hyun LEE ,  Ju Young KIM

IPC: C08J3/28 ,  B05D1/00

CPC classification number: C08J3/28 ,  B05D1/005 ,  C08J2353/00 ,  C08J2365/00 ,  C08J2383/10 ,  G03F7/0002

Abstract: Provided are a method for manufacturing a nano-pattern including: increasing a temperature of a self-assembling material applied on a substrate through light irradiation to form a self-assembly pattern, and a nano-pattern manufactured thereby. More particularly, the present invention relates to a method for manufacturing a nano-pattern capable of implementing various circuit patterns through simple dragging without using a photoresist pattern or chemical pattern in advance, implementing the nano-pattern on a substrate having a three-dimensional structure such as a flexible substrate as well as a flat substrate, and performing a process without a specific environmental restriction. In addition, the present invention relates to a method for manufacturing a nano-pattern capable of forming a large-area self-assembly pattern within a very short time, that is, several to several ten milliseconds (ms) by instantly irradiating high-energy flash light to instantly perform thermal annealing.