公开(公告)号：US20160089723A1

公开(公告)日：2016-03-31

申请号：US14923910

申请日：2015-10-27

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hee-Tae JUNG ,  Hwan-Jin JEON ,  Kyoung-Hwan KIM ,  Youn-Kyoung BAEK

IPC: B22F7/04 ,  C23C14/58 ,  C23C14/22

CPC classification number: B22F7/04 ,  B22F1/0018 ,  B22F9/02 ,  B81C1/00031 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C03C17/006 ,  C03C2217/42 ,  C03C2218/34 ,  C23C14/221 ,  C30B23/00 ,  C30B29/02 ,  C30B29/16 ,  C30B29/60 ,  C30B33/08 ,  G03F7/0002 ,  G03F7/0037 ,  Y10T428/24479 ,  Y10T428/24612

Abstract: A method of fabricating nanostructures using macro pre-patterns according to the present invention, which comprises either depositing a target material on a substrate having macro pre-patterns formed thereon, or applying a target material to a substrate and then forming macro pre-patterns on the substrate, and then depositing the target material on the side surface of the macro pre-patterns by an ion bombardment phenomenon occurring during etching, provides a three-dimensional nanostructures with high aspect ratio and uniformity can be fabricated by a simple process at low cost by using the ion bombardment phenomenon occurring during physical ion etching, thereby achieving the high performance of future nano-devices, such as nanosized electronic devices, optical devices, bio devices and energy devices.

Abstract translation: 使用根据本发明的宏预制图来制造纳米结构的方法，其包括将靶材料沉积在具有形成在其上的宏观预制图案的基底上，或将目标材料施加到基底上，然后在 基板，然后通过蚀刻期间发生的离子轰击现象将目标材料沉积在宏观预制图案的侧表面上，提供具有高纵横比和均匀性的三维纳米结构可以通过简单的方法以低成本制造 通过使用在物理离子蚀刻中发生的离子轰击现象，从而实现纳米尺寸的电子器件，光学器件，生物器件和能量器件等未来的纳米器件的高性能。